IXTA160N10T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

160A

JESD-30 Code :

R-PSSO-G2

Packaging :

Tube

Terminal Form :

Gull wing

Base Product Number :

IXTA160

Input Capacitance :

6.6 nF

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

500 mJ

Input Capacitance (Ciss) (Max) @ Vds :

6600pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Drain to Source Resistance :

7 mΩ

Brand :

IXYS

Product Type :

MOSFET

Pbfree Code :

yes

Terminal Position :

Single

Product Category :

MOSFET

RoHS :

Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

42 ns

Drain Current-Max (Abs) (ID) :

160 A

Drain-source On Resistance-Max :

0.007Ohm

Package :

Tube

Factory Lead Time :

28 Weeks

Transistor Element Material :

SILICON

Max Operating Temperature :

175 °C

Rise Time :

61ns

Published :

2006

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Feature :

--

Drain to Source Breakdown Voltage :

100V

Package Shape :

RECTANGULAR

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

7m Ω @ 25A, 10V

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Configuration :

Single

Turn-Off Delay Time :

49 ns

DS Breakdown Voltage-Min :

100 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

430 W

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

430W

Gate Charge (Qg) (Max) @ Vgs :

132nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Polarity :

N-Channel

Element Configuration :

Single

Manufacturer :

IXYS

Product Status :

Active

Number of Channels :

1 Channel

Qualification Status :

Not Qualified

Width :

9.2 mm

Polarity/Channel Type :

N-Channel

Tradename :

HiPerFET

Length :

9.9 mm

Channel Mode :

Enhancement

Power Dissipation-Max :

430W Tc

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

JESD-609 Code :

e3

Maximum Operating Temperature :

+ 175 C

Number of Terminals :

2

Transistor Type :

1 N-Channel

Operating Temperature :

-55°C~175°C TJ

Pin Count :

4

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max (Abs) :

430 W

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Pulsed Drain Current-Max (IDM) :

430A

Mounting Type :

Surface Mount

Series :

TrenchMV™

FET Type :

N-Channel

Min Operating Temperature :

-55 °C

Minimum Operating Temperature :

- 55 C

Drain to Source Voltage (Vdss) :

100V

Power Dissipation (Max) :

430W (Tc)

Height :

4.5 mm

Number of Terminations :

2

Supplier Device Package :

TO-263 (IXTA)

Case Connection :

DRAIN

Rds On Max :

7 mΩ

JEDEC-95 Code :

TO-263AB

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Mounting Style :

SMD/SMT