IXTA160N075T

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Mfr.Part #
IXTA160N075T
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 75V 160A TO263
Stock
33,708
In Stock :
33,708

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain-source On Resistance-Max :
0.006Ohm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
DS Breakdown Voltage-Min :
75 V
Manufacturer :
IXYS Corporation
Pbfree Code :
yes
Mount :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
10V
Published :
2006
FET Feature :
--
Pulsed Drain Current-Max (IDM) :
430A
Terminal Form :
Gull wing
Vgs(th) (Max) @ Id :
4V @ 250µA
Surface Mount :
yes
Continuous Drain Current (ID) :
160A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Element Configuration :
Single
Number of Elements :
1
Input Capacitance (Ciss) (Max) @ Vds :
4950pF @ 25V
Min Operating Temperature :
-55 °C
Number of Terminations :
2
Number of Terminals :
2
Base Product Number :
IXTA160
ECCN Code :
EAR99
Rds On (Max) @ Id, Vgs :
6m Ω @ 25A, 10V
Rds On Max :
6 mΩ
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain to Source Resistance :
6 mΩ
Series :
TrenchMV™
Configuration :
SINGLE WITH BUILT-IN DIODE
Power Dissipation :
360W
Mounting Type :
Surface Mount
Avalanche Energy Rating (Eas) :
750 mJ
RoHS :
Compliant
Supplier Device Package :
TO-263 (IXTA)
Power Dissipation (Max) :
360W (Tc)
Terminal Position :
Single
Rise Time :
64ns
RoHS Status :
RoHS Compliant
Power Dissipation-Max :
360W Tc
Transistor Element Material :
SILICON
Vgs (Max) :
±20V
Transistor Application :
SWITCHING
Max Power Dissipation :
360 W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Operating Temperature :
175 °C
Case Connection :
DRAIN
JEDEC-95 Code :
TO-263AB
JESD-30 Code :
R-PSSO-G2
Qualification Status :
Not Qualified
Fall Time (Typ) :
60 ns
Package Shape :
RECTANGULAR
Operating Temperature :
-55°C~175°C TJ
Terminal Finish :
Matte Tin (Sn)
Pin Count :
4
Current - Continuous Drain (Id) @ 25°C :
160A Tc
Drain to Source Voltage (Vdss) :
75V
Package :
Tube
Input Capacitance :
4.95 nF
Reach Compliance Code :
Compliant
Drain to Source Breakdown Voltage :
75V
Product Status :
Obsolete
JESD-609 Code :
e3
Gate Charge (Qg) (Max) @ Vgs :
112nC @ 10V
Turn-Off Delay Time :
60 ns
Polarity/Channel Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Packaging :
Tube
FET Type :
N-Channel
Datasheets
IXTA160N075T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA160N075T from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, IXTA160N075T pinout, IXTA160N075T datasheet PDF, IXTA160N075T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA160N075T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA160N075T


N-Channel Tube 6m Ω @ 25A, 10V ±20V 4950pF @ 25V 112nC @ 10V 75V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA160N075T Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 750 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4950pF @ 25V.This device conducts a continuous drain current (ID) of 160A, which is the maximum continuous current transistor can conduct.Using VGS=75V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 75V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 60 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 430A.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 6 mΩ, which means the device is not biased.A normal operation of the DS requires keeping the breakdown voltage above 75 V.This transistor requires a drain-source voltage (Vdss) of 75V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTA160N075T Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 160A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 430A.
single MOSFETs transistor is 6 mΩ
a 75V drain to source voltage (Vdss)


IXTA160N075T Applications


There are a lot of IXYS
IXTA160N075T applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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