IXTA15N50L2
- Mfr.Part #
- IXTA15N50L2
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 15A TO263
- Stock
- 15,575
- In Stock :
- 15,575
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSSO-G2
- Base Product Number :
- IXTA15
- Additional Feature :
- AVALANCHE RATED
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 2
- Drain-source On Resistance-Max :
- 0.48Ohm
- Maximum Operating Temperature :
- + 150 C
- JESD-609 Code :
- e3
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Transistor Type :
- 1 N-Channel
- Rds On (Max) @ Id, Vgs :
- 480m Ω @ 7.5A, 10V
- Product Status :
- Active
- Reach Compliance Code :
- not_compliant
- Rds On Max :
- 480 mΩ
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Number of Channels :
- 1 Channel
- RoHS :
- Details
- Tradename :
- Linear L2
- Operating Mode :
- ENHANCEMENT MODE
- Supplier Device Package :
- TO-263 (IXTA)
- Series :
- Linear L2™
- Factory Lead Time :
- 28 Weeks
- Mounting Type :
- Surface Mount
- Min Operating Temperature :
- -55 °C
- Published :
- 2011
- Drain to Source Voltage (Vdss) :
- 500V
- Pulsed Drain Current-Max (IDM) :
- 35A
- Package :
- Tube
- Max Power Dissipation :
- 300 W
- Vgs (Max) :
- ±20V
- DS Breakdown Voltage-Min :
- 500V
- Brand :
- IXYS
- Product Type :
- MOSFET
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Minimum Operating Temperature :
- - 55 C
- Transistor Polarity :
- N-Channel
- Power Dissipation-Max :
- 300W Tc
- Manufacturer :
- IXYS
- Rise Time :
- 73 ns
- Continuous Drain Current (ID) :
- 15A
- Mount :
- Surface Mount
- FET Feature :
- --
- Power Dissipation (Max) :
- 300W (Tc)
- Max Operating Temperature :
- 150 °C
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance :
- 4.08 nF
- Input Capacitance (Ciss) (Max) @ Vds :
- 4080pF @ 25V
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 123nC @ 10V
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Position :
- Single
- Pin Count :
- 3
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Mounting Style :
- SMD/SMT
- FET Type :
- N-Channel
- Packaging :
- Tube
- Datasheets
- IXTA15N50L2
IXTA15N50L2 Documents

N-Channel Tube 480m Ω @ 7.5A, 10V ±20V 4080pF @ 25V 123nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA15N50L2 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 750 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4080pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 15A continuous drain current (ID).Peak drain current is 35A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 500V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTA15N50L2 Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 15A
based on its rated peak drain current 35A.
a 500V drain to source voltage (Vdss)
IXTA15N50L2 Applications
There are a lot of IXYS
IXTA15N50L2 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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