IXTA152N085T7
- Mfr.Part #
- IXTA152N085T7
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- Datasheet
- Download
- Description
- MOSFET N-CH 85V 152A TO263-7
- Stock
- 28,238
- In Stock :
- 28,238
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 50 ns
- Surface Mount :
- yes
- Operating Temperature :
- -55°C~175°C TJ
- FET Type :
- N-Channel
- Manufacturer :
- IXYS Corporation
- Vgs (Max) :
- ±20V
- Additional Feature :
- AVALANCHE RATED
- Series :
- TrenchMV™
- Input Capacitance (Ciss) (Max) @ Vds :
- 5500pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain to Source Breakdown Voltage :
- 85V
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 25A, 10V
- Package :
- Tube
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- FET Feature :
- --
- Published :
- 2006
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 152A
- RoHS Status :
- RoHS Compliant
- Base Product Number :
- IXTA152
- Reach Compliance Code :
- Compliant
- Drain-source On Resistance-Max :
- 0.007Ohm
- ECCN Code :
- EAR99
- Product Status :
- Obsolete
- JESD-609 Code :
- e3
- Terminal Finish :
- Matte Tin (Sn)
- Packaging :
- Tube
- Rise Time :
- 50ns
- Number of Terminals :
- 6
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 114nC @ 10V
- JEDEC-95 Code :
- TO-263
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- DS Breakdown Voltage-Min :
- 85 V
- Power Dissipation (Max) :
- 360W (Tc)
- Terminal Position :
- Single
- Power Dissipation-Max :
- 360W Tc
- Number of Terminations :
- 6
- Power Dissipation :
- 360W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain to Source Voltage (Vdss) :
- 85V
- JESD-30 Code :
- R-PSFM-G6
- Current - Continuous Drain (Id) @ 25°C :
- 152A Tc
- Mounting Type :
- Surface Mount
- Supplier Device Package :
- TO-263-7 (IXTA..7)
- Pulsed Drain Current-Max (IDM) :
- 410A
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Polarity/Channel Type :
- N-Channel
- Pin Count :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package Shape :
- RECTANGULAR
- Package / Case :
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- Fall Time (Typ) :
- 45 ns
- Case Connection :
- DRAIN
- Datasheets
- IXTA152N085T7

N-Channel Tube 7m Ω @ 25A, 10V ±20V 5500pF @ 25V 114nC @ 10V 85V TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IXTA152N085T7 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 750 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5500pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 152A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 85V, and this device has a drainage-to-source breakdown voltage of 85VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 50 ns.Peak drain current is 410A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 85 V.For this transistor to work, a voltage 85V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTA152N085T7 Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 152A
a drain-to-source breakdown voltage of 85V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 410A.
a 85V drain to source voltage (Vdss)
IXTA152N085T7 Applications
There are a lot of IXYS
IXTA152N085T7 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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