IXTA152N085T

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Mfr.Part #
IXTA152N085T
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 85V 152A TO263
Stock
19,289
In Stock :
19,289

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package Shape :
RECTANGULAR
Product Status :
Obsolete
Pulsed Drain Current-Max (IDM) :
410A
Fall Time (Typ) :
45 ns
Operating Mode :
ENHANCEMENT MODE
Drain to Source Breakdown Voltage :
85V
JESD-609 Code :
e3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Finish :
Matte Tin (Sn)
Pbfree Code :
yes
Avalanche Energy Rating (Eas) :
750 mJ
Drain to Source Voltage (Vdss) :
85V
Rds On (Max) @ Id, Vgs :
7m Ω @ 25A, 10V
Pin Count :
4
DS Breakdown Voltage-Min :
85 V
Surface Mount :
yes
Mounting Type :
Surface Mount
Terminal Position :
Single
Reach Compliance Code :
Compliant
Turn-Off Delay Time :
50 ns
Polarity/Channel Type :
N-Channel
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~175°C TJ
Additional Feature :
AVALANCHE RATED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
114nC @ 10V
Supplier Device Package :
TO-263 (IXTA)
Qualification Status :
Not Qualified
Vgs(th) (Max) @ Id :
4V @ 250µA
Terminal Form :
Gull wing
Power Dissipation :
360W
Continuous Drain Current (ID) :
152A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Element Configuration :
Single
Mount :
Surface Mount
Case Connection :
DRAIN
RoHS Status :
RoHS Compliant
Published :
2006
Number of Elements :
1
ECCN Code :
EAR99
FET Feature :
--
Power Dissipation (Max) :
360W (Tc)
Configuration :
SINGLE WITH BUILT-IN DIODE
JESD-30 Code :
R-PSSO-G2
FET Type :
N-Channel
Power Dissipation-Max :
360W Tc
JEDEC-95 Code :
TO-263AB
Number of Terminations :
2
Package :
Tube
Series :
TrenchMV™
Packaging :
Tube
Lead Free :
Lead Free
Number of Terminals :
2
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Element Material :
SILICON
Current - Continuous Drain (Id) @ 25°C :
152A Tc
Base Product Number :
IXTA152
Drain-source On Resistance-Max :
0.007Ohm
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5500pF @ 25V
Manufacturer :
IXYS Corporation
Rise Time :
50ns
Datasheets
IXTA152N085T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA152N085T from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, IXTA152N085T pinout, IXTA152N085T datasheet PDF, IXTA152N085T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA152N085T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA152N085T


N-Channel Tube 7m Ω @ 25A, 10V ±20V 5500pF @ 25V 114nC @ 10V 85V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA152N085T Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 750 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 85V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 85V.As a result of its turn-off delay time, which is 50 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 410A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 85 V, it should remain above the 85 V level.The transistor must receive a 85V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTA152N085T Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 152A
a drain-to-source breakdown voltage of 85V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 410A.
a 85V drain to source voltage (Vdss)


IXTA152N085T Applications


There are a lot of IXYS
IXTA152N085T applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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