IXTA14N60P
- Mfr.Part #
- IXTA14N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 14A TO263
- Stock
- 290
- In Stock :
- 290
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 2
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Transistor Element Material :
- SILICON
- Channel Mode :
- Enhancement
- Minimum Operating Temperature :
- - 55 C
- DS Breakdown Voltage-Min :
- 600 V
- Pbfree Code :
- yes
- JEDEC-95 Code :
- TO-263AB
- Supplier Device Package :
- TO-263 (IXTA)
- Reach Compliance Code :
- not_compliant
- FET Type :
- N-Channel
- Packaging :
- Tube
- Tradename :
- PolarHV
- Continuous Drain Current (ID) :
- 14A
- Rise Time :
- 27ns
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Power Dissipation :
- 300W
- Product Category :
- MOSFET
- Product Status :
- Active
- FET Feature :
- --
- Rds On (Max) @ Id, Vgs :
- 550m Ω @ 7A, 10V
- Terminal Form :
- Gull wing
- Case Connection :
- DRAIN
- Terminal Position :
- Single
- Voltage - Rated DC :
- 600V
- Pulsed Drain Current-Max (IDM) :
- 42A
- Terminal Finish :
- Matte Tin (Sn)
- JESD-609 Code :
- e3
- Type :
- PolarHV Power MOSFET
- Turn-Off Delay Time :
- 70 ns
- Manufacturer :
- IXYS
- Drain to Source Voltage (Vdss) :
- 600V
- Lead Free :
- Lead Free
- Product Type :
- MOSFET
- Number of Channels :
- 1 Channel
- Element Configuration :
- Single
- Drain Current-Max (Abs) (ID) :
- 14 A
- Polarity/Channel Type :
- P-Channel
- RoHS :
- Details
- Length :
- 9.65 mm
- Avalanche Energy Rating (Eas) :
- 900 mJ
- Power Dissipation-Max (Abs) :
- 300 W
- Drain to Source Breakdown Voltage :
- 600V
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- yes
- Package :
- Tube
- Maximum Operating Temperature :
- + 150 C
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Vgs (Max) :
- ±30V
- Series :
- PolarHV™
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Power Dissipation-Max :
- 300W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Height :
- 4.83 mm
- Number of Pins :
- 3
- Number of Terminals :
- 2
- Factory Lead Time :
- 28 Weeks
- Transistor Type :
- 1 N-Channel
- Fall Time (Typ) :
- 26 ns
- Pin Count :
- 4
- Published :
- 2009
- Width :
- 10.41 mm
- JESD-30 Code :
- R-PSSO-G2
- Package Shape :
- RECTANGULAR
- Base Product Number :
- IXTA14
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 25V
- Mounting Type :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.55Ohm
- Current Rating :
- 14A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Brand :
- IXYS
- Power Dissipation (Max) :
- 300W (Tc)
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Additional Feature :
- AVALANCHE RATED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Polarity :
- N-Channel
- Mounting Style :
- SMD/SMT
- Qualification Status :
- Not Qualified
- Configuration :
- Single
- Datasheets
- IXTA14N60P

N-Channel Tube 550m Ω @ 7A, 10V ±30V 2500pF @ 25V 36nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA14N60P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 900 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2500pF @ 25V.This device conducts a continuous drain current (ID) of 14A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 14 A.When the device is turned off, a turn-off delay time of 70 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 42A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 600 V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTA14N60P Features
the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 42A.
a 600V drain to source voltage (Vdss)
IXTA14N60P Applications
There are a lot of IXYS
IXTA14N60P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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