IXTA14N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

--

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

Configuration :

Single

Mounting Type :

Surface Mount

Brand :

IXYS

Maximum Operating Temperature :

+ 150 C

Number of Terminations :

2

JESD-609 Code :

e3

Mounting Style :

SMD/SMT

Number of Pins :

3

Voltage - Rated DC :

600V

Width :

10.41 mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

P-Channel

Reach Compliance Code :

not_compliant

Type :

PolarHV Power MOSFET

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package :

Tube

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

42A

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Number of Terminals :

2

Base Product Number :

IXTA14

Additional Feature :

AVALANCHE RATED

DS Breakdown Voltage-Min :

600 V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Supplier Device Package :

TO-263 (IXTA)

Drain to Source Voltage (Vdss) :

600V

Case Connection :

DRAIN

Product Category :

MOSFET

RoHS :

Details

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2009

Terminal Form :

Gull wing

Rise Time :

27ns

FET Type :

N-Channel

Turn-Off Delay Time :

70 ns

Product Status :

Active

Package Shape :

RECTANGULAR

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 25V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Surface Mount :

yes

Number of Channels :

1 Channel

Drain-source On Resistance-Max :

0.55Ohm

Length :

9.65 mm

Fall Time (Typ) :

26 ns

Continuous Drain Current (ID) :

14A

Transistor Application :

SWITCHING

Pbfree Code :

yes

Vgs (Max) :

±30V

Factory Lead Time :

28 Weeks

Power Dissipation-Max :

300W Tc

Power Dissipation (Max) :

300W (Tc)

JESD-30 Code :

R-PSSO-G2

Current Rating :

14A

Avalanche Energy Rating (Eas) :

900 mJ

Operating Mode :

ENHANCEMENT MODE

Height :

4.83 mm

Power Dissipation-Max (Abs) :

300 W

Transistor Element Material :

SILICON

Series :

PolarHV™

Channel Mode :

Enhancement

Pin Count :

4

Drain Current-Max (Abs) (ID) :

14 A

Qualification Status :

Not Qualified

Tradename :

PolarHV

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

Matte Tin (Sn)

Product Type :

MOSFET

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Manufacturer :

IXYS

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

550m Ω @ 7A, 10V

Minimum Operating Temperature :

- 55 C

Drain to Source Breakdown Voltage :

600V

Transistor Polarity :

N-Channel

Mount :

Surface Mount

Power Dissipation :

300W

JEDEC-95 Code :

TO-263AB

Transistor Type :

1 N-Channel

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single