IXTA14N60P

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Mfr.Part #
IXTA14N60P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 600V 14A TO263
Stock
290
In Stock :
290

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminations :
2
Current - Continuous Drain (Id) @ 25°C :
14A Tc
Transistor Element Material :
SILICON
Channel Mode :
Enhancement
Minimum Operating Temperature :
- 55 C
DS Breakdown Voltage-Min :
600 V
Pbfree Code :
yes
JEDEC-95 Code :
TO-263AB
Supplier Device Package :
TO-263 (IXTA)
Reach Compliance Code :
not_compliant
FET Type :
N-Channel
Packaging :
Tube
Tradename :
PolarHV
Continuous Drain Current (ID) :
14A
Rise Time :
27ns
RoHS Status :
ROHS3 Compliant
Mount :
Surface Mount
Power Dissipation :
300W
Product Category :
MOSFET
Product Status :
Active
FET Feature :
--
Rds On (Max) @ Id, Vgs :
550m Ω @ 7A, 10V
Terminal Form :
Gull wing
Case Connection :
DRAIN
Terminal Position :
Single
Voltage - Rated DC :
600V
Pulsed Drain Current-Max (IDM) :
42A
Terminal Finish :
Matte Tin (Sn)
JESD-609 Code :
e3
Type :
PolarHV Power MOSFET
Turn-Off Delay Time :
70 ns
Manufacturer :
IXYS
Drain to Source Voltage (Vdss) :
600V
Lead Free :
Lead Free
Product Type :
MOSFET
Number of Channels :
1 Channel
Element Configuration :
Single
Drain Current-Max (Abs) (ID) :
14 A
Polarity/Channel Type :
P-Channel
RoHS :
Details
Length :
9.65 mm
Avalanche Energy Rating (Eas) :
900 mJ
Power Dissipation-Max (Abs) :
300 W
Drain to Source Breakdown Voltage :
600V
Operating Temperature :
-55°C~150°C TJ
Surface Mount :
yes
Package :
Tube
Maximum Operating Temperature :
+ 150 C
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Elements :
1
Vgs (Max) :
±30V
Series :
PolarHV™
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation-Max :
300W Tc
Operating Mode :
ENHANCEMENT MODE
Height :
4.83 mm
Number of Pins :
3
Number of Terminals :
2
Factory Lead Time :
28 Weeks
Transistor Type :
1 N-Channel
Fall Time (Typ) :
26 ns
Pin Count :
4
Published :
2009
Width :
10.41 mm
JESD-30 Code :
R-PSSO-G2
Package Shape :
RECTANGULAR
Base Product Number :
IXTA14
Input Capacitance (Ciss) (Max) @ Vds :
2500pF @ 25V
Mounting Type :
Surface Mount
Drain-source On Resistance-Max :
0.55Ohm
Current Rating :
14A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Brand :
IXYS
Power Dissipation (Max) :
300W (Tc)
Gate Charge (Qg) (Max) @ Vgs :
36nC @ 10V
Gate to Source Voltage (Vgs) :
30V
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Application :
SWITCHING
Additional Feature :
AVALANCHE RATED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Polarity :
N-Channel
Mounting Style :
SMD/SMT
Qualification Status :
Not Qualified
Configuration :
Single
Datasheets
IXTA14N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA14N60P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Type:PolarHV Power MOSFET, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Pins:3, Mounting Type:Surface Mount, IXTA14N60P pinout, IXTA14N60P datasheet PDF, IXTA14N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA14N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA14N60P


N-Channel Tube 550m Ω @ 7A, 10V ±30V 2500pF @ 25V 36nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA14N60P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 900 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2500pF @ 25V.This device conducts a continuous drain current (ID) of 14A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 14 A.When the device is turned off, a turn-off delay time of 70 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 42A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 600 V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTA14N60P Features


the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 42A.
a 600V drain to source voltage (Vdss)


IXTA14N60P Applications


There are a lot of IXYS
IXTA14N60P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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