IXTA140P05T
- Mfr.Part #
- IXTA140P05T
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 50V 140A TO263
- Stock
- 3
- In Stock :
- 3
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max (Abs) :
- 298 W
- Number of Pins :
- 3
- Published :
- 2009
- Terminal Position :
- Single
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 140A
- Product Type :
- MOSFET
- Pulsed Drain Current-Max (IDM) :
- 420A
- Qualification :
- -
- Vgs (Max) :
- ±15V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Manufacturer :
- IXYS
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Drain to Source Voltage (Vdss) :
- 50V
- Input Capacitance (Ciss) (Max) @ Vds :
- 13500pF @ 25V
- JESD-609 Code :
- e3
- Drain Current-Max (Abs) (ID) :
- 140 A
- Lead Free :
- Lead Free
- Series :
- TrenchP™
- Supplier Device Package :
- TO-263 (IXTA)
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 70A, 10V
- Power Dissipation-Max :
- 298W Tc
- Polarity/Channel Type :
- P-Channel
- RoHS Status :
- ROHS3 Compliant
- Package Shape :
- RECTANGULAR
- Pbfree Code :
- yes
- FET Type :
- P-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- FET Feature :
- --
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Minimum Operating Temperature :
- - 55 C
- Drain-source On Resistance-Max :
- 0.009Ohm
- Additional Feature :
- AVALANCHE RATED
- Continuous Drain Current Id :
- 140A
- Number of Terminations :
- 2
- Product Status :
- Active
- Brand :
- IXYS
- JEDEC-95 Code :
- TO-263AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation (Max) :
- 298W (Tc)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Mount :
- Surface Mount
- Channel Type :
- P Channel
- ECCN Code :
- EAR99
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- -55°C~150°C TJ
- Product Category :
- MOSFET
- Surface Mount :
- yes
- Package :
- Tube
- Number of Channels :
- 1 Channel
- Factory Lead Time :
- 28 Weeks
- DS Breakdown Voltage-Min :
- 50V
- Number of Terminals :
- 2
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Qualification Status :
- Not Qualified
- Case Connection :
- DRAIN
- Reach Compliance Code :
- not_compliant
- Mounting Style :
- SMD/SMT
- Transistor Polarity :
- P-Channel
- Number of Elements :
- 1
- Channel Mode :
- Enhancement
- Terminal Finish :
- Matte Tin (Sn)
- JESD-30 Code :
- R-PSSO-G2
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 140A Tc
- Maximum Operating Temperature :
- + 150 C
- Power Dissipation :
- 298W
- Gate to Source Voltage (Vgs) :
- 15V
- Packaging :
- Tube
- Base Product Number :
- IXTA140
- Pin Count :
- 4
- Datasheets
- IXTA140P05T

P-Channel Tube 9m Ω @ 70A, 10V ±15V 13500pF @ 25V 200nC @ 10V 50V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA140P05T Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.A device's maximum input capacitance is 13500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 140A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 140 A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 420A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 15V.For normal operation, maintain the DS breakdown voltage above 50V.To operate this transistor, you need to apply a 50V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTA140P05T Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 140A
based on its rated peak drain current 420A.
a 50V drain to source voltage (Vdss)
IXTA140P05T Applications
There are a lot of IXYS
IXTA140P05T applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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