IXTA130N10T7
- Mfr.Part #
- IXTA130N10T7
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 130A TO263
- Stock
- 4,636
- In Stock :
- 4,636
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Single
- DS Breakdown Voltage-Min :
- 100 V
- Number of Channels :
- 1 Channel
- Channel Mode :
- Enhancement
- Surface Mount :
- yes
- Manufacturer :
- IXYS
- Case Connection :
- DRAIN
- Gate to Source Voltage (Vgs) :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 130A Tc
- JEDEC-95 Code :
- TO-263
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 104nC @ 10V
- Continuous Drain Current (ID) :
- 130A
- Product Category :
- MOSFET
- Pulsed Drain Current-Max (IDM) :
- 350A
- Maximum Operating Temperature :
- + 175 C
- Element Configuration :
- Single
- Number of Terminals :
- 6
- Polarity/Channel Type :
- N-Channel
- Number of Terminations :
- 6
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Turn-Off Delay Time :
- 44 ns
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Supplier Device Package :
- TO-263 (IXTA)
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation :
- 360W
- Drain Current-Max (Abs) (ID) :
- 130 A
- Mounting Style :
- SMD/SMT
- Terminal Form :
- Gull wing
- Drain to Source Voltage (Vdss) :
- 100V
- Number of Elements :
- 1
- Transistor Polarity :
- N-Channel
- Factory Lead Time :
- 24 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Additional Feature :
- AVALANCHE RATED, ULTRA-LOW RESISTANCE
- Drain to Source Breakdown Voltage :
- 100V
- Product Status :
- Active
- ECCN Code :
- EAR99
- Minimum Operating Temperature :
- - 55 C
- Operating Temperature :
- -55°C~175°C TJ
- Package Shape :
- RECTANGULAR
- Vgs (Max) :
- ±20V
- Configuration :
- Single
- Length :
- 10.41 mm
- FET Feature :
- --
- Power Dissipation (Max) :
- 360W (Tc)
- Rds On (Max) @ Id, Vgs :
- 9.1m Ω @ 25A, 10V
- Pin Count :
- 3
- Fall Time (Typ) :
- 28 ns
- Published :
- 2008
- Input Capacitance (Ciss) (Max) @ Vds :
- 5080pF @ 25V
- Power Dissipation-Max (Abs) :
- 360 W
- Power Dissipation-Max :
- 360W Tc
- Series :
- TrenchMV™
- JESD-30 Code :
- R-PSSO-G6
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 47ns
- Qualification Status :
- Not Qualified
- Brand :
- IXYS
- Height :
- 4.83 mm
- Product Type :
- MOSFET
- Base Product Number :
- IXTA130
- Package / Case :
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Avalanche Energy Rating (Eas) :
- 400 mJ
- Packaging :
- Tube
- Tradename :
- HiPerFET
- Width :
- 9.65 mm
- Transistor Type :
- 1 N-Channel
- Mount :
- Surface Mount
- Reach Compliance Code :
- Unknown
- JESD-609 Code :
- e3
- Terminal Finish :
- PURE TIN
- Drain-source On Resistance-Max :
- 0.0091Ohm
- Package :
- Tube
- Mounting Type :
- Surface Mount
- Datasheets
- IXTA130N10T7

N-Channel Tube 9.1m Ω @ 25A, 10V ±20V 5080pF @ 25V 104nC @ 10V 100V TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IXTA130N10T7 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 400 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5080pF @ 25V.This device has a continuous drain current (ID) of [130A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.A device's drain current is its maximum continuous current, and this device's drain current is 130 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 44 ns.A maximum pulsed drain current of 350A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100 V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTA130N10T7 Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 130A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 44 ns
based on its rated peak drain current 350A.
a 100V drain to source voltage (Vdss)
IXTA130N10T7 Applications
There are a lot of IXYS
IXTA130N10T7 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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