IXTA130N10T7

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

44 ns

Element Configuration :

Single

Surface Mount :

yes

Width :

9.65 mm

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Power Dissipation (Max) :

360W (Tc)

JEDEC-95 Code :

TO-263

Power Dissipation :

360W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

PURE TIN

Operating Mode :

ENHANCEMENT MODE

FET Feature :

--

Pbfree Code :

yes

Tradename :

HiPerFET

Series :

TrenchMV™

Number of Terminals :

6

Power Dissipation-Max :

360W Tc

Product Status :

Active

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

DS Breakdown Voltage-Min :

100 V

Length :

10.41 mm

Transistor Application :

SWITCHING

Minimum Operating Temperature :

- 55 C

Channel Mode :

Enhancement

Supplier Device Package :

TO-263 (IXTA)

Maximum Operating Temperature :

+ 175 C

Number of Channels :

1 Channel

FET Type :

N-Channel

Transistor Type :

1 N-Channel

Drain to Source Voltage (Vdss) :

100V

Mount :

Surface Mount

Vgs (Max) :

±20V

Product Category :

MOSFET

Mounting Style :

SMD/SMT

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Pin Count :

3

JESD-30 Code :

R-PSSO-G6

Power Dissipation-Max (Abs) :

360 W

Product Type :

MOSFET

Drain to Source Breakdown Voltage :

100V

Base Product Number :

IXTA130

Rds On (Max) @ Id, Vgs :

9.1m Ω @ 25A, 10V

JESD-609 Code :

e3

Published :

2008

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Package Shape :

RECTANGULAR

Configuration :

Single

Drain-source On Resistance-Max :

0.0091Ohm

ECCN Code :

EAR99

Brand :

IXYS

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

130A

Number of Elements :

1

Mounting Type :

Surface Mount

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

5080pF @ 25V

Rise Time :

47ns

Avalanche Energy Rating (Eas) :

400 mJ

Pulsed Drain Current-Max (IDM) :

350A

Height :

4.83 mm

Fall Time (Typ) :

28 ns

Transistor Polarity :

N-Channel

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

Package :

Tube

Factory Lead Time :

24 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Number of Terminations :

6

Drain Current-Max (Abs) (ID) :

130 A

Manufacturer :

IXYS

Gate Charge (Qg) (Max) @ Vgs :

104nC @ 10V

Polarity/Channel Type :

N-Channel