IXTA130N10T7

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Mfr.Part #
IXTA130N10T7
Manufacturer
Littelfuse
Package / Case
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Datasheet
Download
Description
MOSFET N-CH 100V 130A TO263
Stock
4,636
In Stock :
4,636

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Position :
Single
DS Breakdown Voltage-Min :
100 V
Number of Channels :
1 Channel
Channel Mode :
Enhancement
Surface Mount :
yes
Manufacturer :
IXYS
Case Connection :
DRAIN
Gate to Source Voltage (Vgs) :
30V
Current - Continuous Drain (Id) @ 25°C :
130A Tc
JEDEC-95 Code :
TO-263
Pbfree Code :
yes
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
104nC @ 10V
Continuous Drain Current (ID) :
130A
Product Category :
MOSFET
Pulsed Drain Current-Max (IDM) :
350A
Maximum Operating Temperature :
+ 175 C
Element Configuration :
Single
Number of Terminals :
6
Polarity/Channel Type :
N-Channel
Number of Terminations :
6
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Turn-Off Delay Time :
44 ns
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Supplier Device Package :
TO-263 (IXTA)
FET Type :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation :
360W
Drain Current-Max (Abs) (ID) :
130 A
Mounting Style :
SMD/SMT
Terminal Form :
Gull wing
Drain to Source Voltage (Vdss) :
100V
Number of Elements :
1
Transistor Polarity :
N-Channel
Factory Lead Time :
24 Weeks
Operating Mode :
ENHANCEMENT MODE
Additional Feature :
AVALANCHE RATED, ULTRA-LOW RESISTANCE
Drain to Source Breakdown Voltage :
100V
Product Status :
Active
ECCN Code :
EAR99
Minimum Operating Temperature :
- 55 C
Operating Temperature :
-55°C~175°C TJ
Package Shape :
RECTANGULAR
Vgs (Max) :
±20V
Configuration :
Single
Length :
10.41 mm
FET Feature :
--
Power Dissipation (Max) :
360W (Tc)
Rds On (Max) @ Id, Vgs :
9.1m Ω @ 25A, 10V
Pin Count :
3
Fall Time (Typ) :
28 ns
Published :
2008
Input Capacitance (Ciss) (Max) @ Vds :
5080pF @ 25V
Power Dissipation-Max (Abs) :
360 W
Power Dissipation-Max :
360W Tc
Series :
TrenchMV™
JESD-30 Code :
R-PSSO-G6
RoHS Status :
ROHS3 Compliant
Rise Time :
47ns
Qualification Status :
Not Qualified
Brand :
IXYS
Height :
4.83 mm
Product Type :
MOSFET
Base Product Number :
IXTA130
Package / Case :
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Drive Voltage (Max Rds On,Min Rds On) :
10V
Avalanche Energy Rating (Eas) :
400 mJ
Packaging :
Tube
Tradename :
HiPerFET
Width :
9.65 mm
Transistor Type :
1 N-Channel
Mount :
Surface Mount
Reach Compliance Code :
Unknown
JESD-609 Code :
e3
Terminal Finish :
PURE TIN
Drain-source On Resistance-Max :
0.0091Ohm
Package :
Tube
Mounting Type :
Surface Mount
Datasheets
IXTA130N10T7
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA130N10T7 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Terminations:6, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-263-7, D2Pak (6 Leads + Tab), TO-263CB, Mounting Type:Surface Mount, IXTA130N10T7 pinout, IXTA130N10T7 datasheet PDF, IXTA130N10T7 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA130N10T7 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA130N10T7


N-Channel Tube 9.1m Ω @ 25A, 10V ±20V 5080pF @ 25V 104nC @ 10V 100V TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

IXTA130N10T7 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 400 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5080pF @ 25V.This device has a continuous drain current (ID) of [130A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.A device's drain current is its maximum continuous current, and this device's drain current is 130 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 44 ns.A maximum pulsed drain current of 350A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100 V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTA130N10T7 Features


the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 130A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 44 ns
based on its rated peak drain current 350A.
a 100V drain to source voltage (Vdss)


IXTA130N10T7 Applications


There are a lot of IXYS
IXTA130N10T7 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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