IXTA130N10T
- Mfr.Part #
- IXTA130N10T
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 130A TO263
- Stock
- 34,317
- In Stock :
- 34,317
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drain to Source Breakdown Voltage :
- 100V
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Channel Mode :
- Enhancement
- Turn-Off Delay Time :
- 44 ns
- Brand :
- IXYS
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 28 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 104nC @ 10V
- Tradename :
- HiPerFET
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 5080pF @ 25V
- FET Feature :
- --
- Terminal Form :
- Gull wing
- Manufacturer :
- IXYS
- Pulsed Drain Current-Max (IDM) :
- 350A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Pbfree Code :
- yes
- Power Dissipation (Max) :
- 360W (Tc)
- Width :
- 9.2 mm
- Reach Compliance Code :
- Unknown
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Product Type :
- MOSFET
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tube
- Factory Lead Time :
- 8 Weeks
- Series :
- TrenchMV™
- Current - Continuous Drain (Id) @ 25°C :
- 130A Tc
- Transistor Polarity :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Finish :
- PURE TIN
- Vgs (Max) :
- ±30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2008
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Rise Time :
- 47ns
- Supplier Device Package :
- TO-263 (IXTA)
- Number of Terminations :
- 2
- Product Category :
- MOSFET
- Power Dissipation-Max :
- 360W Tc
- Product Status :
- Active
- Number of Elements :
- 1
- Package :
- Tube
- Configuration :
- Single
- Height :
- 4.5 mm
- JESD-30 Code :
- R-PSSO-G2
- Rds On (Max) @ Id, Vgs :
- 9.1m Ω @ 25A, 10V
- Continuous Drain Current (ID) :
- 130A
- Length :
- 9.9 mm
- Operating Temperature :
- -55°C~175°C TJ
- Resistance :
- 9.1MOhm
- Additional Feature :
- AVALANCHE RATED, ULTRA-LOW RESISTANCE
- Drain to Source Voltage (Vdss) :
- 100V
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Power Dissipation :
- 360W
- Transistor Type :
- 1 N-Channel
- Pin Count :
- 4
- Qualification Status :
- Not Qualified
- Base Product Number :
- IXTA130
- Datasheets
- IXTA130N10T

N-Channel Tube 9.1m Ω @ 25A, 10V ±30V 5080pF @ 25V 104nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA130N10T Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5080pF @ 25V.This device conducts a continuous drain current (ID) of 130A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 44 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 350A.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTA130N10T Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 130A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 44 ns
based on its rated peak drain current 350A.
a 100V drain to source voltage (Vdss)
IXTA130N10T Applications
There are a lot of IXYS
IXTA130N10T applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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