IXTA130N10T

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Mfr.Part #
IXTA130N10T
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 100V 130A TO263
Stock
34,317
In Stock :
34,317

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain to Source Breakdown Voltage :
100V
Lead Free :
Lead Free
Mount :
Surface Mount
Channel Mode :
Enhancement
Turn-Off Delay Time :
44 ns
Brand :
IXYS
Transistor Application :
SWITCHING
Fall Time (Typ) :
28 ns
Gate Charge (Qg) (Max) @ Vgs :
104nC @ 10V
Tradename :
HiPerFET
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
5080pF @ 25V
FET Feature :
--
Terminal Form :
Gull wing
Manufacturer :
IXYS
Pulsed Drain Current-Max (IDM) :
350A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Pbfree Code :
yes
Power Dissipation (Max) :
360W (Tc)
Width :
9.2 mm
Reach Compliance Code :
Unknown
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Product Type :
MOSFET
Case Connection :
DRAIN
Avalanche Energy Rating (Eas) :
500 mJ
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Packaging :
Tube
Factory Lead Time :
8 Weeks
Series :
TrenchMV™
Current - Continuous Drain (Id) @ 25°C :
130A Tc
Transistor Polarity :
N-Channel
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Finish :
PURE TIN
Vgs (Max) :
±30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2008
Element Configuration :
Single
Mounting Type :
Surface Mount
Rise Time :
47ns
Supplier Device Package :
TO-263 (IXTA)
Number of Terminations :
2
Product Category :
MOSFET
Power Dissipation-Max :
360W Tc
Product Status :
Active
Number of Elements :
1
Package :
Tube
Configuration :
Single
Height :
4.5 mm
JESD-30 Code :
R-PSSO-G2
Rds On (Max) @ Id, Vgs :
9.1m Ω @ 25A, 10V
Continuous Drain Current (ID) :
130A
Length :
9.9 mm
Operating Temperature :
-55°C~175°C TJ
Resistance :
9.1MOhm
Additional Feature :
AVALANCHE RATED, ULTRA-LOW RESISTANCE
Drain to Source Voltage (Vdss) :
100V
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Operating Mode :
ENHANCEMENT MODE
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JESD-609 Code :
e3
Power Dissipation :
360W
Transistor Type :
1 N-Channel
Pin Count :
4
Qualification Status :
Not Qualified
Base Product Number :
IXTA130
Datasheets
IXTA130N10T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA130N10T from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Channels:1 Channel, Mounting Type:Surface Mount, Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, IXTA130N10T pinout, IXTA130N10T datasheet PDF, IXTA130N10T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA130N10T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA130N10T


N-Channel Tube 9.1m Ω @ 25A, 10V ±30V 5080pF @ 25V 104nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA130N10T Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5080pF @ 25V.This device conducts a continuous drain current (ID) of 130A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 44 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 350A.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTA130N10T Features


the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 130A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 44 ns
based on its rated peak drain current 350A.
a 100V drain to source voltage (Vdss)


IXTA130N10T Applications


There are a lot of IXYS
IXTA130N10T applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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