IXTA12N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

IXYS

JESD-609 Code :

e3

Additional Feature :

AVALANCHE RATED

Number of Terminations :

2

Polarity/Channel Type :

N-Channel

Surface Mount :

yes

Power Dissipation-Max :

200W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

10.41 mm

Channel Mode :

Enhancement

Supplier Device Package :

TO-263 (IXTA)

Minimum Operating Temperature :

- 55 C

Voltage - Rated DC :

500V

Turn-Off Delay Time :

55 ns

Terminal Position :

Single

Number of Terminals :

2

Pbfree Code :

yes

Base Product Number :

IXTA12

Number of Elements :

1

Drain to Source Breakdown Voltage :

500V

Drain Current-Max (Abs) (ID) :

12 A

Lead Free :

Lead Free

Pin Count :

4

Product Status :

Active

Published :

2008

Type :

Polar Power MOSFET

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Current Rating :

12A

Transistor Polarity :

N-Channel

Brand :

IXYS

Terminal Finish :

Matte Tin (Sn)

Product Type :

MOSFET

Reach Compliance Code :

not_compliant

Power Dissipation-Max (Abs) :

200 W

Drain to Source Voltage (Vdss) :

500V

Configuration :

Single

Vgs(th) (Max) @ Id :

5.5V @ 250µA

RoHS :

Details

Product Category :

MOSFET

Height :

4.83 mm

Qualification Status :

Not Qualified

Mounting Style :

SMD/SMT

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1 Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

27ns

Rds On (Max) @ Id, Vgs :

500m Ω @ 6A, 10V

Tradename :

Polar

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

Factory Lead Time :

28 Weeks

Package Shape :

RECTANGULAR

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

30 A

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Power Dissipation (Max) :

200W (Tc)

Case Connection :

DRAIN

Length :

9.65 mm

Input Capacitance (Ciss) (Max) @ Vds :

1830pF @ 25V

Fall Time (Typ) :

20 ns

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

FET Feature :

--

Transistor Application :

SWITCHING

Power Dissipation :

200W

Continuous Drain Current (ID) :

12A

Avalanche Energy Rating (Eas) :

600 mJ

Package :

Tube

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Transistor Type :

1 N-Channel

DS Breakdown Voltage-Min :

500 V

Element Configuration :

Single

Drain-source On Resistance-Max :

0.5Ohm

Current - Continuous Drain (Id) @ 25°C :

12A Tc

JEDEC-95 Code :

TO-263AB

Series :

Polar™

Maximum Operating Temperature :

+ 150 C