IXTA12N50P

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Mfr.Part #
IXTA12N50P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 500V 12A TO263
Stock
24
In Stock :
24

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Voltage - Rated DC :
500V
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 10V
Additional Feature :
AVALANCHE RATED
Pin Count :
4
JESD-30 Code :
R-PSSO-G2
Tradename :
Polar
Terminal Form :
Gull wing
Continuous Drain Current (ID) :
12A
Rise Time :
27ns
Power Dissipation-Max (Abs) :
200 W
RoHS :
Details
DS Breakdown Voltage-Min :
500 V
Turn-Off Delay Time :
55 ns
Mount :
Surface Mount
Type :
Polar Power MOSFET
Drain to Source Breakdown Voltage :
500V
Mounting Type :
Surface Mount
Number of Elements :
1
Pulsed Drain Current-Max (IDM) :
30 A
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Minimum Operating Temperature :
- 55 C
Avalanche Energy Rating (Eas) :
600 mJ
Channel Mode :
Enhancement
Power Dissipation :
200W
Supplier Device Package :
TO-263 (IXTA)
Drain Current-Max (Abs) (ID) :
12 A
FET Type :
N-Channel
Lead Free :
Lead Free
Pbfree Code :
yes
Package Shape :
RECTANGULAR
Configuration :
Single
Power Dissipation (Max) :
200W (Tc)
Factory Lead Time :
28 Weeks
Current Rating :
12A
Series :
Polar™
Power Dissipation-Max :
200W Tc
Polarity/Channel Type :
N-Channel
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Number of Pins :
3
Product Category :
MOSFET
Operating Temperature :
-55°C~150°C TJ
Brand :
IXYS
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Product Status :
Active
Reach Compliance Code :
not_compliant
JESD-609 Code :
e3
Number of Terminations :
2
Height :
4.83 mm
Fall Time (Typ) :
20 ns
Surface Mount :
yes
Gate to Source Voltage (Vgs) :
30V
Vgs (Max) :
±30V
Operating Mode :
ENHANCEMENT MODE
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Type :
1 N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2008
Number of Channels :
1 Channel
JEDEC-95 Code :
TO-263AB
Package :
Tube
Mounting Style :
SMD/SMT
Product Type :
MOSFET
Current - Continuous Drain (Id) @ 25°C :
12A Tc
Transistor Polarity :
N-Channel
Number of Terminals :
2
Input Capacitance (Ciss) (Max) @ Vds :
1830pF @ 25V
Terminal Finish :
Matte Tin (Sn)
Qualification Status :
Not Qualified
Manufacturer :
IXYS
Packaging :
Tube
Transistor Element Material :
SILICON
Width :
10.41 mm
Length :
9.65 mm
Rds On (Max) @ Id, Vgs :
500m Ω @ 6A, 10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain-source On Resistance-Max :
0.5Ohm
FET Feature :
--
Terminal Position :
Single
Base Product Number :
IXTA12
Maximum Operating Temperature :
+ 150 C
Drain to Source Voltage (Vdss) :
500V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Application :
SWITCHING
Element Configuration :
Single
Case Connection :
DRAIN
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA12N50P from Chip IC,where excellence meets affordability. This product stands out with its Type:Polar Power MOSFET, Mounting Type:Surface Mount, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Channels:1 Channel, IXTA12N50P pinout, IXTA12N50P datasheet PDF, IXTA12N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA12N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA12N50P


N-Channel Tube 500m Ω @ 6A, 10V ±30V 1830pF @ 25V 29nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA12N50P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 600 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1830pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 12A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Drain current refers to the maximum continuous current a device can conduct, and it is 12 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 55 ns.Peak drain current is 30 A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 500 V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTA12N50P Features


the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 30 A.
a 500V drain to source voltage (Vdss)


IXTA12N50P Applications


There are a lot of IXYS
IXTA12N50P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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