IXTA120P065T

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Mfr.Part #
IXTA120P065T
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET P-CH 65V 120A TO263
Stock
48,230
In Stock :
48,230

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
4V @ 250µA
Manufacturer :
IXYS
Transistor Polarity :
P-Channel
Input Capacitance (Ciss) (Max) @ Vds :
13200pF @ 25V
Factory Lead Time :
28 Weeks
Supplier Device Package :
TO-263 (IXTA)
Operating Mode :
ENHANCEMENT MODE
Pbfree Code :
yes
Package :
Tube
Element Configuration :
Single
Qualification Status :
Not Qualified
Maximum Operating Temperature :
+ 150 C
Transistor Type :
1 P-Channel
Fall Time (Typ) :
21 ns
Mount :
Surface Mount
Number of Channels :
1 Channel
Rds On (Max) @ Id, Vgs :
10m Ω @ 500mA, 10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation-Max :
298W Tc
Operating Temperature :
-55°C~150°C TJ
Resistance :
10MOhm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Style :
SMD/SMT
Power Dissipation :
298W
Terminal Finish :
PURE TIN
ECCN Code :
EAR99
Packaging :
Tube
Tradename :
TrenchP
Avalanche Energy Rating (Eas) :
1000 mJ
Product Type :
MOSFET
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Application :
SWITCHING
Published :
2010
Base Product Number :
IXTA120
Case Connection :
DRAIN
JESD-609 Code :
e3
Current - Continuous Drain (Id) @ 25°C :
120A Tc
Lead Free :
Lead Free
Product Category :
MOSFET
Gate Charge (Qg) (Max) @ Vgs :
185nC @ 10V
Mounting Type :
Surface Mount
Power Dissipation (Max) :
298W (Tc)
Terminal Form :
Gull wing
Configuration :
Single
Drain Current-Max (Abs) (ID) :
0.12A
Pulsed Drain Current-Max (IDM) :
360A
FET Feature :
--
Rise Time :
28ns
Product Status :
Active
Drive Voltage (Max Rds On,Min Rds On) :
10V
Brand :
IXYS
Pin Count :
4
Channel Mode :
Enhancement
JESD-30 Code :
R-PSSO-G2
Vgs (Max) :
±15V
FET Type :
P-Channel
Drain to Source Breakdown Voltage :
-65V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
15V
Transistor Element Material :
SILICON
Series :
TrenchP™
Drain to Source Voltage (Vdss) :
65V
Continuous Drain Current (ID) :
120A
Additional Feature :
AVALANCHE RATED
RoHS :
Details
Number of Terminations :
2
Minimum Operating Temperature :
- 55 C
Reach Compliance Code :
Unknown
Datasheets
IXTA120P065T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA120P065T from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, Number of Terminations:2, IXTA120P065T pinout, IXTA120P065T datasheet PDF, IXTA120P065T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA120P065T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA120P065T


P-Channel Tube 10m Ω @ 500mA, 10V ±15V 13200pF @ 25V 185nC @ 10V 65V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA120P065T Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 13200pF @ 25V.This device conducts a continuous drain current (ID) of 120A, which is the maximum continuous current transistor can conduct.Using VGS=-65V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -65V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.12A.Pulsed drain current is maximum rated peak drain current 360A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 15V.This transistor requires a drain-source voltage (Vdss) of 65V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTA120P065T Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of -65V voltage
based on its rated peak drain current 360A.
a 65V drain to source voltage (Vdss)


IXTA120P065T Applications


There are a lot of IXYS
IXTA120P065T applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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