IXTA120P065T
- Mfr.Part #
- IXTA120P065T
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 65V 120A TO263
- Stock
- 48,230
- In Stock :
- 48,230
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Manufacturer :
- IXYS
- Transistor Polarity :
- P-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 13200pF @ 25V
- Factory Lead Time :
- 28 Weeks
- Supplier Device Package :
- TO-263 (IXTA)
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Package :
- Tube
- Element Configuration :
- Single
- Qualification Status :
- Not Qualified
- Maximum Operating Temperature :
- + 150 C
- Transistor Type :
- 1 P-Channel
- Fall Time (Typ) :
- 21 ns
- Mount :
- Surface Mount
- Number of Channels :
- 1 Channel
- Rds On (Max) @ Id, Vgs :
- 10m Ω @ 500mA, 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 298W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Resistance :
- 10MOhm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Style :
- SMD/SMT
- Power Dissipation :
- 298W
- Terminal Finish :
- PURE TIN
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Tradename :
- TrenchP
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Product Type :
- MOSFET
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Application :
- SWITCHING
- Published :
- 2010
- Base Product Number :
- IXTA120
- Case Connection :
- DRAIN
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Lead Free :
- Lead Free
- Product Category :
- MOSFET
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Mounting Type :
- Surface Mount
- Power Dissipation (Max) :
- 298W (Tc)
- Terminal Form :
- Gull wing
- Configuration :
- Single
- Drain Current-Max (Abs) (ID) :
- 0.12A
- Pulsed Drain Current-Max (IDM) :
- 360A
- FET Feature :
- --
- Rise Time :
- 28ns
- Product Status :
- Active
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Brand :
- IXYS
- Pin Count :
- 4
- Channel Mode :
- Enhancement
- JESD-30 Code :
- R-PSSO-G2
- Vgs (Max) :
- ±15V
- FET Type :
- P-Channel
- Drain to Source Breakdown Voltage :
- -65V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 15V
- Transistor Element Material :
- SILICON
- Series :
- TrenchP™
- Drain to Source Voltage (Vdss) :
- 65V
- Continuous Drain Current (ID) :
- 120A
- Additional Feature :
- AVALANCHE RATED
- RoHS :
- Details
- Number of Terminations :
- 2
- Minimum Operating Temperature :
- - 55 C
- Reach Compliance Code :
- Unknown
- Datasheets
- IXTA120P065T

P-Channel Tube 10m Ω @ 500mA, 10V ±15V 13200pF @ 25V 185nC @ 10V 65V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA120P065T Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 13200pF @ 25V.This device conducts a continuous drain current (ID) of 120A, which is the maximum continuous current transistor can conduct.Using VGS=-65V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -65V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.12A.Pulsed drain current is maximum rated peak drain current 360A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 15V.This transistor requires a drain-source voltage (Vdss) of 65V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTA120P065T Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of -65V voltage
based on its rated peak drain current 360A.
a 65V drain to source voltage (Vdss)
IXTA120P065T Applications
There are a lot of IXYS
IXTA120P065T applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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