IXTA120N04T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Package :

Tube

Avalanche Energy Rating (Eas) :

400 mJ

Configuration :

Single

Height :

4.83 mm

Length :

10.41 mm

Pin Count :

4

Turn-Off Delay Time :

16 ns

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

120 A

Package Shape :

RECTANGULAR

JESD-609 Code :

e3

FET Feature :

--

Base Product Number :

IXTA120

Transistor Application :

SWITCHING

Polarity/Channel Type :

N-Channel

Continuous Drain Current (ID) :

120A

Number of Terminals :

2

Power Dissipation-Max (Abs) :

200 W

Rds On (Max) @ Id, Vgs :

6.1m Ω @ 25A, 10V

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.0061Ohm

Manufacturer :

IXYS

Drain to Source Voltage (Vdss) :

40V

Mount :

Surface Mount

Fall Time (Typ) :

11 ns

Operating Mode :

ENHANCEMENT MODE

Brand :

IXYS

Power Dissipation :

200W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Product Type :

MOSFET

Transistor Type :

1 N-Channel

ECCN Code :

EAR99

Terminal Position :

Single

Power Dissipation-Max :

200W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Reach Compliance Code :

not_compliant

Terminal Form :

Gull wing

Tradename :

HiPerFET

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Drain to Source Breakdown Voltage :

40V

Case Connection :

DRAIN

Product Category :

MOSFET

Minimum Operating Temperature :

- 55 C

Pbfree Code :

yes

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Additional Feature :

AVALANCHE RATED

Series :

TrenchT2™

DS Breakdown Voltage-Min :

40 V

Supplier Device Package :

TO-263 (IXTA)

Width :

9.65 mm

Number of Elements :

1

Maximum Operating Temperature :

+ 175 C

Input Capacitance (Ciss) (Max) @ Vds :

3240pF @ 25V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

360A

Terminal Finish :

Matte Tin (Sn)

Power Dissipation (Max) :

200W (Tc)

Product Status :

Active

Rise Time :

8ns

Channel Mode :

Enhancement

Transistor Polarity :

N-Channel

Factory Lead Time :

28 Weeks

FET Type :

N-Channel

Published :

2008

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Channels :

1 Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

JEDEC-95 Code :

TO-263AB

Mounting Style :

SMD/SMT

Qualification Status :

Not Qualified