IXTA120N04T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

400 mJ

Polarity/Channel Type :

N-Channel

Height :

4.83 mm

Case Connection :

DRAIN

Turn-Off Delay Time :

16 ns

Width :

9.65 mm

Base Product Number :

IXTA120

Terminal Finish :

Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

20V

Brand :

IXYS

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Reach Compliance Code :

not_compliant

Power Dissipation-Max (Abs) :

200 W

Drain to Source Voltage (Vdss) :

40V

Pulsed Drain Current-Max (IDM) :

360A

Factory Lead Time :

28 Weeks

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Package :

Tube

Maximum Operating Temperature :

+ 175 C

Terminal Position :

Single

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

40 V

Product Category :

MOSFET

Mounting Style :

SMD/SMT

Power Dissipation-Max :

200W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs :

6.1m Ω @ 25A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 250µA

Package Shape :

RECTANGULAR

Surface Mount :

yes

Fall Time (Typ) :

11 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Packaging :

Tube

Power Dissipation (Max) :

200W (Tc)

Mount :

Surface Mount

Tradename :

HiPerFET

Product Type :

MOSFET

Product Status :

Active

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2008

Drain to Source Breakdown Voltage :

40V

Power Dissipation :

200W

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

120A

Transistor Polarity :

N-Channel

Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Feature :

--

Rise Time :

8ns

Length :

10.41 mm

Supplier Device Package :

TO-263 (IXTA)

FET Type :

N-Channel

Transistor Element Material :

SILICON

Pin Count :

4

Number of Terminals :

2

Series :

TrenchT2™

Minimum Operating Temperature :

- 55 C

Drain-source On Resistance-Max :

0.0061Ohm

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

3240pF @ 25V

Pbfree Code :

yes

Element Configuration :

Single

Transistor Type :

1 N-Channel

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Manufacturer :

IXYS

Mounting Type :

Surface Mount

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

120 A

JEDEC-95 Code :

TO-263AB

Channel Mode :

Enhancement

Number of Channels :

1 Channel