IXTA110N055T2
- Mfr.Part #
- IXTA110N055T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 110A TO263
- Stock
- 25,570
- In Stock :
- 25,570
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.0066Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 3060pF @ 25V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- RoHS :
- Details
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Subcategory :
- MOSFETs
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 180W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Channel Mode :
- Enhancement
- Height :
- 4.83 mm
- Power Dissipation :
- 180W
- Continuous Drain Current (ID) :
- 110A
- Product Category :
- MOSFET
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 57nC @ 10V
- Factory Lead Time :
- 28 Weeks
- Manufacturer :
- IXYS
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 6.6m Ω @ 25A, 10V
- Terminal Form :
- Gull wing
- Package :
- Tube
- Length :
- 10.41 mm
- Transistor Polarity :
- N-Channel
- Pin Count :
- 4
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Additional Feature :
- AVALANCHE RATED
- Operating Temperature :
- -55°C~175°C TJ
- Pbfree Code :
- yes
- Pulsed Drain Current-Max (IDM) :
- 300A
- JESD-609 Code :
- e3
- FET Feature :
- --
- Product Type :
- MOSFET
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Voltage (Vdss) :
- 55V
- JESD-30 Code :
- R-PSSO-G2
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 55V
- Reach Compliance Code :
- not_compliant
- Qualification Status :
- Not Qualified
- Width :
- 9.65 mm
- Transistor Type :
- 1 N-Channel
- Power Dissipation (Max) :
- 180W (Tc)
- Element Configuration :
- Single
- Fall Time (Typ) :
- 23 ns
- Avalanche Energy Rating (Eas) :
- 400 mJ
- Number of Elements :
- 1
- Maximum Operating Temperature :
- + 175 C
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Status :
- Active
- Packaging :
- Tube
- Terminal Finish :
- Matte Tin (Sn)
- Minimum Operating Temperature :
- - 55 C
- Rise Time :
- 25ns
- Series :
- TrenchT2™
- Tradename :
- HiPerFET
- Published :
- 2004
- Brand :
- IXYS
- ECCN Code :
- EAR99
- Base Product Number :
- IXTA110
- Number of Terminations :
- 2
- Lead Free :
- Lead Free
- Configuration :
- Single
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN
- Supplier Device Package :
- TO-263 (IXTA)
- Turn-Off Delay Time :
- 40 ns
- Number of Channels :
- 1 Channel
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Style :
- SMD/SMT
- Datasheets
- IXTA110N055T2

N-Channel Tube 6.6m Ω @ 25A, 10V ±20V 3060pF @ 25V 57nC @ 10V 55V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA110N055T2 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 400 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3060pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 55V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 55V.As a result of its turn-off delay time, which is 40 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 300A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 55V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTA110N055T2 Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 300A.
a 55V drain to source voltage (Vdss)
IXTA110N055T2 Applications
There are a lot of IXYS
IXTA110N055T2 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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