IXTA110N055T2

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Mfr.Part #
IXTA110N055T2
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 55V 110A TO263
Stock
25,570
In Stock :
25,570

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain-source On Resistance-Max :
0.0066Ohm
Input Capacitance (Ciss) (Max) @ Vds :
3060pF @ 25V
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RoHS :
Details
Vgs (Max) :
±20V
Transistor Application :
SWITCHING
Subcategory :
MOSFETs
Mount :
Surface Mount
Power Dissipation-Max :
180W Tc
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Channel Mode :
Enhancement
Height :
4.83 mm
Power Dissipation :
180W
Continuous Drain Current (ID) :
110A
Product Category :
MOSFET
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
57nC @ 10V
Factory Lead Time :
28 Weeks
Manufacturer :
IXYS
Gate to Source Voltage (Vgs) :
20V
Rds On (Max) @ Id, Vgs :
6.6m Ω @ 25A, 10V
Terminal Form :
Gull wing
Package :
Tube
Length :
10.41 mm
Transistor Polarity :
N-Channel
Pin Count :
4
Drive Voltage (Max Rds On,Min Rds On) :
10V
Additional Feature :
AVALANCHE RATED
Operating Temperature :
-55°C~175°C TJ
Pbfree Code :
yes
Pulsed Drain Current-Max (IDM) :
300A
JESD-609 Code :
e3
FET Feature :
--
Product Type :
MOSFET
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
4V @ 250µA
Drain to Source Voltage (Vdss) :
55V
JESD-30 Code :
R-PSSO-G2
FET Type :
N-Channel
Drain to Source Breakdown Voltage :
55V
Reach Compliance Code :
not_compliant
Qualification Status :
Not Qualified
Width :
9.65 mm
Transistor Type :
1 N-Channel
Power Dissipation (Max) :
180W (Tc)
Element Configuration :
Single
Fall Time (Typ) :
23 ns
Avalanche Energy Rating (Eas) :
400 mJ
Number of Elements :
1
Maximum Operating Temperature :
+ 175 C
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Status :
Active
Packaging :
Tube
Terminal Finish :
Matte Tin (Sn)
Minimum Operating Temperature :
- 55 C
Rise Time :
25ns
Series :
TrenchT2™
Tradename :
HiPerFET
Published :
2004
Brand :
IXYS
ECCN Code :
EAR99
Base Product Number :
IXTA110
Number of Terminations :
2
Lead Free :
Lead Free
Configuration :
Single
Mounting Type :
Surface Mount
Case Connection :
DRAIN
Supplier Device Package :
TO-263 (IXTA)
Turn-Off Delay Time :
40 ns
Number of Channels :
1 Channel
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Style :
SMD/SMT
Datasheets
IXTA110N055T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA110N055T2 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~175°C TJ, Number of Terminations:2, Mounting Type:Surface Mount, Number of Channels:1 Channel, IXTA110N055T2 pinout, IXTA110N055T2 datasheet PDF, IXTA110N055T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA110N055T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA110N055T2


N-Channel Tube 6.6m Ω @ 25A, 10V ±20V 3060pF @ 25V 57nC @ 10V 55V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA110N055T2 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 400 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3060pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 55V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 55V.As a result of its turn-off delay time, which is 40 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 300A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 55V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTA110N055T2 Features


the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 300A.
a 55V drain to source voltage (Vdss)


IXTA110N055T2 Applications


There are a lot of IXYS
IXTA110N055T2 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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