IXTA110N055P
- Mfr.Part #
- IXTA110N055P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 110A TO263
- Stock
- 7,116
- In Stock :
- 7,116
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Qualification Status :
- Not Qualified
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- DS Breakdown Voltage-Min :
- 55 V
- Factory Lead Time :
- 8 Weeks
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 27 ns
- Width :
- 9.2mm
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Additional Feature :
- AVALANCHE RATED
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Number of Terminals :
- 2
- Number of Pins :
- 3
- Surface Mount :
- yes
- Recovery Time :
- 80 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation-Max :
- 390W Tc
- FET Feature :
- --
- Rds On (Max) @ Id, Vgs :
- 13.5m Ω @ 500mA, 10V
- Pin Count :
- 4
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Power Dissipation :
- 390W
- Fall Time (Typ) :
- 45 ns
- Transistor Element Material :
- SILICON
- Rise Time :
- 53ns
- Drain to Source Voltage (Vdss) :
- 55V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 55V
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Length :
- 9.9mm
- Mounting Type :
- Surface Mount
- JEDEC-95 Code :
- TO-263AB
- Element Configuration :
- Single
- Product Status :
- Active
- Packaging :
- Tube
- Turn-Off Delay Time :
- 66 ns
- Published :
- 2006
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain-source On Resistance-Max :
- 0.0135 Ω
- REACH SVHC :
- No SVHC
- Pulsed Drain Current-Max (IDM) :
- 250A
- Supplier Device Package :
- TO-263 (IXTA)
- Reach Compliance Code :
- Compliant
- Terminal Form :
- Gull wing
- Number of Terminations :
- 2
- Power Dissipation (Max) :
- 390W (Tc)
- Polarity/Channel Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~175°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 76nC @ 10V
- Terminal Position :
- Single
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Case Connection :
- DRAIN
- Height :
- 4.5mm
- Package Shape :
- RECTANGULAR
- Manufacturer :
- IXYS Corporation
- Series :
- PolarHT™
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2210pF @ 25V
- Package :
- Tube
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Base Product Number :
- IXTA110
- Continuous Drain Current (ID) :
- 110A
- Terminal Finish :
- PURE TIN
- Datasheets
- IXTA110N055P

N-Channel Tube 13.5m Ω @ 500mA, 10V ±20V 2210pF @ 25V 76nC @ 10V 55V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA110N055P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2210pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 110A amps.In this device, the drain-source breakdown voltage is 55V and VGS=55V, so the drain-source breakdown voltage is 55V in this case.It is [66 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 250A.A turn-on delay time of 27 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 55 V to maintain normal operation.To operate this transistor, you will need a 55V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTA110N055P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 66 ns
based on its rated peak drain current 250A.
a 55V drain to source voltage (Vdss)
IXTA110N055P Applications
There are a lot of IXYS
IXTA110N055P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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