IXTA10P15T
- Mfr.Part #
- IXTA10P15T
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 150V 10A TO263
- Stock
- 18,536
- In Stock :
- 18,536
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2012
- Drain to Source Voltage (Vdss) :
- 150V
- Terminal Finish :
- Matte Tin (Sn)
- JESD-30 Code :
- R-PSSO-G2
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Reach Compliance Code :
- not_compliant
- DS Breakdown Voltage-Min :
- 150V
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Base Product Number :
- IXTA10
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Rds On (Max) @ Id, Vgs :
- 350m Ω @ 5A, 10V
- Number of Terminations :
- 2
- Mounting Type :
- Surface Mount
- Rise Time :
- 16 ns
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Product Status :
- Active
- Surface Mount :
- yes
- FET Feature :
- -
- Product Type :
- MOSFET
- Vgs (Max) :
- ±15V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Drain-source On Resistance-Max :
- 0.35Ohm
- Pulsed Drain Current-Max (IDM) :
- 30A
- Qualification Status :
- Not Qualified
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Supplier Device Package :
- TO-263 (D2Pak)
- Transistor Polarity :
- P-Channel
- Mounting Style :
- SMD/SMT
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Power Dissipation-Max :
- 83W Ta
- Number of Channels :
- 1 Channel
- FET Type :
- P-Channel
- Minimum Operating Temperature :
- - 55 C
- Case Connection :
- DRAIN
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation (Max) :
- 83W (Ta)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2210pF @ 25V
- RoHS :
- Details
- Transistor Type :
- 1 P-Channel
- Maximum Operating Temperature :
- + 150 C
- Channel Mode :
- Enhancement
- Series :
- TrenchP™
- Package :
- Tube
- Terminal Position :
- Single
- Packaging :
- Tube
- Product Category :
- MOSFET
- JESD-609 Code :
- e3
- Manufacturer :
- IXYS
- Factory Lead Time :
- 28 Weeks
- Terminal Form :
- Gull wing
- Drain Current-Max (Abs) (ID) :
- 10A
- Brand :
- IXYS
- Datasheets
- IXTA10P15T

P-Channel Tube 350m Ω @ 5A, 10V ±15V 2210pF @ 25V 36nC @ 10V 150V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA10P15T Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 200 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2210pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 10A.There is a peak drain current of 30A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 150V, it should remain above the 150V level.The transistor must receive a 150V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTA10P15T Features
the avalanche energy rating (Eas) is 200 mJ
based on its rated peak drain current 30A.
a 150V drain to source voltage (Vdss)
IXTA10P15T Applications
There are a lot of IXYS
IXTA10P15T applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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