IXTA10N60P
- Mfr.Part #
- IXTA10N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 10A TO263
- Stock
- 18,063
- In Stock :
- 18,063
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Single
- Product Status :
- Active
- Turn-Off Delay Time :
- 65 ns
- Published :
- 2006
- Pin Count :
- 4
- Transistor Type :
- 1 N-Channel
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Maximum Operating Temperature :
- + 150 C
- Supplier Device Package :
- TO-263 (IXTA)
- Power Dissipation :
- 200W
- Drain Current-Max (Abs) (ID) :
- 10 A
- Package Shape :
- RECTANGULAR
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Case Connection :
- DRAIN
- Surface Mount :
- yes
- Number of Channels :
- 1 Channel
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Pbfree Code :
- yes
- JEDEC-95 Code :
- TO-263AB
- Configuration :
- Single
- Base Product Number :
- IXTA10
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Height :
- 4.83 mm
- Power Dissipation-Max (Abs) :
- 200 W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Breakdown Voltage :
- 600V
- Terminal Finish :
- Matte Tin (Sn)
- Product Type :
- MOSFET
- Width :
- 9.65 mm
- JESD-609 Code :
- e3
- DS Breakdown Voltage-Min :
- 600 V
- Pulsed Drain Current-Max (IDM) :
- 30A
- Length :
- 10.41 mm
- Additional Feature :
- AVALANCHE RATED
- Fall Time (Typ) :
- 21 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.74Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- not_compliant
- Number of Terminals :
- 2
- Transistor Polarity :
- N-Channel
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- R-PSSO-G2
- Rds On (Max) @ Id, Vgs :
- 740m Ω @ 5A, 10V
- Polarity/Channel Type :
- N-Channel
- Terminal Form :
- Gull wing
- Number of Terminations :
- 2
- Mounting Style :
- SMD/SMT
- Channel Mode :
- Enhancement
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 600V
- Mounting Type :
- Surface Mount
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- RoHS Status :
- ROHS3 Compliant
- FET Feature :
- --
- Product Category :
- MOSFET
- Package :
- Tube
- Power Dissipation (Max) :
- 200W (Tc)
- Series :
- Polar™
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Rise Time :
- 27ns
- Lead Free :
- Lead Free
- Current Rating :
- 10A
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Continuous Drain Current (ID) :
- 10A
- Vgs (Max) :
- ±30V
- Gate to Source Voltage (Vgs) :
- 30V
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 1610pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- Power Dissipation-Max :
- 200W Tc
- Minimum Operating Temperature :
- - 55 C
- Manufacturer :
- IXYS
- Voltage - Rated DC :
- 600V
- Brand :
- IXYS
- Mount :
- Surface Mount
- Datasheets
- IXTA10N60P

N-Channel Tube 740m Ω @ 5A, 10V ±30V 1610pF @ 25V 32nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA10N60P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1610pF @ 25V.This device has a continuous drain current (ID) of [10A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.A device's drain current is its maximum continuous current, and this device's drain current is 10 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 65 ns.A maximum pulsed drain current of 30A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600 V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTA10N60P Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 30A.
a 600V drain to source voltage (Vdss)
IXTA10N60P Applications
There are a lot of IXYS
IXTA10N60P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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