IXTA10N60P

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Mfr.Part #
IXTA10N60P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 600V 10A TO263
Stock
18,063
In Stock :
18,063

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
Single
Product Status :
Active
Turn-Off Delay Time :
65 ns
Published :
2006
Pin Count :
4
Transistor Type :
1 N-Channel
Transistor Element Material :
SILICON
Number of Elements :
1
Maximum Operating Temperature :
+ 150 C
Supplier Device Package :
TO-263 (IXTA)
Power Dissipation :
200W
Drain Current-Max (Abs) (ID) :
10 A
Package Shape :
RECTANGULAR
Current - Continuous Drain (Id) @ 25°C :
10A Tc
Case Connection :
DRAIN
Surface Mount :
yes
Number of Channels :
1 Channel
Avalanche Energy Rating (Eas) :
500 mJ
Pbfree Code :
yes
JEDEC-95 Code :
TO-263AB
Configuration :
Single
Base Product Number :
IXTA10
Element Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Height :
4.83 mm
Power Dissipation-Max (Abs) :
200 W
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Breakdown Voltage :
600V
Terminal Finish :
Matte Tin (Sn)
Product Type :
MOSFET
Width :
9.65 mm
JESD-609 Code :
e3
DS Breakdown Voltage-Min :
600 V
Pulsed Drain Current-Max (IDM) :
30A
Length :
10.41 mm
Additional Feature :
AVALANCHE RATED
Fall Time (Typ) :
21 ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain-source On Resistance-Max :
0.74Ohm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Reach Compliance Code :
not_compliant
Number of Terminals :
2
Transistor Polarity :
N-Channel
Qualification Status :
Not Qualified
JESD-30 Code :
R-PSSO-G2
Rds On (Max) @ Id, Vgs :
740m Ω @ 5A, 10V
Polarity/Channel Type :
N-Channel
Terminal Form :
Gull wing
Number of Terminations :
2
Mounting Style :
SMD/SMT
Channel Mode :
Enhancement
FET Type :
N-Channel
Drain to Source Voltage (Vdss) :
600V
Mounting Type :
Surface Mount
FET Technology :
METAL-OXIDE SEMICONDUCTOR
RoHS Status :
ROHS3 Compliant
FET Feature :
--
Product Category :
MOSFET
Package :
Tube
Power Dissipation (Max) :
200W (Tc)
Series :
Polar™
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Rise Time :
27ns
Lead Free :
Lead Free
Current Rating :
10A
Operating Temperature :
-55°C~150°C TJ
Transistor Application :
SWITCHING
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Continuous Drain Current (ID) :
10A
Vgs (Max) :
±30V
Gate to Source Voltage (Vgs) :
30V
Packaging :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
1610pF @ 25V
Gate Charge (Qg) (Max) @ Vgs :
32nC @ 10V
Power Dissipation-Max :
200W Tc
Minimum Operating Temperature :
- 55 C
Manufacturer :
IXYS
Voltage - Rated DC :
600V
Brand :
IXYS
Mount :
Surface Mount
Datasheets
IXTA10N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA10N60P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Terminations:2, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, IXTA10N60P pinout, IXTA10N60P datasheet PDF, IXTA10N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA10N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA10N60P


N-Channel Tube 740m Ω @ 5A, 10V ±30V 1610pF @ 25V 32nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA10N60P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1610pF @ 25V.This device has a continuous drain current (ID) of [10A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.A device's drain current is its maximum continuous current, and this device's drain current is 10 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 65 ns.A maximum pulsed drain current of 30A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600 V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTA10N60P Features


the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 30A.
a 600V drain to source voltage (Vdss)


IXTA10N60P Applications


There are a lot of IXYS
IXTA10N60P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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