IXTA100N04T2
- Mfr.Part #
- IXTA100N04T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 100A TO263
- Stock
- 26,077
- In Stock :
- 26,077
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- not_compliant
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Product Type :
- MOSFET
- Drain-source On Resistance-Max :
- 0.007Ohm
- Tradename :
- HiPerFET
- Supplier Device Package :
- TO-263 (IXTA)
- Power Dissipation :
- 150W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Maximum Operating Temperature :
- + 175 C
- Configuration :
- Single
- Pin Count :
- 4
- Base Product Number :
- IXTA100
- Fall Time (Typ) :
- 6.4 ns
- Power Dissipation (Max) :
- 150W (Tc)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 15.8 ns
- FET Type :
- N-Channel
- FET Feature :
- --
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- JESD-30 Code :
- R-PSSO-G2
- Mounting Style :
- SMD/SMT
- Height :
- 4.83 mm
- Transistor Type :
- 1 N-Channel
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 300A
- Terminal Form :
- Gull wing
- Qualification Status :
- Not Qualified
- Manufacturer :
- IXYS
- Gate Charge (Qg) (Max) @ Vgs :
- 25.5nC @ 10V
- Number of Terminations :
- 2
- Minimum Operating Temperature :
- - 55 C
- Terminal Finish :
- Matte Tin (Sn)
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~175°C TJ
- Pbfree Code :
- yes
- Product Category :
- MOSFET
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Channels :
- 1 Channel
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Published :
- 2008
- Channel Mode :
- Enhancement
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- Brand :
- IXYS
- Rise Time :
- 5.2ns
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 25A, 10V
- Continuous Drain Current (ID) :
- 100A
- Length :
- 10.41 mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 40V
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 150W Tc
- Transistor Application :
- SWITCHING
- Series :
- TrenchT2™
- Factory Lead Time :
- 28 Weeks
- Additional Feature :
- AVALANCHE RATED
- Transistor Polarity :
- N-Channel
- Package :
- Tube
- Width :
- 9.65 mm
- Drain to Source Breakdown Voltage :
- 40V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2690pF @ 25V
- Element Configuration :
- Single
- Product Status :
- Active
- Datasheets
- IXTA100N04T2

N-Channel Tube 7m Ω @ 25A, 10V ±20V 2690pF @ 25V 25.5nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA100N04T2 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 300 mJ.A device's maximal input capacitance is 2690pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 100A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 15.8 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 300A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTA100N04T2 Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 15.8 ns
based on its rated peak drain current 300A.
a 40V drain to source voltage (Vdss)
IXTA100N04T2 Applications
There are a lot of IXYS
IXTA100N04T2 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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