IXTA100N04T2

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Mfr.Part #
IXTA100N04T2
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 40V 100A TO263
Stock
26,077
In Stock :
26,077

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Surface Mount
FET Feature :
--
Tradename :
HiPerFET
Minimum Operating Temperature :
- 55 C
Drive Voltage (Max Rds On,Min Rds On) :
10V
Manufacturer :
IXYS
Pbfree Code :
yes
Turn-Off Delay Time :
15.8 ns
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
ECCN Code :
EAR99
Transistor Polarity :
N-Channel
Vgs (Max) :
±20V
Power Dissipation :
150W
Transistor Application :
SWITCHING
Mounting Style :
SMD/SMT
FET Type :
N-Channel
Brand :
IXYS
Input Capacitance (Ciss) (Max) @ Vds :
2690pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Rds On (Max) @ Id, Vgs :
7m Ω @ 25A, 10V
Pulsed Drain Current-Max (IDM) :
300A
Product Type :
MOSFET
Channel Mode :
Enhancement
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Series :
TrenchT2™
Rise Time :
5.2ns
Configuration :
Single
Gate to Source Voltage (Vgs) :
20V
Continuous Drain Current (ID) :
100A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-609 Code :
e3
Published :
2008
Operating Mode :
ENHANCEMENT MODE
Terminal Finish :
Matte Tin (Sn)
Terminal Form :
Gull wing
Additional Feature :
AVALANCHE RATED
Power Dissipation-Max :
150W Tc
Factory Lead Time :
28 Weeks
Number of Elements :
1
Drain to Source Breakdown Voltage :
40V
Number of Terminations :
2
Drain-source On Resistance-Max :
0.007Ohm
Operating Temperature :
-55°C~175°C TJ
Width :
9.65 mm
Pin Count :
4
JESD-30 Code :
R-PSSO-G2
Packaging :
Tube
Gate Charge (Qg) (Max) @ Vgs :
25.5nC @ 10V
Qualification Status :
Not Qualified
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
1 N-Channel
Fall Time (Typ) :
6.4 ns
Mount :
Surface Mount
Reach Compliance Code :
not_compliant
Height :
4.83 mm
Number of Channels :
1 Channel
Base Product Number :
IXTA100
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Supplier Device Package :
TO-263 (IXTA)
Length :
10.41 mm
Power Dissipation (Max) :
150W (Tc)
Avalanche Energy Rating (Eas) :
300 mJ
Product Status :
Active
Vgs(th) (Max) @ Id :
4V @ 250µA
Maximum Operating Temperature :
+ 175 C
Product Category :
MOSFET
Drain to Source Voltage (Vdss) :
40V
Case Connection :
DRAIN
Package :
Tube
Datasheets
IXTA100N04T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA100N04T2 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, Number of Channels:1 Channel, IXTA100N04T2 pinout, IXTA100N04T2 datasheet PDF, IXTA100N04T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA100N04T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA100N04T2


N-Channel Tube 7m Ω @ 25A, 10V ±20V 2690pF @ 25V 25.5nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA100N04T2 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 300 mJ.A device's maximal input capacitance is 2690pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 100A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 15.8 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 300A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTA100N04T2 Features


the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 15.8 ns
based on its rated peak drain current 300A.
a 40V drain to source voltage (Vdss)


IXTA100N04T2 Applications


There are a lot of IXYS
IXTA100N04T2 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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