IXTA100N04T2

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Mfr.Part #
IXTA100N04T2
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 40V 100A TO263
Stock
26,077
In Stock :
26,077

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Reach Compliance Code :
not_compliant
Mounting Type :
Surface Mount
Vgs(th) (Max) @ Id :
4V @ 250µA
Product Type :
MOSFET
Drain-source On Resistance-Max :
0.007Ohm
Tradename :
HiPerFET
Supplier Device Package :
TO-263 (IXTA)
Power Dissipation :
150W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Maximum Operating Temperature :
+ 175 C
Configuration :
Single
Pin Count :
4
Base Product Number :
IXTA100
Fall Time (Typ) :
6.4 ns
Power Dissipation (Max) :
150W (Tc)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Turn-Off Delay Time :
15.8 ns
FET Type :
N-Channel
FET Feature :
--
Current - Continuous Drain (Id) @ 25°C :
100A Tc
JESD-30 Code :
R-PSSO-G2
Mounting Style :
SMD/SMT
Height :
4.83 mm
Transistor Type :
1 N-Channel
RoHS Status :
ROHS3 Compliant
Packaging :
Tube
Pulsed Drain Current-Max (IDM) :
300A
Terminal Form :
Gull wing
Qualification Status :
Not Qualified
Manufacturer :
IXYS
Gate Charge (Qg) (Max) @ Vgs :
25.5nC @ 10V
Number of Terminations :
2
Minimum Operating Temperature :
- 55 C
Terminal Finish :
Matte Tin (Sn)
JESD-609 Code :
e3
Mount :
Surface Mount
Operating Temperature :
-55°C~175°C TJ
Pbfree Code :
yes
Product Category :
MOSFET
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Channels :
1 Channel
Transistor Element Material :
SILICON
ECCN Code :
EAR99
Published :
2008
Channel Mode :
Enhancement
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Elements :
1
Case Connection :
DRAIN
Operating Mode :
ENHANCEMENT MODE
Brand :
IXYS
Rise Time :
5.2ns
Avalanche Energy Rating (Eas) :
300 mJ
Gate to Source Voltage (Vgs) :
20V
Rds On (Max) @ Id, Vgs :
7m Ω @ 25A, 10V
Continuous Drain Current (ID) :
100A
Length :
10.41 mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Voltage (Vdss) :
40V
Vgs (Max) :
±20V
Power Dissipation-Max :
150W Tc
Transistor Application :
SWITCHING
Series :
TrenchT2™
Factory Lead Time :
28 Weeks
Additional Feature :
AVALANCHE RATED
Transistor Polarity :
N-Channel
Package :
Tube
Width :
9.65 mm
Drain to Source Breakdown Voltage :
40V
Input Capacitance (Ciss) (Max) @ Vds :
2690pF @ 25V
Element Configuration :
Single
Product Status :
Active
Datasheets
IXTA100N04T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA100N04T2 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Channels:1 Channel, IXTA100N04T2 pinout, IXTA100N04T2 datasheet PDF, IXTA100N04T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA100N04T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA100N04T2


N-Channel Tube 7m Ω @ 25A, 10V ±20V 2690pF @ 25V 25.5nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA100N04T2 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 300 mJ.A device's maximal input capacitance is 2690pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 100A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 15.8 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 300A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTA100N04T2 Features


the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 15.8 ns
based on its rated peak drain current 300A.
a 40V drain to source voltage (Vdss)


IXTA100N04T2 Applications


There are a lot of IXYS
IXTA100N04T2 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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