IXFR90N30
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- Mfr.Part #
- IXFR90N30
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS247™
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 75A ISOPLUS247
- Stock
- 24,950
- In Stock ：
- 24,950
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Supplier Device Package :
- ISOPLUS247™
- Turn-Off Delay Time :
- 100 ns
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 20V
- Type :
- HiPerFET Power MOSFET
- Case Connection :
- Isolated
- Gate Charge (Qg) (Max) @ Vgs :
- 360nC @ 10V
- Configuration :
- Single
- Package :
- Tube
- Pin Count :
- 3
- RoHS Status :
- RoHS Compliant
- Maximum Operating Temperature :
- + 150 C
- Manufacturer :
- IXYS
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Base Product Number :
- IXFR90
- Number of Channels :
- 1 Channel
- Number of Elements :
- 1
- Number of Pins :
- 3
- Minimum Operating Temperature :
- - 55 C
- Additional Feature :
- AVALANCHE RATED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Status :
- Active
- Drain to Source Breakdown Voltage :
- 300V
- Fall Time (Typ) :
- 40 ns
- Published :
- 2000
- Tradename :
- HyperFET
- Power Dissipation (Max) :
- 417W (Tc)
- Mount :
- Through Hole
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 10000pF @ 25V
- Transistor Element Material :
- SILICON
- Channel Mode :
- Enhancement
- Number of Terminations :
- 3
- Package / Case :
- ISOPLUS247™
- Power Dissipation :
- 400W
- Transistor Type :
- 1 N-Channel
- RoHS :
- Details
- Length :
- 16.13 mm
- Lead Free :
- Lead Free
- Brand :
- IXYS
- Product Type :
- MOSFET
- Pbfree Code :
- yes
- Width :
- 5.21 mm
- Rise Time :
- 55ns
- FET Feature :
- --
- Series :
- HiPerFET™
- FET Type :
- N-Channel
- Factory Lead Time :
- 8 Weeks
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Polarity :
- N-Channel
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 75A
- Mounting Style :
- Through Hole
- Packaging :
- Tube
- Radiation Hardening :
- No
- Drain to Source Voltage (Vdss) :
- 300V
- Height :
- 21.34 mm
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Rds On (Max) @ Id, Vgs :
- 33m Ω @ 45A, 10V
- Power Dissipation-Max :
- 417W Tc
- Product Category :
- MOSFET
- Datasheets
- IXFR90N30
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N-Channel Tube 33m Ω @ 45A, 10V ±20V 10000pF @ 25V 360nC @ 10V 300V ISOPLUS247™
IXFR90N30 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 10000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 300V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 300V.As a result of its turn-off delay time, which is 100 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 300V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFR90N30 Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 100 ns
a 300V drain to source voltage (Vdss)
IXFR90N30 Applications
There are a lot of IXYS
IXFR90N30 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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