IXFR80N50Q3
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- Mfr.Part #
- IXFR80N50Q3
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 50A ISOPLUS247
- Stock
- 13,616
- In Stock ：
- 13,616
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 43 ns
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Length :
- 16.13mm
- Transistor Polarity :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 30V
- Package :
- Tube
- Product Category :
- MOSFET
- Vgs(th) (Max) @ Id :
- 6.5V @ 8mA
- Vgs (Max) :
- ±30V
- Width :
- 5.21mm
- Minimum Operating Temperature :
- - 55 C
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-247-3
- Mounting Style :
- Through Hole
- Drain to Source Breakdown Voltage :
- 500V
- Mounting Type :
- Through Hole
- Tradename :
- HiPerFET
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Rise Time :
- 250ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- HiPerFET™
- Transistor Type :
- 1 N-Channel
- Maximum Operating Temperature :
- + 150 C
- Power Dissipation (Max) :
- 570W (Tc)
- Mount :
- Through Hole
- Pin Count :
- 3
- Supplier Device Package :
- ISOPLUS247™
- Pulsed Drain Current-Max (IDM) :
- 240A
- Number of Pins :
- 247
- Rds On (Max) @ Id, Vgs :
- 72m Ω @ 40A, 10V
- JESD-30 Code :
- R-PSIP-T3
- Product Status :
- Active
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Factory Lead Time :
- 30 Weeks
- Resistance :
- 72mOhm
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Channel Mode :
- Enhancement
- Manufacturer :
- IXYS
- Reach Compliance Code :
- Unknown
- Drain Current-Max (Abs) (ID) :
- 45A
- RoHS :
- Details
- Base Product Number :
- IXFR80
- Turn On Delay Time :
- 30 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 10000pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- Continuous Drain Current (ID) :
- 50A
- Power Dissipation :
- 570W
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- Brand :
- IXYS
- Transistor Element Material :
- SILICON
- Height :
- 21.34mm
- Drain to Source Voltage (Vdss) :
- 500V
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 570W Tc
- Product Type :
- MOSFET
- Number of Elements :
- 1
- Packaging :
- Tube
- Published :
- 2011
- Configuration :
- Single
- FET Feature :
- --
- Case Connection :
- Isolated
- Datasheets
- IXFR80N50Q3
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N-Channel Tube 72m Ω @ 40A, 10V ±30V 10000pF @ 25V 200nC @ 10V 500V TO-247-3
IXFR80N50Q3 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 5000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 10000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 50A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.A device can conduct a maximum continuous current of [45A] according to its drain current.It is [43 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 240A.A turn-on delay time of 30 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFR80N50Q3 Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 43 ns
based on its rated peak drain current 240A.
a 500V drain to source voltage (Vdss)
IXFR80N50Q3 Applications
There are a lot of IXYS
IXFR80N50Q3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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