IXFR80N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package :

Tube

FET Type :

N-Channel

Mounting Type :

Through Hole

Width :

5.21 mm

Vgs (Max) :

±30V

Reach Compliance Code :

Compliant

Channel Mode :

Enhancement

Terminal Form :

THROUGH-HOLE

Polarity/Channel Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Case Connection :

Isolated

Configuration :

Single

Number of Elements :

1

Mount :

Through Hole

Packaging :

Tube

Supplier Device Package :

ISOPLUS247™

Resistance :

72mOhm

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

30V

Transistor Type :

1 N-Channel

Isolation Voltage :

2.5kV

Package Shape :

RECTANGULAR

Power Dissipation-Max (Abs) :

360 W

Threshold Voltage :

5V

Rds On (Max) @ Id, Vgs :

72m Ω @ 40A, 10V

Surface Mount :

No

Product Status :

Active

Length :

16.13 mm

Height :

21.34 mm

Voltage - Rated DC :

500V

ECCN Code :

EAR99

Lead Free :

Lead Free

Published :

2006

Transistor Polarity :

N-Channel

Drain to Source Voltage (Vdss) :

500V

Drain-source On Resistance-Max :

0.072 Ω

Element Configuration :

Single

Package / Case :

ISOPLUS247™

Product Type :

MOSFET

FET Feature :

--

Pulsed Drain Current-Max (IDM) :

200A

Turn-Off Delay Time :

70 ns

Pbfree Code :

yes

Number of Channels :

1 Channel

Drain Current-Max (Abs) (ID) :

45 A

Pin Count :

3

Avalanche Energy Rating (Eas) :

3500 mJ

Current Rating :

80A

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

12700pF @ 25V

Number of Terminals :

3

Power Dissipation :

360W

Vgs(th) (Max) @ Id :

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs :

197nC @ 10V

Minimum Operating Temperature :

- 55 C

Product Category :

MOSFET

JESD-30 Code :

R-PSIP-T3

Operating Temperature :

-55°C~150°C TJ

Brand :

IXYS

Power Dissipation (Max) :

360W (Tc)

Continuous Drain Current (ID) :

45A

RoHS Status :

ROHS3 Compliant

Mounting Style :

Through Hole

Power Dissipation-Max :

360W Tc

Tradename :

HiPerFET

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

500V

JESD-609 Code :

e1

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

DS Breakdown Voltage-Min :

500 V

Current - Continuous Drain (Id) @ 25°C :

45A Tc

Qualification Status :

Not Qualified

Base Product Number :

IXFR80

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Manufacturer :

IXYS

Rise Time :

27ns

Number of Pins :

247

Maximum Operating Temperature :

+ 150 C

RoHS :

Details

Fall Time (Typ) :

16 ns

Transistor Application :

SWITCHING

Series :

HiPerFET™, PolarHT™

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED