IXFR80N50P
- Mfr.Part #
- IXFR80N50P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS247™
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 45A ISOPLUS247
- Stock
- 24,222
- In Stock :
- 24,222
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package :
- Tube
- Number of Terminals :
- 3
- Channel Mode :
- Enhancement
- Power Dissipation-Max :
- 360W Tc
- Package Shape :
- RECTANGULAR
- Reach Compliance Code :
- Compliant
- Tradename :
- HiPerFET
- Isolation Voltage :
- 2.5kV
- Turn-Off Delay Time :
- 70 ns
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 45A
- JESD-609 Code :
- e1
- Drain Current-Max (Abs) (ID) :
- 45 A
- Resistance :
- 72mOhm
- Current Rating :
- 80A
- Package / Case :
- ISOPLUS247™
- REACH SVHC :
- No SVHC
- Rise Time :
- 27ns
- Supplier Device Package :
- ISOPLUS247™
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- JESD-30 Code :
- R-PSIP-T3
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- 1 N-Channel
- Height :
- 21.34 mm
- Width :
- 5.21 mm
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- ECCN Code :
- EAR99
- Power Dissipation :
- 360W
- Drain to Source Voltage (Vdss) :
- 500V
- Transistor Element Material :
- SILICON
- Product Type :
- MOSFET
- Transistor Polarity :
- N-Channel
- Brand :
- IXYS
- Mount :
- Through Hole
- Mounting Style :
- Through Hole
- DS Breakdown Voltage-Min :
- 500 V
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 500V
- Input Capacitance (Ciss) (Max) @ Vds :
- 12700pF @ 25V
- Fall Time (Typ) :
- 16 ns
- FET Feature :
- --
- Base Product Number :
- IXFR80
- Packaging :
- Tube
- Product Category :
- MOSFET
- Number of Channels :
- 1 Channel
- Series :
- HiPerFET™, PolarHT™
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation-Max (Abs) :
- 360 W
- Surface Mount :
- No
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rds On (Max) @ Id, Vgs :
- 72m Ω @ 40A, 10V
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pin Count :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Published :
- 2006
- Minimum Operating Temperature :
- - 55 C
- Manufacturer :
- IXYS
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Radiation Hardening :
- No
- RoHS :
- Details
- Avalanche Energy Rating (Eas) :
- 3500 mJ
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 45A Tc
- Power Dissipation (Max) :
- 360W (Tc)
- Vgs (Max) :
- ±30V
- Product Status :
- Active
- Number of Pins :
- 247
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Polarity/Channel Type :
- N-Channel
- Element Configuration :
- Single
- Length :
- 16.13 mm
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 200A
- Gate Charge (Qg) (Max) @ Vgs :
- 197nC @ 10V
- Case Connection :
- Isolated
- Drain-source On Resistance-Max :
- 0.072 Ω
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Through Hole
- Threshold Voltage :
- 5V
- Maximum Operating Temperature :
- + 150 C
- Voltage - Rated DC :
- 500V
- Lead Free :
- Lead Free
- Terminal Position :
- Single
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- IXFR80N50P
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N-Channel Tube 72m Ω @ 40A, 10V ±30V 12700pF @ 25V 197nC @ 10V 500V ISOPLUS247™
IXFR80N50P Description
IXFR80N50P is a single bipolar transistor from the manufacturer Diodes Incorporated with the voltage of 500V. The operating temperature of IXFR80N50P is -55°C~150°C TJ and its maximum power dissipation is 2.1W. IXFR80N50P has 4 pins and it is available in Tape & Reel (TR) packaging method.
IXFR80N50P Features
Low drain to tab capacitance(<30pF)
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load Switching (UIS)
Fast intrinsic Rectifier
IXFR80N50P Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode power supplies
DC choppers
AC motor control
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