IXFR80N20Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

200V

Package / Case :

ISOPLUS247™

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Package Shape :

RECTANGULAR

FET Type :

N-Channel

Rise Time :

50ns

Package :

Tube

Polarity/Channel Type :

N-Channel

Power Dissipation-Max (Abs) :

310 W

Number of Elements :

1

Pin Count :

3

Number of Terminals :

3

Fall Time (Typ) :

20 ns

Drain Current-Max (Abs) (ID) :

80A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Packaging :

Tube

Manufacturer :

IXYS Corporation

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

200V

RoHS Status :

RoHS Compliant

Surface Mount :

No

Transistor Element Material :

SILICON

Series :

HiPerFET™

Pulsed Drain Current-Max (IDM) :

320 A

Turn-Off Delay Time :

75 ns

Product Status :

Obsolete

DS Breakdown Voltage-Min :

200 V

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

71A Tc

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 4mA

Continuous Drain Current (ID) :

71A

Element Configuration :

Single

Power Dissipation :

310W

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Mount :

Through Hole

JESD-30 Code :

R-PSIP-T3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation (Max) :

310W (Tc)

Input Capacitance (Ciss) (Max) @ Vds :

4600pF @ 25V

Base Product Number :

IXFR80

Pbfree Code :

yes

Qualification Status :

Not Qualified

Additional Feature :

AVALANCHE RATED

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Published :

2000

Rds On (Max) @ Id, Vgs :

28m Ω @ 80A, 10V

JESD-609 Code :

e1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Number of Pins :

3

Avalanche Energy Rating (Eas) :

1500 mJ

Supplier Device Package :

ISOPLUS247™

FET Feature :

--

Drain-source On Resistance-Max :

0.028Ohm

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Case Connection :

Isolated

Power Dissipation-Max :

310W Tc

Reach Compliance Code :

Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

THROUGH-HOLE