IXFR80N15Q

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Mfr.Part #
IXFR80N15Q
Manufacturer
Littelfuse
Package / Case
ISOPLUS247™
Datasheet
Download
Description
MOSFET N-CH 150V 75A ISOPLUS247
Stock
28,206
In Stock :
28,206

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
22.5m Ω @ 40A, 10V
Product Status :
Obsolete
Operating Mode :
ENHANCEMENT MODE
Number of Terminals :
3
Configuration :
SINGLE WITH BUILT-IN DIODE
Transistor Application :
SWITCHING
JESD-609 Code :
e1
Number of Pins :
3
FET Type :
N-Channel
FET Feature :
--
Vgs (Max) :
±20V
Continuous Drain Current (ID) :
75A
Input Capacitance (Ciss) (Max) @ Vds :
4600pF @ 25V
Package :
Tube
Drain to Source Breakdown Voltage :
150V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation :
310W
Package / Case :
ISOPLUS247™
Supplier Device Package :
ISOPLUS247™
Element Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
75A Tc
Mounting Type :
Through Hole
Drain-source On Resistance-Max :
0.0225Ohm
Gate to Source Voltage (Vgs) :
20V
Qualification Status :
Not Qualified
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Base Product Number :
IXFR80
Drain Current-Max (Abs) (ID) :
75 A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Additional Feature :
AVALANCHE RATED
Packaging :
Tube
Series :
HiPerFET™
Case Connection :
Isolated
Terminal Position :
Single
Surface Mount :
No
Pbfree Code :
yes
Turn-Off Delay Time :
68 ns
Number of Elements :
1
Avalanche Energy Rating (Eas) :
1500 mJ
Power Dissipation-Max (Abs) :
310 W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS Status :
RoHS Compliant
Reach Compliance Code :
Compliant
Power Dissipation (Max) :
310W (Tc)
Terminal Form :
THROUGH-HOLE
Published :
2000
Rise Time :
55ns
Package Shape :
RECTANGULAR
DS Breakdown Voltage-Min :
150 V
Manufacturer :
IXYS Corporation
ECCN Code :
EAR99
Transistor Element Material :
SILICON
Pin Count :
3
Power Dissipation-Max :
310W Tc
Operating Temperature :
-55°C~150°C TJ
Mount :
Through Hole
Polarity/Channel Type :
N-Channel
JESD-30 Code :
R-PSIP-T3
Fall Time (Typ) :
20 ns
Number of Terminations :
3
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Vgs(th) (Max) @ Id :
4V @ 4mA
Drain to Source Voltage (Vdss) :
150V
Pulsed Drain Current-Max (IDM) :
320 A
Datasheets
IXFR80N15Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFR80N15Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:ISOPLUS247™, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, IXFR80N15Q pinout, IXFR80N15Q datasheet PDF, IXFR80N15Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFR80N15Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFR80N15Q


N-Channel Tube 22.5m Ω @ 40A, 10V ±20V 4600pF @ 25V 180nC @ 10V 150V ISOPLUS247™

IXFR80N15Q Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The maximum input capacitance of this device is 4600pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 75A.When VGS=150V, and ID flows to VDS at 150VVDS, the drain-source breakdown voltage is 150V in this device.As shown in the table below, the drain current of this device is 75 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 68 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 320 A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 150 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 150V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFR80N15Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 68 ns
based on its rated peak drain current 320 A.
a 150V drain to source voltage (Vdss)


IXFR80N15Q Applications


There are a lot of IXYS
IXFR80N15Q applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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