IXFR80N15Q
- Mfr.Part #
- IXFR80N15Q
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS247™
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 75A ISOPLUS247
- Stock
- 28,206
- In Stock :
- 28,206
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 22.5m Ω @ 40A, 10V
- Product Status :
- Obsolete
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminals :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e1
- Number of Pins :
- 3
- FET Type :
- N-Channel
- FET Feature :
- --
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 75A
- Input Capacitance (Ciss) (Max) @ Vds :
- 4600pF @ 25V
- Package :
- Tube
- Drain to Source Breakdown Voltage :
- 150V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation :
- 310W
- Package / Case :
- ISOPLUS247™
- Supplier Device Package :
- ISOPLUS247™
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Mounting Type :
- Through Hole
- Drain-source On Resistance-Max :
- 0.0225Ohm
- Gate to Source Voltage (Vgs) :
- 20V
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Product Number :
- IXFR80
- Drain Current-Max (Abs) (ID) :
- 75 A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Additional Feature :
- AVALANCHE RATED
- Packaging :
- Tube
- Series :
- HiPerFET™
- Case Connection :
- Isolated
- Terminal Position :
- Single
- Surface Mount :
- No
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 68 ns
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Power Dissipation-Max (Abs) :
- 310 W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- RoHS Compliant
- Reach Compliance Code :
- Compliant
- Power Dissipation (Max) :
- 310W (Tc)
- Terminal Form :
- THROUGH-HOLE
- Published :
- 2000
- Rise Time :
- 55ns
- Package Shape :
- RECTANGULAR
- DS Breakdown Voltage-Min :
- 150 V
- Manufacturer :
- IXYS Corporation
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Power Dissipation-Max :
- 310W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Polarity/Channel Type :
- N-Channel
- JESD-30 Code :
- R-PSIP-T3
- Fall Time (Typ) :
- 20 ns
- Number of Terminations :
- 3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Drain to Source Voltage (Vdss) :
- 150V
- Pulsed Drain Current-Max (IDM) :
- 320 A
- Datasheets
- IXFR80N15Q
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N-Channel Tube 22.5m Ω @ 40A, 10V ±20V 4600pF @ 25V 180nC @ 10V 150V ISOPLUS247™
IXFR80N15Q Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The maximum input capacitance of this device is 4600pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 75A.When VGS=150V, and ID flows to VDS at 150VVDS, the drain-source breakdown voltage is 150V in this device.As shown in the table below, the drain current of this device is 75 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 68 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 320 A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 150 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 150V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFR80N15Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 68 ns
based on its rated peak drain current 320 A.
a 150V drain to source voltage (Vdss)
IXFR80N15Q Applications
There are a lot of IXYS
IXFR80N15Q applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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