IXFR80N10Q

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Mfr.Part #
IXFR80N10Q
Manufacturer
Littelfuse
Package / Case
ISOPLUS247™
Datasheet
Download
Description
MOSFET N-CH 100V 76A ISOPLUS247
Stock
46,706
In Stock :
46,706

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Mode :
ENHANCEMENT MODE
Gate to Source Voltage (Vgs) :
20V
Published :
2000
Fall Time (Typ) :
30 ns
Mount :
Through Hole
Rise Time :
70ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
DS Breakdown Voltage-Min :
100 V
Package / Case :
ISOPLUS247™
Number of Terminations :
3
Base Product Number :
IXFR80
Surface Mount :
No
RoHS Status :
RoHS Compliant
Package Shape :
RECTANGULAR
Number of Pins :
3
Current - Continuous Drain (Id) @ 25°C :
76A Tc
Drain to Source Breakdown Voltage :
100V
Transistor Application :
SWITCHING
Qualification Status :
Not Qualified
FET Type :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain to Source Voltage (Vdss) :
100V
Vgs(th) (Max) @ Id :
--
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 25V
Turn-Off Delay Time :
68 ns
Additional Feature :
AVALANCHE RATED
Series :
HiPerFET™
Terminal Position :
Single
Manufacturer :
IXYS Corporation
Pulsed Drain Current-Max (IDM) :
304 A
Continuous Drain Current (ID) :
76A
Configuration :
SINGLE WITH BUILT-IN DIODE
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Operating Temperature :
-55°C~150°C TJ
Product Status :
Obsolete
Pbfree Code :
yes
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain-source On Resistance-Max :
0.015Ohm
Number of Elements :
1
Power Dissipation (Max) :
310W (Tc)
Terminal Form :
THROUGH-HOLE
Vgs (Max) :
±20V
FET Feature :
--
JESD-30 Code :
R-PSIP-T3
Number of Terminals :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Type :
Through Hole
Case Connection :
Isolated
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation :
310W
Reach Compliance Code :
Compliant
Transistor Element Material :
SILICON
Avalanche Energy Rating (Eas) :
1500 mJ
Polarity/Channel Type :
N-Channel
Supplier Device Package :
ISOPLUS247™
Element Configuration :
Single
Power Dissipation-Max :
310W Tc
JESD-609 Code :
e1
Pin Count :
3
Rds On (Max) @ Id, Vgs :
15m Ω @ 76A, 10V
ECCN Code :
EAR99
Package :
Tube
Terminal Finish :
TIN SILVER COPPER
Datasheets
IXFR80N10Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFR80N10Q from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:ISOPLUS247™, Number of Terminations:3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, IXFR80N10Q pinout, IXFR80N10Q datasheet PDF, IXFR80N10Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFR80N10Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFR80N10Q


N-Channel Tube 15m Ω @ 76A, 10V ±20V 4500pF @ 25V 180nC @ 10V 100V ISOPLUS247™

IXFR80N10Q Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 4500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 76A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 68 ns.Its maximum pulsed drain current is 304 A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 100 V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFR80N10Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 76A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 68 ns
based on its rated peak drain current 304 A.
a 100V drain to source voltage (Vdss)


IXFR80N10Q Applications


There are a lot of IXYS
IXFR80N10Q applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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