IXFR80N10Q
- Mfr.Part #
- IXFR80N10Q
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS247™
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 76A ISOPLUS247
- Stock
- 46,706
- In Stock :
- 46,706
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2000
- Fall Time (Typ) :
- 30 ns
- Mount :
- Through Hole
- Rise Time :
- 70ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 100 V
- Package / Case :
- ISOPLUS247™
- Number of Terminations :
- 3
- Base Product Number :
- IXFR80
- Surface Mount :
- No
- RoHS Status :
- RoHS Compliant
- Package Shape :
- RECTANGULAR
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 76A Tc
- Drain to Source Breakdown Voltage :
- 100V
- Transistor Application :
- SWITCHING
- Qualification Status :
- Not Qualified
- FET Type :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain to Source Voltage (Vdss) :
- 100V
- Vgs(th) (Max) @ Id :
- --
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Turn-Off Delay Time :
- 68 ns
- Additional Feature :
- AVALANCHE RATED
- Series :
- HiPerFET™
- Terminal Position :
- Single
- Manufacturer :
- IXYS Corporation
- Pulsed Drain Current-Max (IDM) :
- 304 A
- Continuous Drain Current (ID) :
- 76A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Product Status :
- Obsolete
- Pbfree Code :
- yes
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.015Ohm
- Number of Elements :
- 1
- Power Dissipation (Max) :
- 310W (Tc)
- Terminal Form :
- THROUGH-HOLE
- Vgs (Max) :
- ±20V
- FET Feature :
- --
- JESD-30 Code :
- R-PSIP-T3
- Number of Terminals :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Case Connection :
- Isolated
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation :
- 310W
- Reach Compliance Code :
- Compliant
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Polarity/Channel Type :
- N-Channel
- Supplier Device Package :
- ISOPLUS247™
- Element Configuration :
- Single
- Power Dissipation-Max :
- 310W Tc
- JESD-609 Code :
- e1
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 76A, 10V
- ECCN Code :
- EAR99
- Package :
- Tube
- Terminal Finish :
- TIN SILVER COPPER
- Datasheets
- IXFR80N10Q
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N-Channel Tube 15m Ω @ 76A, 10V ±20V 4500pF @ 25V 180nC @ 10V 100V ISOPLUS247™
IXFR80N10Q Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 4500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 76A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 68 ns.Its maximum pulsed drain current is 304 A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 100 V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFR80N10Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 76A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 68 ns
based on its rated peak drain current 304 A.
a 100V drain to source voltage (Vdss)
IXFR80N10Q Applications
There are a lot of IXYS
IXFR80N10Q applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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