IXFR70N15
- Mfr.Part #
- IXFR70N15
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS247™
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 67A ISOPLUS247
- Stock
- 40,735
- In Stock :
- 40,735
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- DS Breakdown Voltage-Min :
- 150 V
- Product Type :
- MOSFET
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Product Category :
- MOSFET
- Configuration :
- Single
- Transistor Application :
- SWITCHING
- Base Product Number :
- IXFR70
- Current - Continuous Drain (Id) @ 25°C :
- 67A Tc
- Number of Elements :
- 1
- Supplier Device Package :
- ISOPLUS247™
- Number of Terminations :
- 3
- Minimum Operating Temperature :
- - 55 C
- Terminal Position :
- Single
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 28m Ω @ 35A, 10V
- Package Shape :
- RECTANGULAR
- Additional Feature :
- AVALANCHE RATED
- Tradename :
- HyperFET
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Number of Terminals :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 25V
- Height :
- 21.34 mm
- Width :
- 5.21 mm
- Published :
- 2000
- Transistor Polarity :
- N-Channel
- Reach Compliance Code :
- Compliant
- Packaging :
- Tube
- Product Status :
- Active
- Package / Case :
- ISOPLUS247™
- Gate to Source Voltage (Vgs) :
- 20V
- Polarity/Channel Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- RoHS :
- Details
- Subcategory :
- MOSFETs
- Turn-Off Delay Time :
- 70 ns
- Power Dissipation (Max) :
- 250W (Tc)
- Drain to Source Breakdown Voltage :
- 150V
- Rise Time :
- 52ns
- FET Feature :
- --
- Mount :
- Through Hole
- Case Connection :
- Isolated
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Continuous Drain Current (ID) :
- 67A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Series :
- HiPerFET™
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Pbfree Code :
- yes
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Brand :
- IXYS
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- R-PSIP-T3
- FET Type :
- N-Channel
- JESD-609 Code :
- e1
- Element Configuration :
- Single
- Power Dissipation :
- 250W
- Fall Time (Typ) :
- 25 ns
- Length :
- 16.13 mm
- Mounting Style :
- Through Hole
- ECCN Code :
- EAR99
- Package :
- Tube
- Drain to Source Voltage (Vdss) :
- 150V
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Type :
- 1 N-Channel
- Number of Channels :
- 1 Channel
- Channel Mode :
- Enhancement
- Drain-source On Resistance-Max :
- 0.028Ohm
- Power Dissipation-Max :
- 250W Tc
- Terminal Form :
- THROUGH-HOLE
- Surface Mount :
- No
- Maximum Operating Temperature :
- + 150 C
- Manufacturer :
- IXYS
- Number of Pins :
- 3
- Qualification Status :
- Not Qualified
- Pulsed Drain Current-Max (IDM) :
- 70A
- Datasheets
- IXFR70N15
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N-Channel Tube 28m Ω @ 35A, 10V ±20V 3600pF @ 25V 180nC @ 10V 150V ISOPLUS247™
IXFR70N15 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3600pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 67A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=150V. And this device has 150V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 70 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 70A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 150 V in order to maintain normal operation.Operating this transistor requires a 150V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFR70N15 Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 67A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 70A.
a 150V drain to source voltage (Vdss)
IXFR70N15 Applications
There are a lot of IXYS
IXFR70N15 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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