IXFR64N60Q3

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Mfr.Part #
IXFR64N60Q3
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 42A ISOPLUS247
Stock
30
In Stock :
30

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Reach Compliance Code :
Compliant
Case Connection :
Isolated
JESD-30 Code :
R-PSIP-T3
Element Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
42A Tc
Power Dissipation-Max :
568W Tc
Package :
Tube
Tradename :
HiPerFET
Transistor Polarity :
N-Channel
Mounting Style :
Through Hole
Turn-Off Delay Time :
50 ns
Number of Pins :
247
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
104m Ω @ 32A, 10V
Gate to Source Voltage (Vgs) :
30V
FET Type :
N-Channel
Surface Mount :
No
Polarity/Channel Type :
N-Channel
Product Category :
MOSFET
Number of Terminals :
3
Product Type :
MOSFET
Terminal Form :
THROUGH-HOLE
Operating Temperature :
-55°C~150°C TJ
Input Capacitance (Ciss) (Max) @ Vds :
9930pF @ 25V
Length :
16.13mm
Brand :
IXYS
Rise Time :
300ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Elements :
1
Width :
5.21mm
Series :
HiPerFET™
Transistor Application :
SWITCHING
Drain to Source Voltage (Vdss) :
600V
Drain Current-Max (Abs) (ID) :
42 A
Product Status :
Active
Published :
2011
Number of Channels :
1 Channel
Package Shape :
RECTANGULAR
Drain to Source Breakdown Voltage :
600V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) :
568 W
Turn On Delay Time :
45 ns
Terminal Position :
Single
FET Feature :
-
Package / Case :
TO-247-3
Vgs (Max) :
±30V
Configuration :
Single
Mount :
Through Hole
Number of Terminations :
3
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Power Dissipation (Max) :
568W (Tc)
Pulsed Drain Current-Max (IDM) :
250A
Factory Lead Time :
30 Weeks
Manufacturer :
IXYS
Packaging :
Tube
Transistor Element Material :
SILICON
Transistor Type :
1 N-Channel
DS Breakdown Voltage-Min :
600 V
Supplier Device Package :
ISOPLUS247™
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Pin Count :
3
Vgs(th) (Max) @ Id :
6.5V @ 4mA
Continuous Drain Current (ID) :
42A
Base Product Number :
IXFR64
Mounting Type :
Through Hole
Operating Mode :
ENHANCEMENT MODE
Avalanche Energy Rating (Eas) :
3000 mJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Height :
21.34mm
Power Dissipation :
568W
Drain-source On Resistance-Max :
0.104Ohm
RoHS :
Details
Datasheets
IXFR64N60Q3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFR64N60Q3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:247, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Package / Case:TO-247-3, Number of Terminations:3, Mounting Type:Through Hole, IXFR64N60Q3 pinout, IXFR64N60Q3 datasheet PDF, IXFR64N60Q3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFR64N60Q3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFR64N60Q3


N-Channel Tube 104m Ω @ 32A, 10V ±30V 9930pF @ 25V 190nC @ 10V 600V TO-247-3

IXFR64N60Q3 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 9930pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.There is no drain current on this device since the maximum continuous current it can conduct is 42 A.As a result of its turn-off delay time, which is 50 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 250A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 45 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 600 V, it should remain above the 600 V level.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFR64N60Q3 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 42A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 250A.
a 600V drain to source voltage (Vdss)


IXFR64N60Q3 Applications


There are a lot of IXYS
IXFR64N60Q3 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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