IXFR64N60Q3
- Mfr.Part #
- IXFR64N60Q3
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 42A ISOPLUS247
- Stock
- 30
- In Stock :
- 30
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- Compliant
- Case Connection :
- Isolated
- JESD-30 Code :
- R-PSIP-T3
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 42A Tc
- Power Dissipation-Max :
- 568W Tc
- Package :
- Tube
- Tradename :
- HiPerFET
- Transistor Polarity :
- N-Channel
- Mounting Style :
- Through Hole
- Turn-Off Delay Time :
- 50 ns
- Number of Pins :
- 247
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 104m Ω @ 32A, 10V
- Gate to Source Voltage (Vgs) :
- 30V
- FET Type :
- N-Channel
- Surface Mount :
- No
- Polarity/Channel Type :
- N-Channel
- Product Category :
- MOSFET
- Number of Terminals :
- 3
- Product Type :
- MOSFET
- Terminal Form :
- THROUGH-HOLE
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 9930pF @ 25V
- Length :
- 16.13mm
- Brand :
- IXYS
- Rise Time :
- 300ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Width :
- 5.21mm
- Series :
- HiPerFET™
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 600V
- Drain Current-Max (Abs) (ID) :
- 42 A
- Product Status :
- Active
- Published :
- 2011
- Number of Channels :
- 1 Channel
- Package Shape :
- RECTANGULAR
- Drain to Source Breakdown Voltage :
- 600V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs) :
- 568 W
- Turn On Delay Time :
- 45 ns
- Terminal Position :
- Single
- FET Feature :
- -
- Package / Case :
- TO-247-3
- Vgs (Max) :
- ±30V
- Configuration :
- Single
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- Power Dissipation (Max) :
- 568W (Tc)
- Pulsed Drain Current-Max (IDM) :
- 250A
- Factory Lead Time :
- 30 Weeks
- Manufacturer :
- IXYS
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Transistor Type :
- 1 N-Channel
- DS Breakdown Voltage-Min :
- 600 V
- Supplier Device Package :
- ISOPLUS247™
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Pin Count :
- 3
- Vgs(th) (Max) @ Id :
- 6.5V @ 4mA
- Continuous Drain Current (ID) :
- 42A
- Base Product Number :
- IXFR64
- Mounting Type :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 21.34mm
- Power Dissipation :
- 568W
- Drain-source On Resistance-Max :
- 0.104Ohm
- RoHS :
- Details
- Datasheets
- IXFR64N60Q3
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N-Channel Tube 104m Ω @ 32A, 10V ±30V 9930pF @ 25V 190nC @ 10V 600V TO-247-3
IXFR64N60Q3 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 9930pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.There is no drain current on this device since the maximum continuous current it can conduct is 42 A.As a result of its turn-off delay time, which is 50 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 250A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 45 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 600 V, it should remain above the 600 V level.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFR64N60Q3 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 42A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 250A.
a 600V drain to source voltage (Vdss)
IXFR64N60Q3 Applications
There are a lot of IXYS
IXFR64N60Q3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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