IXFR64N50Q3

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Mfr.Part #
IXFR64N50Q3
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 45A ISOPLUS247
Stock
1
In Stock :
1

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Type :
MOSFET
Base Product Number :
IXFR64
FET Type :
N-Channel
Continuous Drain Current (ID) :
45A
Number of Pins :
247
Tradename :
HiPerFET
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Turn On Delay Time :
36 ns
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
6.5V @ 4mA
Number of Elements :
1
Published :
2011
Terminal Position :
Single
Package / Case :
TO-247-3
Series :
HiPerFET™
Package :
Tube
Power Dissipation-Max :
500W Tc
Polarity/Channel Type :
N-Channel
Factory Lead Time :
30 Weeks
Product Category :
MOSFET
Width :
5.21mm
DS Breakdown Voltage-Min :
500 V
Drain Current-Max (Abs) (ID) :
45 A
Number of Terminations :
3
Transistor Element Material :
SILICON
Pulsed Drain Current-Max (IDM) :
160A
Terminal Form :
THROUGH-HOLE
Vgs (Max) :
±30V
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max (Abs) :
500 W
Operating Temperature :
-55°C~150°C TJ
Power Dissipation (Max) :
500W (Tc)
Drain-source On Resistance-Max :
0.094Ohm
Number of Channels :
1 Channel
Mounting Style :
Through Hole
Supplier Device Package :
ISOPLUS247™
Package Shape :
RECTANGULAR
FET Feature :
--
Packaging :
Tube
Channel Mode :
Enhancement
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pin Count :
3
Mount :
Through Hole
Element Configuration :
Single
Configuration :
Single
Number of Terminals :
3
Avalanche Energy Rating (Eas) :
4000 mJ
Length :
16.13mm
Number of Elements per Chip :
1
Rds On (Max) @ Id, Vgs :
95m Ω @ 32A, 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS :
Details
Drain to Source Breakdown Voltage :
500V
Manufacturer :
IXYS
Gate to Source Voltage (Vgs) :
30V
Height :
21.34mm
Turn-Off Delay Time :
46 ns
Input Capacitance (Ciss) (Max) @ Vds :
6950pF @ 25V
Drain to Source Voltage (Vdss) :
500V
Transistor Type :
1 N-Channel
Reach Compliance Code :
Compliant
Product Status :
Active
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Brand :
IXYS
Power Dissipation :
500W
Transistor Application :
SWITCHING
Gate Charge (Qg) (Max) @ Vgs :
145nC @ 10V
Case Connection :
Isolated
Current - Continuous Drain (Id) @ 25°C :
45A Tc
Maximum Operating Temperature :
+150 °C
Minimum Operating Temperature :
-55 °C
Transistor Polarity :
N-Channel
Mounting Type :
Through Hole
Surface Mount :
No
JESD-30 Code :
R-PSIP-T3
Package Type :
ISOPLUS247
Channel Type :
N
Rise Time :
250ns
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFR64N50Q3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:247, Package / Case:TO-247-3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Mounting Type:Through Hole, IXFR64N50Q3 pinout, IXFR64N50Q3 datasheet PDF, IXFR64N50Q3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFR64N50Q3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFR64N50Q3


N-Channel Tube 95m Ω @ 32A, 10V ±30V 6950pF @ 25V 145nC @ 10V 500V TO-247-3

IXFR64N50Q3 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 4000 mJ.A device's maximal input capacitance is 6950pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 45A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 45 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 46 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 160A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 36 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500 V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFR64N50Q3 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 45A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 46 ns
based on its rated peak drain current 160A.
a 500V drain to source voltage (Vdss)


IXFR64N50Q3 Applications


There are a lot of IXYS
IXFR64N50Q3 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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