IXFR64N50Q3
- Mfr.Part #
- IXFR64N50Q3
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 45A ISOPLUS247
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Type :
- MOSFET
- Base Product Number :
- IXFR64
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 45A
- Number of Pins :
- 247
- Tradename :
- HiPerFET
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Turn On Delay Time :
- 36 ns
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 6.5V @ 4mA
- Number of Elements :
- 1
- Published :
- 2011
- Terminal Position :
- Single
- Package / Case :
- TO-247-3
- Series :
- HiPerFET™
- Package :
- Tube
- Power Dissipation-Max :
- 500W Tc
- Polarity/Channel Type :
- N-Channel
- Factory Lead Time :
- 30 Weeks
- Product Category :
- MOSFET
- Width :
- 5.21mm
- DS Breakdown Voltage-Min :
- 500 V
- Drain Current-Max (Abs) (ID) :
- 45 A
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 160A
- Terminal Form :
- THROUGH-HOLE
- Vgs (Max) :
- ±30V
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max (Abs) :
- 500 W
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation (Max) :
- 500W (Tc)
- Drain-source On Resistance-Max :
- 0.094Ohm
- Number of Channels :
- 1 Channel
- Mounting Style :
- Through Hole
- Supplier Device Package :
- ISOPLUS247™
- Package Shape :
- RECTANGULAR
- FET Feature :
- --
- Packaging :
- Tube
- Channel Mode :
- Enhancement
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 3
- Mount :
- Through Hole
- Element Configuration :
- Single
- Configuration :
- Single
- Number of Terminals :
- 3
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Length :
- 16.13mm
- Number of Elements per Chip :
- 1
- Rds On (Max) @ Id, Vgs :
- 95m Ω @ 32A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS :
- Details
- Drain to Source Breakdown Voltage :
- 500V
- Manufacturer :
- IXYS
- Gate to Source Voltage (Vgs) :
- 30V
- Height :
- 21.34mm
- Turn-Off Delay Time :
- 46 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 6950pF @ 25V
- Drain to Source Voltage (Vdss) :
- 500V
- Transistor Type :
- 1 N-Channel
- Reach Compliance Code :
- Compliant
- Product Status :
- Active
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Brand :
- IXYS
- Power Dissipation :
- 500W
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 145nC @ 10V
- Case Connection :
- Isolated
- Current - Continuous Drain (Id) @ 25°C :
- 45A Tc
- Maximum Operating Temperature :
- +150 °C
- Minimum Operating Temperature :
- -55 °C
- Transistor Polarity :
- N-Channel
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- JESD-30 Code :
- R-PSIP-T3
- Package Type :
- ISOPLUS247
- Channel Type :
- N
- Rise Time :
- 250ns
- Datasheets
- IXFR64N50Q3
IXFR64N50Q3 Documents
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N-Channel Tube 95m Ω @ 32A, 10V ±30V 6950pF @ 25V 145nC @ 10V 500V TO-247-3
IXFR64N50Q3 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 4000 mJ.A device's maximal input capacitance is 6950pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 45A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 45 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 46 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 160A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 36 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500 V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFR64N50Q3 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 45A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 46 ns
based on its rated peak drain current 160A.
a 500V drain to source voltage (Vdss)
IXFR64N50Q3 Applications
There are a lot of IXYS
IXFR64N50Q3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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