IXFR64N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max (Abs) :

300 W

Drain to Source Voltage (Vdss) :

500V

Transistor Application :

SWITCHING

Case Connection :

Isolated

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package Shape :

RECTANGULAR

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Packaging :

Tube

Base Product Number :

IXFR64

Surface Mount :

No

Avalanche Energy Rating (Eas) :

2500 mJ

Power Dissipation :

300W

Number of Channels :

1 Channel

Brand :

IXYS

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Rise Time :

25ns

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Reach Compliance Code :

Compliant

Vgs (Max) :

±30V

Minimum Operating Temperature :

- 55 C

Product Category :

MOSFET

Current Rating :

64A

Rds On (Max) @ Id, Vgs :

95m Ω @ 32A, 10V

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

85 ns

Product Status :

Active

JEDEC-95 Code :

TO-247AD

Drain Current-Max (Abs) (ID) :

37 A

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Width :

5.21 mm

Series :

HiPerFET™, PolarHT™

Continuous Drain Current (ID) :

35A

Channel Mode :

Enhancement

Published :

2006

FET Feature :

--

Maximum Operating Temperature :

+ 150 C

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max :

300W Tc

Mounting Style :

Through Hole

Tradename :

HiPerFET

Number of Pins :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

ISOPLUS247™

Height :

21.34 mm

Terminal Form :

THROUGH-HOLE

Operating Mode :

ENHANCEMENT MODE

Length :

16.13 mm

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

500V

Supplier Device Package :

ISOPLUS247™

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

8700pF @ 25V

REACH SVHC :

No SVHC

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lead Free :

Lead Free

DS Breakdown Voltage-Min :

500 V

Configuration :

Single

JESD-609 Code :

e1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminals :

3

Terminal Position :

Single

Vgs(th) (Max) @ Id :

5.5V @ 8mA

Pin Count :

3

Polarity/Channel Type :

N-Channel

Drain-source On Resistance-Max :

0.095Ohm

Fall Time (Typ) :

22 ns

Threshold Voltage :

5.5V

Pbfree Code :

yes

Number of Elements :

1

Package :

Tube

FET Type :

N-Channel

Manufacturer :

IXYS

Number of Terminations :

3

Voltage - Rated DC :

500V

Transistor Element Material :

SILICON

Transistor Type :

1 N-Channel

Power Dissipation (Max) :

300W (Tc)

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

150A

RoHS :

Details

Isolation Voltage :

2.5kV

Transistor Polarity :

N-Channel

Product Type :

MOSFET

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V