IXFR58N20
- Mfr.Part #
- IXFR58N20
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS247™
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 50A ISOPLUS247
- Stock
- 19,022
- In Stock :
- 19,022
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Power Dissipation (Max) :
- 300W (Tc)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package / Case :
- ISOPLUS247™
- Transistor Polarity :
- N-Channel
- Product Status :
- Active
- Power Dissipation-Max :
- 300W Tc
- Brand :
- IXYS
- Number of Terminations :
- 3
- Additional Feature :
- AVALANCHE RATED
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 25V
- Supplier Device Package :
- ISOPLUS247™
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Transistor Type :
- 1 N-Channel
- Case Connection :
- Isolated
- Mounting Style :
- Through Hole
- JESD-30 Code :
- R-PSIP-T3
- Continuous Drain Current (ID) :
- 50A
- JESD-609 Code :
- e1
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Product Category :
- MOSFET
- Mount :
- Through Hole
- Factory Lead Time :
- 26 Weeks
- Package :
- Tube
- Qualification Status :
- Not Qualified
- Base Product Number :
- IXFR58
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 140nC @ 10V
- Tradename :
- HiPerFET
- Drain-source On Resistance-Max :
- 0.04Ohm
- FET Feature :
- --
- Drain to Source Voltage (Vdss) :
- 200V
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Published :
- 2003
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tube
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- DS Breakdown Voltage-Min :
- 200V
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 232A
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 29A, 10V
- Series :
- HiPerFET™
- Terminal Position :
- Single
- RoHS Status :
- ROHS3 Compliant
- Product Type :
- MOSFET
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- Manufacturer :
- IXYS
- Number of Channels :
- 1 Channel
- Datasheets
- IXFR58N20
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N-Channel Tube 40m Ω @ 29A, 10V ±20V 3600pF @ 25V 140nC @ 10V 200V ISOPLUS247™
IXFR58N20 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 3600pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 50A, which represents the maximum continuous current it can conduct.In terms of pulsed drain current, it has a maximum of 232A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 200V.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFR58N20 Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 50A
based on its rated peak drain current 232A.
a 200V drain to source voltage (Vdss)
IXFR58N20 Applications
There are a lot of IXYS
IXFR58N20 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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