IXFR48N60Q3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package Type :

ISOPLUS247

RoHS :

Details

Element Configuration :

Single

Supplier Device Package :

ISOPLUS247™

Mounting Style :

Through Hole

Minimum Operating Temperature :

-55 °C

Number of Pins :

247

Number of Terminations :

3

Width :

5.21mm

Vgs (Max) :

±30V

Number of Terminals :

3

Turn-Off Delay Time :

40 ns

Rds On (Max) @ Id, Vgs :

154m Ω @ 24A, 10V

Resistance :

154Ohm

Number of Elements :

1

Package :

Tube

Power Dissipation :

500W

Transistor Element Material :

SILICON

Package / Case :

TO-247-3

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

600V

DS Breakdown Voltage-Min :

600 V

Case Connection :

Isolated

Transistor Application :

SWITCHING

Power Dissipation-Max (Abs) :

500 W

Series :

HiPerFET™

Configuration :

Single

Drain-source On Resistance-Max :

0.154 Ω

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

120A

Base Product Number :

IXFR48

Transistor Type :

1 N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

7020pF @ 25V

Avalanche Energy Rating (Eas) :

2000 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

37 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Manufacturer :

IXYS

Reach Compliance Code :

Unknown

Drain Current-Max (Abs) (ID) :

32 A

FET Feature :

--

Height :

21.34mm

Mount :

Through Hole

Transistor Polarity :

N-Channel

Power Dissipation-Max :

500W Tc

Rise Time :

300ns

Continuous Drain Current (ID) :

32A

Product Type :

MOSFET

Surface Mount :

No

Product Status :

Active

Terminal Form :

THROUGH-HOLE

Power Dissipation (Max) :

500W (Tc)

Tradename :

HiPerFET

Packaging :

Tube

Number of Channels :

1 Channel

Maximum Operating Temperature :

+150 °C

Gate to Source Voltage (Vgs) :

30V

JESD-30 Code :

R-PSIP-T3

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Brand :

IXYS

Pin Count :

3

Length :

16.13mm

Drain to Source Voltage (Vdss) :

600V

Channel Mode :

Enhancement

Product Category :

MOSFET

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Factory Lead Time :

30 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Through Hole

Number of Elements per Chip :

1

Polarity/Channel Type :

N-Channel

Channel Type :

N

Operating Mode :

ENHANCEMENT MODE

Package Shape :

RECTANGULAR

Published :

2011

Vgs(th) (Max) @ Id :

6.5V @ 4mA

FET Type :

N-Channel