IXFR48N60P
- Mfr.Part #
- IXFR48N60P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS247™
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 32A ISOPLUS247
- Stock
- 208
- In Stock :
- 208
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Number of Terminals :
- 3
- Package / Case :
- ISOPLUS247™
- Continuous Drain Current Id :
- 32A
- Pbfree Code :
- yes
- Channel Type :
- N Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Type :
- MOSFET
- Mounting Style :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Product Status :
- Active
- JESD-609 Code :
- e1
- Supplier Device Package :
- ISOPLUS247™
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 600V
- Drain-source On Resistance-Max :
- 0.15Ohm
- Polarity/Channel Type :
- N-Channel
- Mounting Type :
- Through Hole
- Package :
- Tube
- DS Breakdown Voltage-Min :
- 600 V
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 22 ns
- Series :
- HiPerFET™, PolarHT™
- Length :
- 16.13 mm
- Subcategory :
- MOSFETs
- Transistor Polarity :
- N-Channel
- Qualification :
- -
- Manufacturer :
- IXYS
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Vgs (Max) :
- ±30V
- Current Rating :
- 48A
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Lead Free :
- Lead Free
- Product Category :
- MOSFET
- Power Dissipation (Max) :
- 300W (Tc)
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rds On (Max) @ Id, Vgs :
- 150m Ω @ 24A, 10V
- Case Connection :
- Isolated
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- ECCN Code :
- EAR99
- FET Feature :
- --
- Package Shape :
- RECTANGULAR
- Voltage - Rated DC :
- 600V
- Tradename :
- HiPerFET
- Mount :
- Through Hole
- Maximum Operating Temperature :
- + 150 C
- MSL :
- MSL 1 - Unlimited
- Pin Count :
- 3
- Width :
- 5.21 mm
- Number of Channels :
- 1 Channel
- Continuous Drain Current (ID) :
- 32A
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Reach Compliance Code :
- Compliant
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drain to Source Voltage (Vdss) :
- 600V
- Transistor Application :
- SWITCHING
- Channel Mode :
- Enhancement
- Terminal Form :
- THROUGH-HOLE
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSIP-T3
- Configuration :
- Single
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 300W Tc
- Transistor Type :
- 1 N-Channel
- Factory Lead Time :
- 30 Weeks
- Number of Pins :
- 3
- Surface Mount :
- No
- Published :
- 2006
- Gate to Source Voltage (Vgs) :
- 30V
- Minimum Operating Temperature :
- - 55 C
- Turn-Off Delay Time :
- 85 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 8860pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Qualification Status :
- Not Qualified
- Base Product Number :
- IXFR48
- Brand :
- IXYS
- Power Dissipation :
- 300W
- RoHS :
- Details
- Rise Time :
- 25ns
- Packaging :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 110A
- Height :
- 21.34 mm
- Number of Terminations :
- 3
- Datasheets
- IXFR48N60P
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N-Channel Tube 150m Ω @ 24A, 10V ±30V 8860pF @ 25V 150nC @ 10V 600V ISOPLUS247™
IXFR48N60P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 8860pF @ 25V.This device conducts a continuous drain current (ID) of 32A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 85 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 110A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 600 V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFR48N60P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 110A.
a 600V drain to source voltage (Vdss)
IXFR48N60P Applications
There are a lot of IXYS
IXFR48N60P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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