IXFR48N60P

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Mfr.Part #
IXFR48N60P
Manufacturer
Littelfuse
Package / Case
ISOPLUS247™
Datasheet
Download
Description
MOSFET N-CH 600V 32A ISOPLUS247
Stock
208
In Stock :
208

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Number of Terminals :
3
Package / Case :
ISOPLUS247™
Continuous Drain Current Id :
32A
Pbfree Code :
yes
Channel Type :
N Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Product Type :
MOSFET
Mounting Style :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Product Status :
Active
JESD-609 Code :
e1
Supplier Device Package :
ISOPLUS247™
FET Type :
N-Channel
Drain to Source Breakdown Voltage :
600V
Drain-source On Resistance-Max :
0.15Ohm
Polarity/Channel Type :
N-Channel
Mounting Type :
Through Hole
Package :
Tube
DS Breakdown Voltage-Min :
600 V
Operating Temperature :
-55°C~150°C TJ
Fall Time (Typ) :
22 ns
Series :
HiPerFET™, PolarHT™
Length :
16.13 mm
Subcategory :
MOSFETs
Transistor Polarity :
N-Channel
Qualification :
-
Manufacturer :
IXYS
Vgs(th) (Max) @ Id :
5V @ 8mA
Vgs (Max) :
±30V
Current Rating :
48A
Avalanche Energy Rating (Eas) :
2000 mJ
Lead Free :
Lead Free
Product Category :
MOSFET
Power Dissipation (Max) :
300W (Tc)
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Rds On (Max) @ Id, Vgs :
150m Ω @ 24A, 10V
Case Connection :
Isolated
Gate Charge (Qg) (Max) @ Vgs :
150nC @ 10V
ECCN Code :
EAR99
FET Feature :
--
Package Shape :
RECTANGULAR
Voltage - Rated DC :
600V
Tradename :
HiPerFET
Mount :
Through Hole
Maximum Operating Temperature :
+ 150 C
MSL :
MSL 1 - Unlimited
Pin Count :
3
Width :
5.21 mm
Number of Channels :
1 Channel
Continuous Drain Current (ID) :
32A
Current - Continuous Drain (Id) @ 25°C :
32A Tc
Reach Compliance Code :
Compliant
RoHS Status :
ROHS3 Compliant
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Drain to Source Voltage (Vdss) :
600V
Transistor Application :
SWITCHING
Channel Mode :
Enhancement
Terminal Form :
THROUGH-HOLE
Element Configuration :
Single
Transistor Element Material :
SILICON
JESD-30 Code :
R-PSIP-T3
Configuration :
Single
Terminal Position :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation-Max :
300W Tc
Transistor Type :
1 N-Channel
Factory Lead Time :
30 Weeks
Number of Pins :
3
Surface Mount :
No
Published :
2006
Gate to Source Voltage (Vgs) :
30V
Minimum Operating Temperature :
- 55 C
Turn-Off Delay Time :
85 ns
Input Capacitance (Ciss) (Max) @ Vds :
8860pF @ 25V
Operating Mode :
ENHANCEMENT MODE
Qualification Status :
Not Qualified
Base Product Number :
IXFR48
Brand :
IXYS
Power Dissipation :
300W
RoHS :
Details
Rise Time :
25ns
Packaging :
Tube
Pulsed Drain Current-Max (IDM) :
110A
Height :
21.34 mm
Number of Terminations :
3
Datasheets
IXFR48N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFR48N60P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:ISOPLUS247™, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Pins:3, Number of Terminations:3, IXFR48N60P pinout, IXFR48N60P datasheet PDF, IXFR48N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFR48N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFR48N60P


N-Channel Tube 150m Ω @ 24A, 10V ±30V 8860pF @ 25V 150nC @ 10V 600V ISOPLUS247™

IXFR48N60P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 8860pF @ 25V.This device conducts a continuous drain current (ID) of 32A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 85 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 110A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 600 V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFR48N60P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 110A.
a 600V drain to source voltage (Vdss)


IXFR48N60P Applications


There are a lot of IXYS
IXFR48N60P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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