IXFR44N80P

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Mfr.Part #
IXFR44N80P
Manufacturer
Littelfuse
Package / Case
ISOPLUS247™
Datasheet
Download
Description
MOSFET N-CH 800V 25A ISOPLUS247
Stock
718
In Stock :
718

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Mode :
ENHANCEMENT MODE
Case Connection :
Isolated
Transistor Element Material :
SILICON
Avalanche Energy Rating (Eas) :
3400 mJ
Vgs (Max) :
±30V
Published :
2006
Product Status :
Active
Length :
16.13mm
Packaging :
Tube
Terminal Form :
THROUGH-HOLE
Polarity/Channel Type :
N-Channel
Number of Elements :
1
Gate to Source Voltage (Vgs) :
30V
Fall Time (Typ) :
27 ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package :
Tube
Reach Compliance Code :
Compliant
Element Configuration :
Single
Power Dissipation (Max) :
300W (Tc)
Package / Case :
ISOPLUS247™
Drain to Source Voltage (Vdss) :
800V
Operating Temperature :
-55°C~150°C TJ
Package Type :
ISOPLUS247
Channel Type :
N
Supplier Device Package :
ISOPLUS247™
Power Dissipation :
300W
Radiation Hardening :
No
Rise Time :
22ns
Mounting Style :
Through Hole
Continuous Drain Current (ID) :
25A
Current - Continuous Drain (Id) @ 25°C :
25A Tc
Tradename :
HiPerFET
RoHS Status :
ROHS3 Compliant
Number of Pins :
247
FET Feature :
--
Package Shape :
RECTANGULAR
Maximum Operating Temperature :
+150 °C
Manufacturer :
IXYS
Width :
5.21mm
Transistor Polarity :
N-Channel
Pulsed Drain Current-Max (IDM) :
100 A
Subcategory :
MOSFETs
Brand :
IXYS
Turn On Delay Time :
28 ns
DS Breakdown Voltage-Min :
800 V
Mount :
Through Hole
Number of Terminations :
3
Number of Terminals :
3
Factory Lead Time :
30 Weeks
Terminal Position :
Single
Turn-Off Delay Time :
75 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Type :
PolarHV HiPerFET Power MOSFET
Transistor Application :
SWITCHING
Additional Feature :
AVALANCHE RATED
Configuration :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Product Category :
MOSFET
Surface Mount :
No
Drain-source On Resistance-Max :
0.2Ohm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
200m Ω @ 22A, 10V
Power Dissipation-Max :
300W Tc
Input Capacitance (Ciss) (Max) @ Vds :
12000pF @ 25V
Transistor Type :
1 N-Channel
Pbfree Code :
yes
FET Type :
N-Channel
Qualification Status :
Not Qualified
Series :
HiPerFET™, PolarHT™
Pin Count :
3
Vgs(th) (Max) @ Id :
5V @ 8mA
Number of Elements per Chip :
1
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
JESD-30 Code :
R-PSIP-T3
JESD-609 Code :
e1
Mounting Type :
Through Hole
Minimum Operating Temperature :
-55 °C
Lead Free :
Lead Free
Number of Channels :
1 Channel
Channel Mode :
Enhancement
Drain to Source Breakdown Voltage :
800V
RoHS :
Details
Gate Charge (Qg) (Max) @ Vgs :
200nC @ 10V
Height :
21.34mm
Product Type :
MOSFET
Base Product Number :
IXFR44
Datasheets
IXFR44N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFR44N80P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:ISOPLUS247™, Operating Temperature:-55°C~150°C TJ, Number of Pins:247, Number of Terminations:3, Type:PolarHV HiPerFET Power MOSFET, Mounting Type:Through Hole, Number of Channels:1 Channel, IXFR44N80P pinout, IXFR44N80P datasheet PDF, IXFR44N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFR44N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFR44N80P


N-Channel Tube 200m Ω @ 22A, 10V ±30V 12000pF @ 25V 200nC @ 10V 800V ISOPLUS247™

IXFR44N80P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3400 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 12000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 25A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=800V. And this device has 800V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 75 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 100 A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 28 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 800 V in order to maintain normal operation.Operating this transistor requires a 800V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFR44N80P Features


the avalanche energy rating (Eas) is 3400 mJ
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 100 A.
a 800V drain to source voltage (Vdss)


IXFR44N80P Applications


There are a lot of IXYS
IXFR44N80P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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