IXFR44N80P
- Mfr.Part #
- IXFR44N80P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS247™
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 25A ISOPLUS247
- Stock
- 718
- In Stock :
- 718
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- Isolated
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 3400 mJ
- Vgs (Max) :
- ±30V
- Published :
- 2006
- Product Status :
- Active
- Length :
- 16.13mm
- Packaging :
- Tube
- Terminal Form :
- THROUGH-HOLE
- Polarity/Channel Type :
- N-Channel
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 30V
- Fall Time (Typ) :
- 27 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package :
- Tube
- Reach Compliance Code :
- Compliant
- Element Configuration :
- Single
- Power Dissipation (Max) :
- 300W (Tc)
- Package / Case :
- ISOPLUS247™
- Drain to Source Voltage (Vdss) :
- 800V
- Operating Temperature :
- -55°C~150°C TJ
- Package Type :
- ISOPLUS247
- Channel Type :
- N
- Supplier Device Package :
- ISOPLUS247™
- Power Dissipation :
- 300W
- Radiation Hardening :
- No
- Rise Time :
- 22ns
- Mounting Style :
- Through Hole
- Continuous Drain Current (ID) :
- 25A
- Current - Continuous Drain (Id) @ 25°C :
- 25A Tc
- Tradename :
- HiPerFET
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 247
- FET Feature :
- --
- Package Shape :
- RECTANGULAR
- Maximum Operating Temperature :
- +150 °C
- Manufacturer :
- IXYS
- Width :
- 5.21mm
- Transistor Polarity :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 100 A
- Subcategory :
- MOSFETs
- Brand :
- IXYS
- Turn On Delay Time :
- 28 ns
- DS Breakdown Voltage-Min :
- 800 V
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Number of Terminals :
- 3
- Factory Lead Time :
- 30 Weeks
- Terminal Position :
- Single
- Turn-Off Delay Time :
- 75 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Type :
- PolarHV HiPerFET Power MOSFET
- Transistor Application :
- SWITCHING
- Additional Feature :
- AVALANCHE RATED
- Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Product Category :
- MOSFET
- Surface Mount :
- No
- Drain-source On Resistance-Max :
- 0.2Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 22A, 10V
- Power Dissipation-Max :
- 300W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 12000pF @ 25V
- Transistor Type :
- 1 N-Channel
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Series :
- HiPerFET™, PolarHT™
- Pin Count :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Number of Elements per Chip :
- 1
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- JESD-30 Code :
- R-PSIP-T3
- JESD-609 Code :
- e1
- Mounting Type :
- Through Hole
- Minimum Operating Temperature :
- -55 °C
- Lead Free :
- Lead Free
- Number of Channels :
- 1 Channel
- Channel Mode :
- Enhancement
- Drain to Source Breakdown Voltage :
- 800V
- RoHS :
- Details
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- Height :
- 21.34mm
- Product Type :
- MOSFET
- Base Product Number :
- IXFR44
- Datasheets
- IXFR44N80P
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N-Channel Tube 200m Ω @ 22A, 10V ±30V 12000pF @ 25V 200nC @ 10V 800V ISOPLUS247™
IXFR44N80P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3400 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 12000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 25A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=800V. And this device has 800V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 75 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 100 A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 28 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 800 V in order to maintain normal operation.Operating this transistor requires a 800V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFR44N80P Features
the avalanche energy rating (Eas) is 3400 mJ
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 100 A.
a 800V drain to source voltage (Vdss)
IXFR44N80P Applications
There are a lot of IXYS
IXFR44N80P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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