IXFR44N50Q3

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Mfr.Part #
IXFR44N50Q3
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 25A ISOPLUS247
Stock
1,169
In Stock :
1,169

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Style :
Through Hole
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
154m Ω @ 22A, 10V
Operating Mode :
ENHANCEMENT MODE
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~150°C TJ
Transistor Polarity :
N-Channel
Length :
16.13mm
Number of Terminals :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation (Max) :
300W (Tc)
Gate Charge (Qg) (Max) @ Vgs :
93nC @ 10V
Power Dissipation :
300W
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Width :
5.21mm
Continuous Drain Current (ID) :
25A
Brand :
IXYS
Product Category :
MOSFET
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max :
300W Tc
JESD-30 Code :
R-PSIP-T3
Pulsed Drain Current-Max (IDM) :
130A
Avalanche Energy Rating (Eas) :
1500 mJ
Tradename :
HiPerFET
Input Capacitance (Ciss) (Max) @ Vds :
4800pF @ 25V
Lead Free :
Lead Free
Drain to Source Breakdown Voltage :
500V
Package :
Tube
Surface Mount :
No
Package Shape :
RECTANGULAR
Supplier Device Package :
ISOPLUS247™
Polarity/Channel Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Reach Compliance Code :
Unknown
FET Type :
N-Channel
Number of Channels :
1 Channel
DS Breakdown Voltage-Min :
500 V
FET Feature :
--
Channel Mode :
Enhancement
Vgs(th) (Max) @ Id :
6.5V @ 4mA
Transistor Element Material :
SILICON
Drain-source On Resistance-Max :
0.154Ohm
Packaging :
Tube
Rise Time :
250ns
Vgs (Max) :
±30V
Factory Lead Time :
30 Weeks
Height :
21.34mm
Terminal Form :
THROUGH-HOLE
Pin Count :
3
Gate to Source Voltage (Vgs) :
30V
Maximum Operating Temperature :
+ 150 C
Base Product Number :
IXFR44
Mount :
Through Hole
Transistor Type :
1 N-Channel
Package / Case :
TO-247-3
Manufacturer :
IXYS
Number of Terminations :
3
Terminal Position :
Single
Series :
HiPerFET™
Turn-Off Delay Time :
37 ns
Product Status :
Active
Current - Continuous Drain (Id) @ 25°C :
25A Tc
Drain Current-Max (Abs) (ID) :
25 A
Minimum Operating Temperature :
- 55 C
Power Dissipation-Max (Abs) :
300 W
Turn On Delay Time :
30 ns
Product Type :
MOSFET
Mounting Type :
Through Hole
Drain to Source Voltage (Vdss) :
500V
RoHS :
Details
Case Connection :
Isolated
Configuration :
Single
Number of Elements :
1
Number of Pins :
247
Published :
2012
Element Configuration :
Single
Datasheets
IXFR44N50Q3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFR44N50Q3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Package / Case:TO-247-3, Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:247, IXFR44N50Q3 pinout, IXFR44N50Q3 datasheet PDF, IXFR44N50Q3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFR44N50Q3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFR44N50Q3


N-Channel Tube 154m Ω @ 22A, 10V ±30V 4800pF @ 25V 93nC @ 10V 500V TO-247-3

IXFR44N50Q3 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4800pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.There is no drain current on this device since the maximum continuous current it can conduct is 25 A.As a result of its turn-off delay time, which is 37 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 130A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 30 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 500 V, it should remain above the 500 V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFR44N50Q3 Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 37 ns
based on its rated peak drain current 130A.
a 500V drain to source voltage (Vdss)


IXFR44N50Q3 Applications


There are a lot of IXYS
IXFR44N50Q3 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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