IXFR44N50Q

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Mfr.Part #
IXFR44N50Q
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 34A ISOPLUS247
Stock
858
In Stock :
858

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
FET Feature :
--
Transistor Type :
1 N-Channel
Turn-Off Delay Time :
37 ns
Element Configuration :
Single
Continuous Drain Current (ID) :
25A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
SWITCHING
Number of Pins :
247
Drain to Source Voltage (Vdss) :
500V
Rise Time :
250ns
Gate to Source Voltage (Vgs) :
30V
Number of Terminations :
3
Published :
2012
Transistor Element Material :
SILICON
Product Status :
Active
Tradename :
HiPerFET
Avalanche Energy Rating (Eas) :
1500 mJ
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Lead Free :
Lead Free
Manufacturer :
IXYS
Rds On (Max) @ Id, Vgs :
154m Ω @ 22A, 10V
Factory Lead Time :
30 Weeks
Pulsed Drain Current-Max (IDM) :
130A
Channel Mode :
Enhancement
Minimum Operating Temperature :
- 55 C
Reach Compliance Code :
Unknown
Operating Mode :
ENHANCEMENT MODE
RoHS :
Details
Pin Count :
3
Package Shape :
RECTANGULAR
Height :
21.34mm
Terminal Form :
THROUGH-HOLE
Drain to Source Breakdown Voltage :
500V
Configuration :
Single
Base Product Number :
IXFR44
Power Dissipation (Max) :
300W (Tc)
Mounting Type :
Through Hole
Package :
Tube
Mount :
Through Hole
Drain Current-Max (Abs) (ID) :
25 A
Number of Channels :
1 Channel
Power Dissipation :
300W
Case Connection :
Isolated
Vgs (Max) :
±30V
Product Type :
MOSFET
Surface Mount :
No
Maximum Operating Temperature :
+ 150 C
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS Status :
ROHS3 Compliant
FET Type :
N-Channel
Package / Case :
TO-247-3
JESD-30 Code :
R-PSIP-T3
Number of Elements :
1
Polarity/Channel Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
4800pF @ 25V
Supplier Device Package :
ISOPLUS247™
Transistor Polarity :
N-Channel
Number of Terminals :
3
Power Dissipation-Max :
300W Tc
DS Breakdown Voltage-Min :
500 V
Vgs(th) (Max) @ Id :
6.5V @ 4mA
Mounting Style :
Through Hole
Power Dissipation-Max (Abs) :
300 W
Series :
HiPerFET™
Gate Charge (Qg) (Max) @ Vgs :
93nC @ 10V
Drain-source On Resistance-Max :
0.154Ohm
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tube
Brand :
IXYS
Turn On Delay Time :
30 ns
Current - Continuous Drain (Id) @ 25°C :
25A Tc
Length :
16.13mm
Width :
5.21mm
Product Category :
MOSFET
Terminal Position :
Single
Datasheets
IXFR44N50Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFR44N50Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:247, Number of Terminations:3, Mounting Type:Through Hole, Number of Channels:1 Channel, Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, IXFR44N50Q pinout, IXFR44N50Q datasheet PDF, IXFR44N50Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFR44N50Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFR44N50Q


N-Channel Tube 154m Ω @ 22A, 10V ±30V 4800pF @ 25V 93nC @ 10V 500V TO-247-3

IXFR44N50Q3 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4800pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.There is no drain current on this device since the maximum continuous current it can conduct is 25 A.As a result of its turn-off delay time, which is 37 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 130A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 30 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 500 V, it should remain above the 500 V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFR44N50Q3 Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 37 ns
based on its rated peak drain current 130A.
a 500V drain to source voltage (Vdss)


IXFR44N50Q3 Applications


There are a lot of IXYS
IXFR44N50Q3 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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