IXFR44N50Q
- Mfr.Part #
- IXFR44N50Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 34A ISOPLUS247
- Stock
- 858
- In Stock :
- 858
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- FET Feature :
- --
- Transistor Type :
- 1 N-Channel
- Turn-Off Delay Time :
- 37 ns
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 25A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Number of Pins :
- 247
- Drain to Source Voltage (Vdss) :
- 500V
- Rise Time :
- 250ns
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Terminations :
- 3
- Published :
- 2012
- Transistor Element Material :
- SILICON
- Product Status :
- Active
- Tradename :
- HiPerFET
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Lead Free :
- Lead Free
- Manufacturer :
- IXYS
- Rds On (Max) @ Id, Vgs :
- 154m Ω @ 22A, 10V
- Factory Lead Time :
- 30 Weeks
- Pulsed Drain Current-Max (IDM) :
- 130A
- Channel Mode :
- Enhancement
- Minimum Operating Temperature :
- - 55 C
- Reach Compliance Code :
- Unknown
- Operating Mode :
- ENHANCEMENT MODE
- RoHS :
- Details
- Pin Count :
- 3
- Package Shape :
- RECTANGULAR
- Height :
- 21.34mm
- Terminal Form :
- THROUGH-HOLE
- Drain to Source Breakdown Voltage :
- 500V
- Configuration :
- Single
- Base Product Number :
- IXFR44
- Power Dissipation (Max) :
- 300W (Tc)
- Mounting Type :
- Through Hole
- Package :
- Tube
- Mount :
- Through Hole
- Drain Current-Max (Abs) (ID) :
- 25 A
- Number of Channels :
- 1 Channel
- Power Dissipation :
- 300W
- Case Connection :
- Isolated
- Vgs (Max) :
- ±30V
- Product Type :
- MOSFET
- Surface Mount :
- No
- Maximum Operating Temperature :
- + 150 C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Package / Case :
- TO-247-3
- JESD-30 Code :
- R-PSIP-T3
- Number of Elements :
- 1
- Polarity/Channel Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 4800pF @ 25V
- Supplier Device Package :
- ISOPLUS247™
- Transistor Polarity :
- N-Channel
- Number of Terminals :
- 3
- Power Dissipation-Max :
- 300W Tc
- DS Breakdown Voltage-Min :
- 500 V
- Vgs(th) (Max) @ Id :
- 6.5V @ 4mA
- Mounting Style :
- Through Hole
- Power Dissipation-Max (Abs) :
- 300 W
- Series :
- HiPerFET™
- Gate Charge (Qg) (Max) @ Vgs :
- 93nC @ 10V
- Drain-source On Resistance-Max :
- 0.154Ohm
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Brand :
- IXYS
- Turn On Delay Time :
- 30 ns
- Current - Continuous Drain (Id) @ 25°C :
- 25A Tc
- Length :
- 16.13mm
- Width :
- 5.21mm
- Product Category :
- MOSFET
- Terminal Position :
- Single
- Datasheets
- IXFR44N50Q
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N-Channel Tube 154m Ω @ 22A, 10V ±30V 4800pF @ 25V 93nC @ 10V 500V TO-247-3
IXFR44N50Q3 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4800pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.There is no drain current on this device since the maximum continuous current it can conduct is 25 A.As a result of its turn-off delay time, which is 37 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 130A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 30 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 500 V, it should remain above the 500 V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFR44N50Q3 Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 37 ns
based on its rated peak drain current 130A.
a 500V drain to source voltage (Vdss)
IXFR44N50Q3 Applications
There are a lot of IXYS
IXFR44N50Q3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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