IXFR44N50P
- Mfr.Part #
- IXFR44N50P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS247™
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 24A ISOPLUS247
- Stock
- 19
- In Stock :
- 19
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Style :
- Through Hole
- Case Connection :
- Isolated
- Pbfree Code :
- yes
- Series :
- HiPerFET™, PolarHT™
- Package / Case :
- ISOPLUS247™
- Rise Time :
- 27ns
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- Compliant
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Transistor Type :
- 1 N-Channel
- Brand :
- IXYS
- Number of Elements :
- 1
- Product Status :
- Active
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 1700 mJ
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 24A
- Pin Count :
- 3
- Polarity/Channel Type :
- N-Channel
- Resistance :
- 150mOhm
- Drain to Source Breakdown Voltage :
- 500V
- Pulsed Drain Current-Max (IDM) :
- 132 A
- Number of Terminations :
- 3
- Rds On (Max) @ Id, Vgs :
- 150m Ω @ 22A, 10V
- Voltage - Rated DC :
- 500V
- Packaging :
- Tube
- Power Dissipation :
- 208W
- JESD-609 Code :
- e1
- Configuration :
- Single
- Vgs (Max) :
- ±30V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Minimum Operating Temperature :
- - 55 C
- Supplier Device Package :
- ISOPLUS247™
- Transistor Polarity :
- N-Channel
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Length :
- 16.13 mm
- Product Type :
- MOSFET
- Qualification Status :
- Not Qualified
- Drain to Source Voltage (Vdss) :
- 500V
- Factory Lead Time :
- 30 Weeks
- Terminal Form :
- THROUGH-HOLE
- Package :
- Tube
- Channel Mode :
- Enhancement
- Current Rating :
- 44A
- Maximum Operating Temperature :
- + 150 C
- Transistor Application :
- SWITCHING
- RoHS :
- Details
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Surface Mount :
- No
- Power Dissipation-Max :
- 208W Tc
- Manufacturer :
- IXYS
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminals :
- 3
- DS Breakdown Voltage-Min :
- 500 V
- Power Dissipation (Max) :
- 208W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds :
- 5440pF @ 25V
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 18 ns
- Turn-Off Delay Time :
- 70 ns
- Height :
- 21.34 mm
- Base Product Number :
- IXFR44
- Mounting Type :
- Through Hole
- Drain-source On Resistance-Max :
- 0.15 Ω
- Product Category :
- MOSFET
- Package Shape :
- RECTANGULAR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Tradename :
- HiPerFET
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 98nC @ 10V
- FET Feature :
- --
- Gate to Source Voltage (Vgs) :
- 30V
- Width :
- 5.21 mm
- Mount :
- Through Hole
- Number of Channels :
- 1 Channel
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Terminal Position :
- Single
- Subcategory :
- MOSFETs
- Published :
- 2006
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- JESD-30 Code :
- R-PSIP-T3
- Datasheets
- IXFR44N50P
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N-Channel Tube 150m Ω @ 22A, 10V ±30V 5440pF @ 25V 98nC @ 10V 500V ISOPLUS247™
IXFR44N50P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1700 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5440pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 24A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.It is [70 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 132 A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 500 V to maintain normal operation.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFR44N50P Features
the avalanche energy rating (Eas) is 1700 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 132 A.
a 500V drain to source voltage (Vdss)
IXFR44N50P Applications
There are a lot of IXYS
IXFR44N50P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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