IXFR40N90P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Published :

2011

Power Dissipation (Max) :

300W (Tc)

Drain to Source Voltage (Vdss) :

900V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Application :

SWITCHING

Product Type :

MOSFET

Supplier Device Package :

ISOPLUS247™

Package Shape :

RECTANGULAR

Case Connection :

Isolated

Product Category :

MOSFET

Continuous Drain Current (ID) :

21A

Vgs (Max) :

±30V

Rds On Max :

230 mΩ

Number of Terminations :

3

Base Product Number :

IXFR40

Drain Current-Max (Abs) (ID) :

21 A

Transistor Type :

1 N-Channel

Number of Channels :

1 Channel

Factory Lead Time :

30 Weeks

Brand :

IXYS

Drain-source On Resistance-Max :

0.23Ohm

Turn-Off Delay Time :

77 ns

Drain to Source Resistance :

230 mΩ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

46 ns

Qualification Status :

Not Qualified

Pbfree Code :

yes

Rise Time :

50ns

Packaging :

Tube

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

Number of Elements :

1

DS Breakdown Voltage-Min :

900 V

Package / Case :

ISOPLUS247™

Terminal Position :

Single

Min Operating Temperature :

-55 °C

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Series :

HiPerFET™, PolarP2™

Power Dissipation :

300W

Maximum Operating Temperature :

+ 150 C

Rds On (Max) @ Id, Vgs :

230m Ω @ 20A, 10V

Manufacturer :

IXYS

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

80A

Transistor Polarity :

N-Channel

Drain to Source Breakdown Voltage :

900V

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Operating Mode :

ENHANCEMENT MODE

Minimum Operating Temperature :

- 55 C

Terminal Form :

THROUGH-HOLE

Mount :

Through Hole

Input Capacitance :

14 nF

JESD-30 Code :

R-PSIP-T3

Product Status :

Active

Tradename :

HiPerFET

Power Dissipation-Max (Abs) :

300 W

RoHS :

Details

Number of Terminals :

3

JESD-609 Code :

e1

Element Configuration :

Single

Max Operating Temperature :

150 °C

Input Capacitance (Ciss) (Max) @ Vds :

14000pF @ 25V

Package :

Tube

Configuration :

Single

Mounting Style :

Through Hole

Number of Pins :

247

Avalanche Energy Rating (Eas) :

1500 mJ

Reach Compliance Code :

Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Gate Charge (Qg) (Max) @ Vgs :

230nC @ 10V

Surface Mount :

No

Mounting Type :

Through Hole

FET Feature :

--

Power Dissipation-Max :

300W Tc

Max Power Dissipation :

300 W