IXFR36N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

600V

Continuous Drain Current (ID) :

20A

Element Configuration :

Single

Package :

Tube

Isolation Voltage :

2.5kV

Qualification Status :

Not Qualified

Current Rating :

36A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Channel Type :

N Channel

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.2Ohm

JESD-30 Code :

R-PSIP-T3

Fall Time (Typ) :

22 ns

Pbfree Code :

yes

Threshold Voltage :

5V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Supplier Device Package :

ISOPLUS247™

Package Shape :

RECTANGULAR

Rise Time :

25ns

MSL :

-

Maximum Operating Temperature :

+ 150 C

Series :

HiPerFET™, PolarHT™

Base Product Number :

IXFR36

Number of Terminations :

3

Power Dissipation :

208W

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Compliant

Product Category :

MOSFET

Pin Count :

3

Continuous Drain Current Id :

20A

Package / Case :

ISOPLUS247™

Vgs(th) (Max) @ Id :

5V @ 4mA

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

THROUGH-HOLE

Avalanche Energy Rating (Eas) :

1500 mJ

RoHS Status :

ROHS3 Compliant

Subcategory :

MOSFETs

Channel Mode :

Enhancement

Qualification :

-

Gate Charge (Qg) (Max) @ Vgs :

102nC @ 10V

Brand :

IXYS

Surface Mount :

No

Mounting Style :

Through Hole

Power Dissipation (Max) :

208W (Tc)

Polarity/Channel Type :

N-Channel

Product Status :

Active

Length :

16.13 mm

Transistor Polarity :

N-Channel

Number of Terminals :

3

Number of Elements :

1

Tradename :

HiPerFET

Drain to Source Breakdown Voltage :

600V

ECCN Code :

EAR99

Minimum Operating Temperature :

- 55 C

Product Type :

MOSFET

Power Dissipation-Max :

208W Tc

Lead Free :

Lead Free

Factory Lead Time :

30 Weeks

Voltage - Rated DC :

600V

Terminal Position :

Single

JESD-609 Code :

e1

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Pulsed Drain Current-Max (IDM) :

80A

RoHS :

Details

Width :

5.21 mm

Published :

2006

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

80 ns

Case Connection :

Isolated

Rds On (Max) @ Id, Vgs :

200m Ω @ 18A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Feature :

-

Mounting Type :

Through Hole

Manufacturer :

IXYS

Current - Continuous Drain (Id) @ 25°C :

20A Tc

DS Breakdown Voltage-Min :

600 V

Number of Pins :

3

REACH SVHC :

No SVHC

Mount :

Through Hole

Transistor Type :

1 N-Channel

Number of Channels :

1 Channel

Vgs (Max) :

±30V

Packaging :

Tube

Height :

21.34 mm

Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

5800pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel