IXFR34N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

Isolated

Published :

2001

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Power Dissipation-Max :

416W Tc

Drain to Source Voltage (Vdss) :

800V

Fall Time (Typ) :

40 ns

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Product Type :

MOSFET

Vgs (Max) :

±20V

FET Feature :

--

Configuration :

Single

Manufacturer :

IXYS

Terminal Form :

THROUGH-HOLE

Lead Free :

Lead Free

Number of Elements :

1

Supplier Device Package :

ISOPLUS247™

Current Rating :

28A

Series :

HiPerFET™

Mounting Style :

Through Hole

Qualification Status :

Not Qualified

Element Configuration :

Single

Subcategory :

MOSFETs

RoHS :

Details

Height :

21.34 mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation (Max) :

416W (Tc)

Product Status :

Obsolete

Length :

16.13 mm

Pulsed Drain Current-Max (IDM) :

600A

Reach Compliance Code :

Compliant

Turn-Off Delay Time :

100 ns

DS Breakdown Voltage-Min :

800 V

Operating Mode :

ENHANCEMENT MODE

Rise Time :

45ns

Pin Count :

3

Drain-source On Resistance-Max :

0.24Ohm

Transistor Type :

1 N-Channel

Number of Terminals :

3

Continuous Drain Current (ID) :

28A

Terminal Position :

Single

Package Shape :

RECTANGULAR

Additional Feature :

AVALANCHE RATED

Channel Mode :

Enhancement

RoHS Status :

RoHS Compliant

Packaging :

Tube

Mount :

Through Hole

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

7500pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Package / Case :

ISOPLUS247™

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1 Channel

JESD-609 Code :

e1

Package :

Tube

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

270nC @ 10V

Width :

5.21 mm

Product Category :

MOSFET

JESD-30 Code :

R-PSIP-T3

Power Dissipation :

400W

Tradename :

HyperFET

Base Product Number :

IXFR34

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

800V

Rds On (Max) @ Id, Vgs :

240m Ω @ 17A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

4V @ 8mA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Brand :

IXYS

Avalanche Energy Rating (Eas) :

3000 mJ

Transistor Polarity :

N-Channel

Mounting Type :

Through Hole

Number of Terminations :

3

FET Type :

N-Channel

Voltage - Rated DC :

800V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON