IXFR34N80
- Mfr.Part #
- IXFR34N80
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS247™
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 28A ISOPLUS247
- Stock
- 23,882
- In Stock :
- 23,882
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Type :
- MOSFET
- Element Configuration :
- Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Pins :
- 3
- Additional Feature :
- AVALANCHE RATED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- RoHS Compliant
- Surface Mount :
- No
- Configuration :
- Single
- Number of Channels :
- 1 Channel
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Rise Time :
- 45ns
- Height :
- 21.34 mm
- Drain to Source Voltage (Vdss) :
- 800V
- Reach Compliance Code :
- Compliant
- Current Rating :
- 28A
- Transistor Type :
- 1 N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 28A Tc
- Subcategory :
- MOSFETs
- Qualification Status :
- Not Qualified
- FET Feature :
- --
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 800V
- Power Dissipation (Max) :
- 416W (Tc)
- Continuous Drain Current (ID) :
- 28A
- Power Dissipation :
- 400W
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 40 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 270nC @ 10V
- Pbfree Code :
- yes
- Base Product Number :
- IXFR34
- Tradename :
- HyperFET
- Product Status :
- Obsolete
- Number of Terminations :
- 3
- Polarity/Channel Type :
- N-Channel
- Published :
- 2001
- Product Category :
- MOSFET
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20V
- Drain-source On Resistance-Max :
- 0.24Ohm
- Power Dissipation-Max :
- 416W Tc
- Terminal Form :
- THROUGH-HOLE
- Package / Case :
- ISOPLUS247™
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Package Shape :
- RECTANGULAR
- Channel Mode :
- Enhancement
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Polarity :
- N-Channel
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 800V
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSIP-T3
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Number of Terminals :
- 3
- FET Type :
- N-Channel
- Package :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Maximum Operating Temperature :
- + 150 C
- Turn-Off Delay Time :
- 100 ns
- Case Connection :
- Isolated
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 7500pF @ 25V
- Packaging :
- Tube
- Pin Count :
- 3
- Brand :
- IXYS
- DS Breakdown Voltage-Min :
- 800 V
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Length :
- 16.13 mm
- Minimum Operating Temperature :
- - 55 C
- Pulsed Drain Current-Max (IDM) :
- 600A
- JESD-609 Code :
- e1
- Terminal Position :
- Single
- RoHS :
- Details
- Series :
- HiPerFET™
- Width :
- 5.21 mm
- Supplier Device Package :
- ISOPLUS247™
- Mounting Style :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 240m Ω @ 17A, 10V
- Manufacturer :
- IXYS
- Datasheets
- IXFR34N80
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N-Channel Tube 240m Ω @ 17A, 10V ±20V 7500pF @ 25V 270nC @ 10V 800V ISOPLUS247™
IXFR34N80 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.A device's maximum input capacitance is 7500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 28A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=800V, and this device has a drain-to-source breakdown voltage of 800V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 100 ns.Its maximum pulsed drain current is 600A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 800 V.To operate this transistor, you need to apply a 800V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFR34N80 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 600A.
a 800V drain to source voltage (Vdss)
IXFR34N80 Applications
There are a lot of IXYS
IXFR34N80 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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