IXFR32N80Q3

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Mfr.Part #
IXFR32N80Q3
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 800V 24A ISOPLUS247
Stock
57
In Stock :
57

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package Shape :
RECTANGULAR
Transistor Polarity :
N-Channel
Number of Channels :
1 Channel
Published :
2012
Rise Time :
300ns
Length :
16.13mm
Current - Continuous Drain (Id) @ 25°C :
24A Tc
Case Connection :
Isolated
Pin Count :
3
Drain to Source Voltage (Vdss) :
800V
Vgs(th) (Max) @ Id :
6.5V @ 4mA
Number of Terminations :
3
Height :
21.34mm
Surface Mount :
No
Element Configuration :
Single
Product Category :
MOSFET
Continuous Drain Current (ID) :
24A
Factory Lead Time :
30 Weeks
Product Status :
Active
RoHS :
Details
Drain Current-Max (Abs) (ID) :
24 A
Supplier Device Package :
ISOPLUS247™
Power Dissipation-Max (Abs) :
500 W
Product Type :
MOSFET
Drain to Source Breakdown Voltage :
800V
Pulsed Drain Current-Max (IDM) :
84A
Transistor Application :
SWITCHING
Channel Mode :
Enhancement
Number of Terminals :
3
Terminal Position :
Single
Polarity/Channel Type :
N-Channel
Reach Compliance Code :
Compliant
Gate Charge (Qg) (Max) @ Vgs :
140nC @ 10V
DS Breakdown Voltage-Min :
800 V
Rds On (Max) @ Id, Vgs :
300m Ω @ 16A, 10V
Operating Temperature :
-55°C~150°C TJ
Number of Pins :
247
RoHS Status :
ROHS3 Compliant
JESD-30 Code :
R-PSIP-T3
Turn On Delay Time :
38 ns
Width :
5.21mm
Package / Case :
TO-247-3
Avalanche Energy Rating (Eas) :
3000 mJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation :
500W
Maximum Operating Temperature :
+ 150 C
Power Dissipation-Max :
500W Tc
Manufacturer :
IXYS
Transistor Element Material :
SILICON
Turn-Off Delay Time :
45 ns
FET Type :
N-Channel
Power Dissipation (Max) :
500W (Tc)
Transistor Type :
1 N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Minimum Operating Temperature :
- 55 C
Tradename :
HiPerFET
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Base Product Number :
IXFR32
FET Feature :
--
Configuration :
Single
Gate to Source Voltage (Vgs) :
30V
Mount :
Through Hole
Package :
Tube
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain-source On Resistance-Max :
0.3Ohm
Mounting Style :
Through Hole
Series :
HiPerFET™
Input Capacitance (Ciss) (Max) @ Vds :
6940pF @ 25V
Packaging :
Tube
Brand :
IXYS
Vgs (Max) :
±30V
Operating Mode :
ENHANCEMENT MODE
Mounting Type :
Through Hole
Terminal Form :
THROUGH-HOLE
Datasheets
IXFR32N80Q3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFR32N80Q3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Pins:247, Package / Case:TO-247-3, Mounting Type:Through Hole, IXFR32N80Q3 pinout, IXFR32N80Q3 datasheet PDF, IXFR32N80Q3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFR32N80Q3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFR32N80Q3


N-Channel Tube 300m Ω @ 16A, 10V ±30V 6940pF @ 25V 140nC @ 10V 800V TO-247-3

IXFR32N80Q3 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 3000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 6940pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 24A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 800V, and this device has a drainage-to-source breakdown voltage of 800VV.Drain current refers to the maximum continuous current a device can conduct, and it is 24 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 45 ns.Peak drain current is 84A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 38 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 800 V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFR32N80Q3 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 84A.
a 800V drain to source voltage (Vdss)


IXFR32N80Q3 Applications


There are a lot of IXYS
IXFR32N80Q3 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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