IXFR32N80Q3
- Mfr.Part #
- IXFR32N80Q3
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 24A ISOPLUS247
- Stock
- 57
- In Stock :
- 57
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package Shape :
- RECTANGULAR
- Transistor Polarity :
- N-Channel
- Number of Channels :
- 1 Channel
- Published :
- 2012
- Rise Time :
- 300ns
- Length :
- 16.13mm
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Case Connection :
- Isolated
- Pin Count :
- 3
- Drain to Source Voltage (Vdss) :
- 800V
- Vgs(th) (Max) @ Id :
- 6.5V @ 4mA
- Number of Terminations :
- 3
- Height :
- 21.34mm
- Surface Mount :
- No
- Element Configuration :
- Single
- Product Category :
- MOSFET
- Continuous Drain Current (ID) :
- 24A
- Factory Lead Time :
- 30 Weeks
- Product Status :
- Active
- RoHS :
- Details
- Drain Current-Max (Abs) (ID) :
- 24 A
- Supplier Device Package :
- ISOPLUS247™
- Power Dissipation-Max (Abs) :
- 500 W
- Product Type :
- MOSFET
- Drain to Source Breakdown Voltage :
- 800V
- Pulsed Drain Current-Max (IDM) :
- 84A
- Transistor Application :
- SWITCHING
- Channel Mode :
- Enhancement
- Number of Terminals :
- 3
- Terminal Position :
- Single
- Polarity/Channel Type :
- N-Channel
- Reach Compliance Code :
- Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 140nC @ 10V
- DS Breakdown Voltage-Min :
- 800 V
- Rds On (Max) @ Id, Vgs :
- 300m Ω @ 16A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 247
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-PSIP-T3
- Turn On Delay Time :
- 38 ns
- Width :
- 5.21mm
- Package / Case :
- TO-247-3
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 500W
- Maximum Operating Temperature :
- + 150 C
- Power Dissipation-Max :
- 500W Tc
- Manufacturer :
- IXYS
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 45 ns
- FET Type :
- N-Channel
- Power Dissipation (Max) :
- 500W (Tc)
- Transistor Type :
- 1 N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Minimum Operating Temperature :
- - 55 C
- Tradename :
- HiPerFET
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Base Product Number :
- IXFR32
- FET Feature :
- --
- Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 30V
- Mount :
- Through Hole
- Package :
- Tube
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.3Ohm
- Mounting Style :
- Through Hole
- Series :
- HiPerFET™
- Input Capacitance (Ciss) (Max) @ Vds :
- 6940pF @ 25V
- Packaging :
- Tube
- Brand :
- IXYS
- Vgs (Max) :
- ±30V
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Through Hole
- Terminal Form :
- THROUGH-HOLE
- Datasheets
- IXFR32N80Q3
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N-Channel Tube 300m Ω @ 16A, 10V ±30V 6940pF @ 25V 140nC @ 10V 800V TO-247-3
IXFR32N80Q3 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 3000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 6940pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 24A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 800V, and this device has a drainage-to-source breakdown voltage of 800VV.Drain current refers to the maximum continuous current a device can conduct, and it is 24 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 45 ns.Peak drain current is 84A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 38 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 800 V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFR32N80Q3 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 84A.
a 800V drain to source voltage (Vdss)
IXFR32N80Q3 Applications
There are a lot of IXYS
IXFR32N80Q3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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