IXFR32N80P

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Mfr.Part #
IXFR32N80P
Manufacturer
Littelfuse
Package / Case
ISOPLUS247™
Datasheet
Download
Description
MOSFET N-CH 800V 20A ISOPLUS247
Stock
34,553
In Stock :
34,553

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~150°C TJ
JESD-30 Code :
R-PSFM-T3
Product Status :
Active
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Product Type :
MOSFET
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Maximum Operating Temperature :
+ 150 C
Polarity/Channel Type :
N-Channel
Package :
Tube
Minimum Operating Temperature :
- 55 C
Max Power Dissipation :
300 W
Power Dissipation :
300W
Drive Voltage (Max Rds On,Min Rds On) :
10V
Tradename :
HiPerFET
Transistor Polarity :
N-Channel
Mounting Type :
Through Hole
Pin Count :
3
Input Capacitance (Ciss) (Max) @ Vds :
8800pF @ 25V
Qualification Status :
Not Qualified
Gate Charge (Qg) (Max) @ Vgs :
150nC @ 10V
Power Dissipation (Max) :
300W (Tc)
Factory Lead Time :
30 Weeks
Min Operating Temperature :
-55 °C
Turn-On Delay Time :
30 ns
Turn-Off Delay Time :
85 ns
RoHS Status :
ROHS3 Compliant
Height :
21.34mm
Product Category :
MOSFET
Package / Case :
ISOPLUS247™
Drain-source On Resistance-Max :
0.29Ohm
Transistor Element Material :
SILICON
Number of Channels :
1 Channel
Rds On Max :
290 mΩ
Vgs (Max) :
±30V
Series :
HiPerFET™, PolarHT™
Surface Mount :
No
Mounting Style :
Through Hole
Supplier Device Package :
ISOPLUS247™
Reach Compliance Code :
Compliant
Drain to Source Voltage (Vdss) :
800V
Number of Pins :
247
Number of Elements :
1
Power Dissipation-Max :
300W Tc
Fall Time (Typ) :
24 ns
Mount :
Through Hole
Subcategory :
MOSFETs
Transistor Type :
1 N-Channel
Element Configuration :
Single
Published :
2006
Manufacturer :
IXYS
FET Type :
N-Channel
Packaging :
Tube
Max Operating Temperature :
150 °C
FET Feature :
--
Configuration :
Single
Rds On (Max) @ Id, Vgs :
290m Ω @ 16A, 10V
Gate to Source Voltage (Vgs) :
30V
Input Capacitance :
8.8 nF
Width :
5.21mm
Length :
16.13mm
Channel Mode :
Enhancement
Rise Time :
24ns
Terminal Form :
THROUGH-HOLE
Case Connection :
Isolated
Base Product Number :
IXFR32
Vgs(th) (Max) @ Id :
5V @ 8mA
Continuous Drain Current (ID) :
20A
Package Shape :
RECTANGULAR
JESD-609 Code :
e1
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
20A Tc
Number of Terminations :
3
Drain to Source Resistance :
290 mΩ
Type :
PolarHV HiPerFET Power MOSFET
DS Breakdown Voltage-Min :
800 V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminals :
3
Pbfree Code :
yes
Terminal Position :
Single
Drain to Source Breakdown Voltage :
800V
Additional Feature :
AVALANCHE RATED
Brand :
IXYS
RoHS :
Compliant
Operating Mode :
ENHANCEMENT MODE
Turn On Delay Time :
30 ns
Pulsed Drain Current-Max (IDM) :
70A
Avalanche Energy Rating (Eas) :
1500 mJ
Datasheets
IXFR32N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFR32N80P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:ISOPLUS247™, Number of Channels:1 Channel, Number of Pins:247, Number of Terminations:3, Type:PolarHV HiPerFET Power MOSFET, IXFR32N80P pinout, IXFR32N80P datasheet PDF, IXFR32N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFR32N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFR32N80P


N-Channel Tube 290m Ω @ 16A, 10V ±30V 8800pF @ 25V 150nC @ 10V 800V ISOPLUS247™

IXFR32N80P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 8800pF @ 25V.This device conducts a continuous drain current (ID) of 20A, which is the maximum continuous current transistor can conduct.Using VGS=800V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 800V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 85 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 70A.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 290 mΩ, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 30 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 800 V.This transistor requires a drain-source voltage (Vdss) of 800V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFR32N80P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 70A.
single MOSFETs transistor is 290 mΩ
a 800V drain to source voltage (Vdss)


IXFR32N80P Applications


There are a lot of IXYS
IXFR32N80P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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