IXFR32N80P
- Mfr.Part #
- IXFR32N80P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS247™
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 20A ISOPLUS247
- Stock
- 34,553
- In Stock :
- 34,553
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- R-PSFM-T3
- Product Status :
- Active
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Product Type :
- MOSFET
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Maximum Operating Temperature :
- + 150 C
- Polarity/Channel Type :
- N-Channel
- Package :
- Tube
- Minimum Operating Temperature :
- - 55 C
- Max Power Dissipation :
- 300 W
- Power Dissipation :
- 300W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Tradename :
- HiPerFET
- Transistor Polarity :
- N-Channel
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 8800pF @ 25V
- Qualification Status :
- Not Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Power Dissipation (Max) :
- 300W (Tc)
- Factory Lead Time :
- 30 Weeks
- Min Operating Temperature :
- -55 °C
- Turn-On Delay Time :
- 30 ns
- Turn-Off Delay Time :
- 85 ns
- RoHS Status :
- ROHS3 Compliant
- Height :
- 21.34mm
- Product Category :
- MOSFET
- Package / Case :
- ISOPLUS247™
- Drain-source On Resistance-Max :
- 0.29Ohm
- Transistor Element Material :
- SILICON
- Number of Channels :
- 1 Channel
- Rds On Max :
- 290 mΩ
- Vgs (Max) :
- ±30V
- Series :
- HiPerFET™, PolarHT™
- Surface Mount :
- No
- Mounting Style :
- Through Hole
- Supplier Device Package :
- ISOPLUS247™
- Reach Compliance Code :
- Compliant
- Drain to Source Voltage (Vdss) :
- 800V
- Number of Pins :
- 247
- Number of Elements :
- 1
- Power Dissipation-Max :
- 300W Tc
- Fall Time (Typ) :
- 24 ns
- Mount :
- Through Hole
- Subcategory :
- MOSFETs
- Transistor Type :
- 1 N-Channel
- Element Configuration :
- Single
- Published :
- 2006
- Manufacturer :
- IXYS
- FET Type :
- N-Channel
- Packaging :
- Tube
- Max Operating Temperature :
- 150 °C
- FET Feature :
- --
- Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 290m Ω @ 16A, 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Input Capacitance :
- 8.8 nF
- Width :
- 5.21mm
- Length :
- 16.13mm
- Channel Mode :
- Enhancement
- Rise Time :
- 24ns
- Terminal Form :
- THROUGH-HOLE
- Case Connection :
- Isolated
- Base Product Number :
- IXFR32
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Continuous Drain Current (ID) :
- 20A
- Package Shape :
- RECTANGULAR
- JESD-609 Code :
- e1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Number of Terminations :
- 3
- Drain to Source Resistance :
- 290 mΩ
- Type :
- PolarHV HiPerFET Power MOSFET
- DS Breakdown Voltage-Min :
- 800 V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminals :
- 3
- Pbfree Code :
- yes
- Terminal Position :
- Single
- Drain to Source Breakdown Voltage :
- 800V
- Additional Feature :
- AVALANCHE RATED
- Brand :
- IXYS
- RoHS :
- Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 30 ns
- Pulsed Drain Current-Max (IDM) :
- 70A
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Datasheets
- IXFR32N80P
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N-Channel Tube 290m Ω @ 16A, 10V ±30V 8800pF @ 25V 150nC @ 10V 800V ISOPLUS247™
IXFR32N80P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 8800pF @ 25V.This device conducts a continuous drain current (ID) of 20A, which is the maximum continuous current transistor can conduct.Using VGS=800V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 800V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 85 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 70A.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 290 mΩ, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 30 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 800 V.This transistor requires a drain-source voltage (Vdss) of 800V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFR32N80P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 70A.
single MOSFETs transistor is 290 mΩ
a 800V drain to source voltage (Vdss)
IXFR32N80P Applications
There are a lot of IXYS
IXFR32N80P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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