IXFR32N100Q3
- Mfr.Part #
- IXFR32N100Q3
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 23A ISOPLUS247
- Stock
- 30
- In Stock :
- 30
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Turn On Delay Time :
- 45 ns
- Manufacturer :
- IXYS
- Gate to Source Voltage (Vgs) :
- 30V
- Product Status :
- Active
- Base Product Number :
- IXFR32
- Number of Terminations :
- 3
- Vgs (Max) :
- ±30V
- Tradename :
- HiPerFET
- Rise Time :
- 300ns
- Surface Mount :
- No
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Turn-Off Delay Time :
- 54 ns
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Maximum Operating Temperature :
- + 150 C
- Pin Count :
- 3
- Series :
- HiPerFET™
- DS Breakdown Voltage-Min :
- 1000 V
- Factory Lead Time :
- 30 Weeks
- Number of Terminals :
- 3
- Package :
- Tube
- Channel Mode :
- Enhancement
- Number of Channels :
- 1 Channel
- Terminal Position :
- Single
- Transistor Type :
- 1 N-Channel
- RoHS :
- Details
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Input Capacitance (Ciss) (Max) @ Vds :
- 9940pF @ 25V
- Package / Case :
- TO-247-3
- Power Dissipation :
- 570W
- Gate Charge (Qg) (Max) @ Vgs :
- 195nC @ 10V
- Polarity/Channel Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 6.5V @ 8mA
- Power Dissipation-Max :
- 570W Tc
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 350m Ω @ 16A, 10V
- JESD-30 Code :
- R-PSIP-T3
- Product Type :
- MOSFET
- Brand :
- IXYS
- Terminal Form :
- THROUGH-HOLE
- FET Feature :
- -
- Drain to Source Voltage (Vdss) :
- 1000V
- Published :
- 2012
- Length :
- 16.13mm
- Mounting Style :
- Through Hole
- Drain-source On Resistance-Max :
- 0.35Ohm
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Category :
- MOSFET
- Transistor Element Material :
- SILICON
- Power Dissipation (Max) :
- 570W (Tc)
- Pulsed Drain Current-Max (IDM) :
- 96A
- Current - Continuous Drain (Id) @ 25°C :
- 23A Tc
- Transistor Polarity :
- N-Channel
- Power Dissipation-Max (Abs) :
- 570 W
- Number of Pins :
- 247
- Drain Current-Max (Abs) (ID) :
- 23 A
- Width :
- 5.21mm
- Configuration :
- Single
- Height :
- 21.34mm
- Continuous Drain Current (ID) :
- 23A
- Case Connection :
- Isolated
- Package Shape :
- RECTANGULAR
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 1kV
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- Compliant
- Minimum Operating Temperature :
- - 55 C
- Supplier Device Package :
- ISOPLUS247™
- Packaging :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- IXFR32N100Q3
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N-Channel Tube 350m Ω @ 16A, 10V ±30V 9940pF @ 25V 195nC @ 10V 1000V TO-247-3
IXFR32N100Q3 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 3000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 9940pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 23A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1kV, and this device has a drainage-to-source breakdown voltage of 1kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 23 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 54 ns.Peak drain current is 96A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 45 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 1000 V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFR32N100Q3 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 54 ns
based on its rated peak drain current 96A.
a 1000V drain to source voltage (Vdss)
IXFR32N100Q3 Applications
There are a lot of IXYS
IXFR32N100Q3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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