IXFR32N100Q3

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Mfr.Part #
IXFR32N100Q3
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 1000V 23A ISOPLUS247
Stock
30
In Stock :
30

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Element Configuration :
Single
Turn On Delay Time :
45 ns
Manufacturer :
IXYS
Gate to Source Voltage (Vgs) :
30V
Product Status :
Active
Base Product Number :
IXFR32
Number of Terminations :
3
Vgs (Max) :
±30V
Tradename :
HiPerFET
Rise Time :
300ns
Surface Mount :
No
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Turn-Off Delay Time :
54 ns
Avalanche Energy Rating (Eas) :
3000 mJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Maximum Operating Temperature :
+ 150 C
Pin Count :
3
Series :
HiPerFET™
DS Breakdown Voltage-Min :
1000 V
Factory Lead Time :
30 Weeks
Number of Terminals :
3
Package :
Tube
Channel Mode :
Enhancement
Number of Channels :
1 Channel
Terminal Position :
Single
Transistor Type :
1 N-Channel
RoHS :
Details
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Input Capacitance (Ciss) (Max) @ Vds :
9940pF @ 25V
Package / Case :
TO-247-3
Power Dissipation :
570W
Gate Charge (Qg) (Max) @ Vgs :
195nC @ 10V
Polarity/Channel Type :
N-Channel
Vgs(th) (Max) @ Id :
6.5V @ 8mA
Power Dissipation-Max :
570W Tc
Mount :
Through Hole
Rds On (Max) @ Id, Vgs :
350m Ω @ 16A, 10V
JESD-30 Code :
R-PSIP-T3
Product Type :
MOSFET
Brand :
IXYS
Terminal Form :
THROUGH-HOLE
FET Feature :
-
Drain to Source Voltage (Vdss) :
1000V
Published :
2012
Length :
16.13mm
Mounting Style :
Through Hole
Drain-source On Resistance-Max :
0.35Ohm
Number of Elements :
1
Transistor Application :
SWITCHING
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Category :
MOSFET
Transistor Element Material :
SILICON
Power Dissipation (Max) :
570W (Tc)
Pulsed Drain Current-Max (IDM) :
96A
Current - Continuous Drain (Id) @ 25°C :
23A Tc
Transistor Polarity :
N-Channel
Power Dissipation-Max (Abs) :
570 W
Number of Pins :
247
Drain Current-Max (Abs) (ID) :
23 A
Width :
5.21mm
Configuration :
Single
Height :
21.34mm
Continuous Drain Current (ID) :
23A
Case Connection :
Isolated
Package Shape :
RECTANGULAR
Operating Mode :
ENHANCEMENT MODE
Drain to Source Breakdown Voltage :
1kV
Mounting Type :
Through Hole
RoHS Status :
ROHS3 Compliant
Reach Compliance Code :
Compliant
Minimum Operating Temperature :
- 55 C
Supplier Device Package :
ISOPLUS247™
Packaging :
Tube
Operating Temperature :
-55°C~150°C TJ
Datasheets
IXFR32N100Q3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFR32N100Q3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Channels:1 Channel, Package / Case:TO-247-3, Number of Pins:247, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, IXFR32N100Q3 pinout, IXFR32N100Q3 datasheet PDF, IXFR32N100Q3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFR32N100Q3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFR32N100Q3


N-Channel Tube 350m Ω @ 16A, 10V ±30V 9940pF @ 25V 195nC @ 10V 1000V TO-247-3

IXFR32N100Q3 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 3000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 9940pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 23A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1kV, and this device has a drainage-to-source breakdown voltage of 1kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 23 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 54 ns.Peak drain current is 96A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 45 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 1000 V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFR32N100Q3 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 54 ns
based on its rated peak drain current 96A.
a 1000V drain to source voltage (Vdss)


IXFR32N100Q3 Applications


There are a lot of IXYS
IXFR32N100Q3 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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