IXFR32N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

ISOPLUS247™

Gate Charge (Qg) (Max) @ Vgs :

225nC @ 10V

Drain to Source Voltage (Vdss) :

1000V

Maximum Operating Temperature :

+ 150 C

Product Status :

Active

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max (Abs) :

320 W

Base Product Number :

IXFR32

Mount :

Through Hole

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Power Dissipation-Max :

320W Tc

Rds On (Max) @ Id, Vgs :

340m Ω @ 16A, 10V

Fall Time (Typ) :

43 ns

DS Breakdown Voltage-Min :

1000 V

Channel Mode :

Enhancement

Continuous Drain Current (ID) :

18A

Rise Time :

55ns

Reach Compliance Code :

Compliant

Element Configuration :

Single

Width :

5.21 mm

JESD-609 Code :

e1

FET Type :

N-Channel

Product Category :

MOSFET

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSIP-T3

Transistor Application :

SWITCHING

Power Dissipation (Max) :

320W (Tc)

Surface Mount :

No

Drain to Source Breakdown Voltage :

1kV

Packaging :

Tube

Package :

Tube

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Drain-source On Resistance-Max :

0.34 Ω

Number of Terminals :

3

Tradename :

HiPerFET

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

Mounting Style :

Through Hole

Factory Lead Time :

30 Weeks

Published :

2008

Transistor Type :

1 N-Channel

Power Dissipation :

320W

Brand :

IXYS

Mounting Type :

Through Hole

Polarity/Channel Type :

N-Channel

Manufacturer :

IXYS

Configuration :

Single

Transistor Polarity :

N-Channel

Supplier Device Package :

ISOPLUS247™

Vgs (Max) :

±30V

Terminal Position :

Single

Terminal Form :

THROUGH-HOLE

Turn-Off Delay Time :

76 ns

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Height :

21.34 mm

Minimum Operating Temperature :

- 55 C

Number of Pins :

3

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

FET Feature :

--

Additional Feature :

UL RECOGNIZED, AVALANCHE RATED

Series :

HiPerFET™, PolarP2™

Package Shape :

RECTANGULAR

RoHS :

Details

Length :

16.13 mm

Pulsed Drain Current-Max (IDM) :

75A

Gate to Source Voltage (Vgs) :

30V

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

18 A

Number of Channels :

1 Channel

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

1500 mJ

Product Type :

MOSFET

Case Connection :

Isolated

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

14200pF @ 25V