IXFR30N60P
- Mfr.Part #
- IXFR30N60P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS247™
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 15A ISOPLUS247
- Stock
- 41,797
- In Stock :
- 41,797
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Subcategory :
- MOSFETs
- RoHS :
- Details
- JESD-609 Code :
- e1
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 75 ns
- Qualification Status :
- Not Qualified
- Rds On (Max) @ Id, Vgs :
- 250m Ω @ 15A, 10V
- Power Dissipation :
- 166W
- Factory Lead Time :
- 30 Weeks
- Published :
- 2006
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Maximum Operating Temperature :
- + 150 C
- Case Connection :
- Isolated
- Mounting Style :
- Through Hole
- FET Feature :
- --
- Gate to Source Voltage (Vgs) :
- 30V
- Package / Case :
- ISOPLUS247™
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 166W Tc
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- Product Status :
- Active
- Current Rating :
- 30A
- Packaging :
- Tube
- Width :
- 5.21 mm
- Reach Compliance Code :
- Compliant
- Voltage - Rated DC :
- 600V
- Product Type :
- MOSFET
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Vgs (Max) :
- ±30V
- Channel Mode :
- Enhancement
- Number of Terminals :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rise Time :
- 20ns
- Length :
- 16.13 mm
- Tradename :
- HiPerFET
- Package :
- Tube
- Height :
- 21.34 mm
- Power Dissipation (Max) :
- 166W (Tc)
- Configuration :
- Single
- Transistor Type :
- 1 N-Channel
- Pin Count :
- 3
- Base Product Number :
- IXFR30
- Series :
- HiPerFET™, PolarHT™
- Terminal Form :
- THROUGH-HOLE
- Package Shape :
- RECTANGULAR
- Mount :
- Through Hole
- Manufacturer :
- IXYS
- Supplier Device Package :
- ISOPLUS247™
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 600V
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 3820pF @ 25V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 85nC @ 10V
- Transistor Application :
- SWITCHING
- Number of Channels :
- 1 Channel
- Transistor Polarity :
- N-Channel
- Terminal Position :
- Single
- JESD-30 Code :
- R-PSIP-T3
- Pulsed Drain Current-Max (IDM) :
- 80A
- Polarity/Channel Type :
- N-Channel
- Brand :
- IXYS
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Drain to Source Voltage (Vdss) :
- 600V
- Fall Time (Typ) :
- 25 ns
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Minimum Operating Temperature :
- - 55 C
- Continuous Drain Current (ID) :
- 15A
- Element Configuration :
- Single
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Drain-source On Resistance-Max :
- 0.25Ohm
- DS Breakdown Voltage-Min :
- 600 V
- Product Category :
- MOSFET
- Surface Mount :
- No
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Datasheets
- IXFR30N60P
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N-Channel Tube 250m Ω @ 15A, 10V ±30V 3820pF @ 25V 85nC @ 10V 600V ISOPLUS247™
IXFR30N60P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3820pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 75 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 80A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 600 V, it should remain above the 600 V level.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFR30N60P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)
IXFR30N60P Applications
There are a lot of IXYS
IXFR30N60P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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