IXFR30N60P

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Mfr.Part #
IXFR30N60P
Manufacturer
Littelfuse
Package / Case
ISOPLUS247™
Datasheet
Download
Description
MOSFET N-CH 600V 15A ISOPLUS247
Stock
41,797
In Stock :
41,797

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Subcategory :
MOSFETs
RoHS :
Details
JESD-609 Code :
e1
Lead Free :
Lead Free
Turn-Off Delay Time :
75 ns
Qualification Status :
Not Qualified
Rds On (Max) @ Id, Vgs :
250m Ω @ 15A, 10V
Power Dissipation :
166W
Factory Lead Time :
30 Weeks
Published :
2006
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Maximum Operating Temperature :
+ 150 C
Case Connection :
Isolated
Mounting Style :
Through Hole
FET Feature :
--
Gate to Source Voltage (Vgs) :
30V
Package / Case :
ISOPLUS247™
Current - Continuous Drain (Id) @ 25°C :
15A Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
166W Tc
RoHS Status :
ROHS3 Compliant
Operating Mode :
ENHANCEMENT MODE
Number of Pins :
3
Product Status :
Active
Current Rating :
30A
Packaging :
Tube
Width :
5.21 mm
Reach Compliance Code :
Compliant
Voltage - Rated DC :
600V
Product Type :
MOSFET
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs(th) (Max) @ Id :
5V @ 4mA
Vgs (Max) :
±30V
Channel Mode :
Enhancement
Number of Terminals :
3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Rise Time :
20ns
Length :
16.13 mm
Tradename :
HiPerFET
Package :
Tube
Height :
21.34 mm
Power Dissipation (Max) :
166W (Tc)
Configuration :
Single
Transistor Type :
1 N-Channel
Pin Count :
3
Base Product Number :
IXFR30
Series :
HiPerFET™, PolarHT™
Terminal Form :
THROUGH-HOLE
Package Shape :
RECTANGULAR
Mount :
Through Hole
Manufacturer :
IXYS
Supplier Device Package :
ISOPLUS247™
Mounting Type :
Through Hole
Drain to Source Breakdown Voltage :
600V
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
3820pF @ 25V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
85nC @ 10V
Transistor Application :
SWITCHING
Number of Channels :
1 Channel
Transistor Polarity :
N-Channel
Terminal Position :
Single
JESD-30 Code :
R-PSIP-T3
Pulsed Drain Current-Max (IDM) :
80A
Polarity/Channel Type :
N-Channel
Brand :
IXYS
Operating Temperature :
-55°C~150°C TJ
Pbfree Code :
yes
Drain to Source Voltage (Vdss) :
600V
Fall Time (Typ) :
25 ns
Number of Terminations :
3
Number of Elements :
1
Minimum Operating Temperature :
- 55 C
Continuous Drain Current (ID) :
15A
Element Configuration :
Single
Avalanche Energy Rating (Eas) :
1500 mJ
Drain-source On Resistance-Max :
0.25Ohm
DS Breakdown Voltage-Min :
600 V
Product Category :
MOSFET
Surface Mount :
No
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Datasheets
IXFR30N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFR30N60P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:ISOPLUS247™, Number of Pins:3, Mounting Type:Through Hole, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, IXFR30N60P pinout, IXFR30N60P datasheet PDF, IXFR30N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFR30N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFR30N60P


N-Channel Tube 250m Ω @ 15A, 10V ±30V 3820pF @ 25V 85nC @ 10V 600V ISOPLUS247™

IXFR30N60P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3820pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 75 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 80A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 600 V, it should remain above the 600 V level.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFR30N60P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)


IXFR30N60P Applications


There are a lot of IXYS
IXFR30N60P applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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