IXFR30N50Q

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Mfr.Part #
IXFR30N50Q
Manufacturer
Littelfuse
Package / Case
ISOPLUS247™
Datasheet
Download
Description
MOSFET N-CH 500V 30A ISOPLUS247
Stock
4,570
In Stock :
4,570

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~150°C TJ
Transistor Application :
SWITCHING
JESD-30 Code :
R-PSIP-T3
Number of Elements :
1
Number of Terminations :
3
Mount :
Through Hole
Gate to Source Voltage (Vgs) :
20V
Polarity/Channel Type :
N-Channel
Vgs(th) (Max) @ Id :
4V @ 4mA
Rds On (Max) @ Id, Vgs :
160m Ω @ 15A, 10V
DS Breakdown Voltage-Min :
500 V
Case Connection :
Isolated
Series :
HiPerFET™
Transistor Element Material :
SILICON
Reach Compliance Code :
Compliant
Power Dissipation-Max :
310W Tc
Packaging :
Tube
Element Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Qualification Status :
Not Qualified
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
ISOPLUS247™
Published :
2000
Turn-Off Delay Time :
75 ns
Power Dissipation-Max (Abs) :
310 W
Configuration :
SINGLE WITH BUILT-IN DIODE
Surface Mount :
No
Drain Current-Max (Abs) (ID) :
29A
FET Feature :
-
Input Capacitance (Ciss) (Max) @ Vds :
3950pF @ 25V
Base Product Number :
IXFR30
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Pin Count :
3
JESD-609 Code :
e1
Product Status :
Obsolete
Package :
Tube
Drain to Source Voltage (Vdss) :
500 V
Supplier Device Package :
ISOPLUS247™
Vgs (Max) :
±20V
Drain-source On Resistance-Max :
0.16Ohm
Rise Time :
42ns
Continuous Drain Current (ID) :
30A
FET Type :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package Shape :
RECTANGULAR
Mounting Type :
Through Hole
Operating Mode :
ENHANCEMENT MODE
Number of Pins :
3
Terminal Position :
Single
Drain to Source Breakdown Voltage :
500V
Additional Feature :
AVALANCHE RATED
Terminal Form :
THROUGH-HOLE
Power Dissipation (Max) :
310W (Tc)
Gate Charge (Qg) (Max) @ Vgs :
150nC @ 10V
Manufacturer :
IXYS Corporation
Pbfree Code :
yes
Avalanche Energy Rating (Eas) :
1500 mJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Fall Time (Typ) :
20 ns
Number of Terminals :
3
RoHS Status :
RoHS Compliant
Power Dissipation :
310W
Pulsed Drain Current-Max (IDM) :
120A
Datasheets
IXFR30N50Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFR30N50Q from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:ISOPLUS247™, Mounting Type:Through Hole, Number of Pins:3, IXFR30N50Q pinout, IXFR30N50Q datasheet PDF, IXFR30N50Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFR30N50Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFR30N50Q


N-Channel Tube 160m Ω @ 15A, 10V ±20V 3950pF @ 25V 150nC @ 10V 500 V ISOPLUS247™

IXFR30N50Q Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1500 mJ.A device's maximal input capacitance is 3950pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 30A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 29A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 75 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 120A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500 V.This transistor requires a 500 V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFR30N50Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 120A.
a 500 V drain to source voltage (Vdss)


IXFR30N50Q Applications


There are a lot of IXYS
IXFR30N50Q applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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