IXFR30N50Q
- Mfr.Part #
- IXFR30N50Q
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS247™
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 30A ISOPLUS247
- Stock
- 4,570
- In Stock :
- 4,570
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSIP-T3
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Polarity/Channel Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Rds On (Max) @ Id, Vgs :
- 160m Ω @ 15A, 10V
- DS Breakdown Voltage-Min :
- 500 V
- Case Connection :
- Isolated
- Series :
- HiPerFET™
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- Compliant
- Power Dissipation-Max :
- 310W Tc
- Packaging :
- Tube
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- ISOPLUS247™
- Published :
- 2000
- Turn-Off Delay Time :
- 75 ns
- Power Dissipation-Max (Abs) :
- 310 W
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Surface Mount :
- No
- Drain Current-Max (Abs) (ID) :
- 29A
- FET Feature :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- 3950pF @ 25V
- Base Product Number :
- IXFR30
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Pin Count :
- 3
- JESD-609 Code :
- e1
- Product Status :
- Obsolete
- Package :
- Tube
- Drain to Source Voltage (Vdss) :
- 500 V
- Supplier Device Package :
- ISOPLUS247™
- Vgs (Max) :
- ±20V
- Drain-source On Resistance-Max :
- 0.16Ohm
- Rise Time :
- 42ns
- Continuous Drain Current (ID) :
- 30A
- FET Type :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package Shape :
- RECTANGULAR
- Mounting Type :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- Terminal Position :
- Single
- Drain to Source Breakdown Voltage :
- 500V
- Additional Feature :
- AVALANCHE RATED
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation (Max) :
- 310W (Tc)
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Manufacturer :
- IXYS Corporation
- Pbfree Code :
- yes
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 20 ns
- Number of Terminals :
- 3
- RoHS Status :
- RoHS Compliant
- Power Dissipation :
- 310W
- Pulsed Drain Current-Max (IDM) :
- 120A
- Datasheets
- IXFR30N50Q
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N-Channel Tube 160m Ω @ 15A, 10V ±20V 3950pF @ 25V 150nC @ 10V 500 V ISOPLUS247™
IXFR30N50Q Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1500 mJ.A device's maximal input capacitance is 3950pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 30A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 29A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 75 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 120A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500 V.This transistor requires a 500 V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFR30N50Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 120A.
a 500 V drain to source voltage (Vdss)
IXFR30N50Q Applications
There are a lot of IXYS
IXFR30N50Q applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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