IXFR26N50

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Mfr.Part #
IXFR26N50
Manufacturer
Littelfuse
Package / Case
ISOPLUS247™
Datasheet
Download
Description
MOSFET N-CH 500V 26A ISOPLUS247
Stock
16,611
In Stock :
16,611

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
HiPerFET™
Gate to Source Voltage (Vgs) :
20V
Reach Compliance Code :
Compliant
Tradename :
HyperFET
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Product Status :
Obsolete
Channel Mode :
Enhancement
Number of Channels :
1 Channel
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Fall Time (Typ) :
30 ns
Drain to Source Voltage (Vdss) :
500V
Gate Charge (Qg) (Max) @ Vgs :
160nC @ 10V
Rds On (Max) @ Id, Vgs :
200m Ω @ 13A, 10V
Mount :
Through Hole
Package Shape :
RECTANGULAR
Transistor Type :
1 N-Channel
Transistor Application :
SWITCHING
Number of Pins :
3
JESD-30 Code :
R-PSIP-T3
Pbfree Code :
yes
RoHS Status :
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C :
26A Tc
Width :
5.21 mm
Brand :
IXYS
FET Type :
N-Channel
Drain to Source Breakdown Voltage :
500V
Case Connection :
Isolated
Element Configuration :
Single
Number of Terminals :
3
Power Dissipation (Max) :
250W (Tc)
FET Feature :
--
Number of Terminations :
3
Published :
2000
Mounting Style :
Through Hole
Pin Count :
3
JESD-609 Code :
e1
Power Dissipation-Max (Abs) :
250 W
Power Dissipation-Max :
250W Tc
Operating Temperature :
-55°C~150°C TJ
Maximum Operating Temperature :
+ 150 C
Transistor Polarity :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Supplier Device Package :
ISOPLUS247™
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Form :
THROUGH-HOLE
Packaging :
Tube
Configuration :
Single
Turn-Off Delay Time :
65 ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Surface Mount :
No
Manufacturer :
IXYS
Drain Current-Max (Abs) (ID) :
24A
Number of Elements :
1
Product Category :
MOSFET
Rise Time :
33ns
Vgs(th) (Max) @ Id :
4V @ 4mA
Height :
21.34 mm
Qualification Status :
Not Qualified
RoHS :
Details
Package :
Tube
DS Breakdown Voltage-Min :
500 V
Package / Case :
ISOPLUS247™
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4200pF @ 25V
Minimum Operating Temperature :
- 55 C
Power Dissipation :
250W
Polarity/Channel Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
104A
Mounting Type :
Through Hole
Additional Feature :
AVALANCHE RATED
Product Type :
MOSFET
Terminal Position :
Single
Length :
16.13 mm
Base Product Number :
IXFR26
Drain-source On Resistance-Max :
0.2Ohm
Continuous Drain Current (ID) :
26A
Datasheets
IXFR26N50
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFR26N50 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:ISOPLUS247™, Mounting Type:Through Hole, IXFR26N50 pinout, IXFR26N50 datasheet PDF, IXFR26N50 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFR26N50 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFR26N50


N-Channel Tube 200m Ω @ 13A, 10V ±20V 4200pF @ 25V 160nC @ 10V 500V ISOPLUS247™

IXFR26N50 Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4200pF @ 25V.This device has a continuous drain current (ID) of [26A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 24A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 65 ns.A maximum pulsed drain current of 104A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFR26N50 Features


a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 104A.
a 500V drain to source voltage (Vdss)


IXFR26N50 Applications


There are a lot of IXYS
IXFR26N50 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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