IXFR26N50
- Mfr.Part #
- IXFR26N50
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS247™
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 26A ISOPLUS247
- Stock
- 16,611
- In Stock :
- 16,611
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- HiPerFET™
- Gate to Source Voltage (Vgs) :
- 20V
- Reach Compliance Code :
- Compliant
- Tradename :
- HyperFET
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Product Status :
- Obsolete
- Channel Mode :
- Enhancement
- Number of Channels :
- 1 Channel
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 30 ns
- Drain to Source Voltage (Vdss) :
- 500V
- Gate Charge (Qg) (Max) @ Vgs :
- 160nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 13A, 10V
- Mount :
- Through Hole
- Package Shape :
- RECTANGULAR
- Transistor Type :
- 1 N-Channel
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- JESD-30 Code :
- R-PSIP-T3
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Width :
- 5.21 mm
- Brand :
- IXYS
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 500V
- Case Connection :
- Isolated
- Element Configuration :
- Single
- Number of Terminals :
- 3
- Power Dissipation (Max) :
- 250W (Tc)
- FET Feature :
- --
- Number of Terminations :
- 3
- Published :
- 2000
- Mounting Style :
- Through Hole
- Pin Count :
- 3
- JESD-609 Code :
- e1
- Power Dissipation-Max (Abs) :
- 250 W
- Power Dissipation-Max :
- 250W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Maximum Operating Temperature :
- + 150 C
- Transistor Polarity :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Supplier Device Package :
- ISOPLUS247™
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Form :
- THROUGH-HOLE
- Packaging :
- Tube
- Configuration :
- Single
- Turn-Off Delay Time :
- 65 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Surface Mount :
- No
- Manufacturer :
- IXYS
- Drain Current-Max (Abs) (ID) :
- 24A
- Number of Elements :
- 1
- Product Category :
- MOSFET
- Rise Time :
- 33ns
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Height :
- 21.34 mm
- Qualification Status :
- Not Qualified
- RoHS :
- Details
- Package :
- Tube
- DS Breakdown Voltage-Min :
- 500 V
- Package / Case :
- ISOPLUS247™
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4200pF @ 25V
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation :
- 250W
- Polarity/Channel Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 104A
- Mounting Type :
- Through Hole
- Additional Feature :
- AVALANCHE RATED
- Product Type :
- MOSFET
- Terminal Position :
- Single
- Length :
- 16.13 mm
- Base Product Number :
- IXFR26
- Drain-source On Resistance-Max :
- 0.2Ohm
- Continuous Drain Current (ID) :
- 26A
- Datasheets
- IXFR26N50
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N-Channel Tube 200m Ω @ 13A, 10V ±20V 4200pF @ 25V 160nC @ 10V 500V ISOPLUS247™
IXFR26N50 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4200pF @ 25V.This device has a continuous drain current (ID) of [26A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 24A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 65 ns.A maximum pulsed drain current of 104A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFR26N50 Features
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 104A.
a 500V drain to source voltage (Vdss)
IXFR26N50 Applications
There are a lot of IXYS
IXFR26N50 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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