IXFR26N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Type :

1 N-Channel

Manufacturer :

IXYS

Input Capacitance (Ciss) (Max) @ Vds :

14000pF @ 25V

JESD-609 Code :

e1

Transistor Application :

SWITCHING

Length :

16.13 mm

Continuous Drain Current (ID) :

15A

JESD-30 Code :

R-PSIP-T3

Rise Time :

55ns

Width :

5.21 mm

Pbfree Code :

yes

Packaging :

Tube

Maximum Operating Temperature :

+ 150 C

Configuration :

Single

Number of Channels :

1 Channel

Product Category :

MOSFET

Package / Case :

ISOPLUS247™

Power Dissipation :

320W

Pulsed Drain Current-Max (IDM) :

60A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

HiPerFET™, PolarP2™

Rds On (Max) @ Id, Vgs :

500m Ω @ 13A, 10V

Mounting Type :

Through Hole

Power Dissipation-Max :

320W Tc

Pin Count :

3

Transistor Polarity :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

--

Lead Free :

Lead Free

Product Status :

Active

Vgs (Max) :

±30V

Drain Current-Max (Abs) (ID) :

15 A

Additional Feature :

UL RECOGNIZED, AVALANCHE RATED

Number of Terminals :

3

Transistor Element Material :

SILICON

Type :

Polar Power MOSFET HiPerFET

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Package :

Tube

Supplier Device Package :

ISOPLUS247™

Qualification Status :

Not Qualified

Case Connection :

Isolated

Drain to Source Breakdown Voltage :

1.2kV

Package Shape :

RECTANGULAR

Tradename :

HiPerFET

RoHS :

Details

Terminal Form :

THROUGH-HOLE

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Height :

21.34 mm

Base Product Number :

IXFR26

Surface Mount :

No

Factory Lead Time :

30 Weeks

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Brand :

IXYS

Number of Elements :

1

DS Breakdown Voltage-Min :

1200 V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Reach Compliance Code :

Compliant

Channel Mode :

Enhancement

Gate Charge (Qg) (Max) @ Vgs :

225nC @ 10V

Published :

2008

Power Dissipation (Max) :

320W (Tc)

Terminal Position :

Single

Product Type :

MOSFET

Number of Terminations :

3

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

1200V

Polarity/Channel Type :

N-Channel

Turn-Off Delay Time :

76 ns

Minimum Operating Temperature :

- 55 C

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Mounting Style :

Through Hole

Fall Time (Typ) :

58 ns

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Power Dissipation-Max (Abs) :

320 W

Drain-source On Resistance-Max :

0.5Ohm

Gate to Source Voltage (Vgs) :

30V

Avalanche Energy Rating (Eas) :

1500 mJ