IXFR26N100P
- Mfr.Part #
- IXFR26N100P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS247™
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 15A ISOPLUS247
- Stock
- 28,856
- In Stock :
- 28,856
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Manufacturer :
- IXYS
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Configuration :
- Single
- Vgs (Max) :
- ±30V
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Package Shape :
- RECTANGULAR
- Length :
- 16.13 mm
- Transistor Polarity :
- N-Channel
- RoHS :
- Details
- Mounting Style :
- Through Hole
- Channel Mode :
- Enhancement
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Brand :
- IXYS
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 50 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Type :
- 1 N-Channel
- JESD-30 Code :
- R-PSIP-T3
- Rise Time :
- 45ns
- Package :
- Tube
- Minimum Operating Temperature :
- - 55 C
- Operating Mode :
- ENHANCEMENT MODE
- Reach Compliance Code :
- Compliant
- Vgs(th) (Max) @ Id :
- 6.5V @ 1mA
- DS Breakdown Voltage-Min :
- 1000 V
- Pin Count :
- 3
- FET Feature :
- --
- Power Dissipation-Max :
- 290W Tc
- Base Product Number :
- IXFR26
- Type :
- Polar Power MOSFET HiPerFET
- Additional Feature :
- UL RECOGNIZED, AVALANCHE RATED
- Published :
- 2008
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 1000V
- Pbfree Code :
- yes
- Height :
- 21.34 mm
- Polarity/Channel Type :
- N-Channel
- Supplier Device Package :
- ISOPLUS247™
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e1
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- Width :
- 5.21 mm
- Case Connection :
- Isolated
- Drain Current-Max (Abs) (ID) :
- 15 A
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 15A
- Turn-Off Delay Time :
- 72 ns
- Maximum Operating Temperature :
- + 150 C
- Number of Terminals :
- 3
- Transistor Element Material :
- SILICON
- Power Dissipation-Max (Abs) :
- 290 W
- Power Dissipation :
- 290W
- Terminal Position :
- Single
- Factory Lead Time :
- 30 Weeks
- Product Status :
- Active
- Surface Mount :
- No
- Element Configuration :
- Single
- Number of Pins :
- 3
- Series :
- HiPerFET™, PolarP2™
- Package / Case :
- ISOPLUS247™
- Gate to Source Voltage (Vgs) :
- 30V
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Drain to Source Breakdown Voltage :
- 1kV
- Pulsed Drain Current-Max (IDM) :
- 65A
- Gate Charge (Qg) (Max) @ Vgs :
- 197nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 11900pF @ 25V
- Packaging :
- Tube
- Product Category :
- MOSFET
- Terminal Form :
- THROUGH-HOLE
- Drain-source On Resistance-Max :
- 0.43 Ω
- Mounting Type :
- Through Hole
- Power Dissipation (Max) :
- 290W (Tc)
- Rds On (Max) @ Id, Vgs :
- 430m Ω @ 13A, 10V
- Tradename :
- HiPerFET
- Product Type :
- MOSFET
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Number of Channels :
- 1 Channel
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Datasheets
- IXFR26N100P
IXFR26N100P Documents
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N-Channel Tube 430m Ω @ 13A, 10V ±30V 11900pF @ 25V 197nC @ 10V 1000V ISOPLUS247™
IXFR26N100P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 11900pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 15A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1kV, and this device has a drainage-to-source breakdown voltage of 1kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 15 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 72 ns.Peak drain current is 65A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 1000 V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFR26N100P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 72 ns
based on its rated peak drain current 65A.
a 1000V drain to source voltage (Vdss)
IXFR26N100P Applications
There are a lot of IXYS
IXFR26N100P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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