IXFR26N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

IXYS

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

Single

Vgs (Max) :

±30V

Number of Elements :

1

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Package Shape :

RECTANGULAR

Length :

16.13 mm

Transistor Polarity :

N-Channel

RoHS :

Details

Mounting Style :

Through Hole

Channel Mode :

Enhancement

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Brand :

IXYS

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

50 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Type :

1 N-Channel

JESD-30 Code :

R-PSIP-T3

Rise Time :

45ns

Package :

Tube

Minimum Operating Temperature :

- 55 C

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Compliant

Vgs(th) (Max) @ Id :

6.5V @ 1mA

DS Breakdown Voltage-Min :

1000 V

Pin Count :

3

FET Feature :

--

Power Dissipation-Max :

290W Tc

Base Product Number :

IXFR26

Type :

Polar Power MOSFET HiPerFET

Additional Feature :

UL RECOGNIZED, AVALANCHE RATED

Published :

2008

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

1000V

Pbfree Code :

yes

Height :

21.34 mm

Polarity/Channel Type :

N-Channel

Supplier Device Package :

ISOPLUS247™

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e1

Qualification Status :

Not Qualified

Number of Terminations :

3

Width :

5.21 mm

Case Connection :

Isolated

Drain Current-Max (Abs) (ID) :

15 A

Mount :

Through Hole

Continuous Drain Current (ID) :

15A

Turn-Off Delay Time :

72 ns

Maximum Operating Temperature :

+ 150 C

Number of Terminals :

3

Transistor Element Material :

SILICON

Power Dissipation-Max (Abs) :

290 W

Power Dissipation :

290W

Terminal Position :

Single

Factory Lead Time :

30 Weeks

Product Status :

Active

Surface Mount :

No

Element Configuration :

Single

Number of Pins :

3

Series :

HiPerFET™, PolarP2™

Package / Case :

ISOPLUS247™

Gate to Source Voltage (Vgs) :

30V

Avalanche Energy Rating (Eas) :

1000 mJ

Drain to Source Breakdown Voltage :

1kV

Pulsed Drain Current-Max (IDM) :

65A

Gate Charge (Qg) (Max) @ Vgs :

197nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

11900pF @ 25V

Packaging :

Tube

Product Category :

MOSFET

Terminal Form :

THROUGH-HOLE

Drain-source On Resistance-Max :

0.43 Ω

Mounting Type :

Through Hole

Power Dissipation (Max) :

290W (Tc)

Rds On (Max) @ Id, Vgs :

430m Ω @ 13A, 10V

Tradename :

HiPerFET

Product Type :

MOSFET

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Number of Channels :

1 Channel

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)