IXFR26N100P

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Mfr.Part #
IXFR26N100P
Manufacturer
Littelfuse
Package / Case
ISOPLUS247™
Datasheet
Download
Description
MOSFET N-CH 1000V 15A ISOPLUS247
Stock
28,856
In Stock :
28,856

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminals :
3
Channel Mode :
Enhancement
Case Connection :
Isolated
Power Dissipation :
290W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
15A Tc
Terminal Position :
Single
Drain to Source Voltage (Vdss) :
1000V
Avalanche Energy Rating (Eas) :
1000 mJ
Tradename :
HiPerFET
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
DS Breakdown Voltage-Min :
1000 V
Product Category :
MOSFET
Type :
Polar Power MOSFET HiPerFET
Product Type :
MOSFET
Pin Count :
3
Length :
16.13 mm
Transistor Element Material :
SILICON
Qualification Status :
Not Qualified
Number of Terminations :
3
Operating Temperature :
-55°C~150°C TJ
Drain-source On Resistance-Max :
0.43 Ω
Package / Case :
ISOPLUS247™
Element Configuration :
Single
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Surface Mount :
No
Power Dissipation (Max) :
290W (Tc)
Package :
Tube
Package Shape :
RECTANGULAR
Operating Mode :
ENHANCEMENT MODE
FET Type :
N-Channel
Number of Channels :
1 Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-30 Code :
R-PSIP-T3
Continuous Drain Current (ID) :
15A
Rds On (Max) @ Id, Vgs :
430m Ω @ 13A, 10V
Product Status :
Active
Drain Current-Max (Abs) (ID) :
15 A
Vgs(th) (Max) @ Id :
6.5V @ 1mA
Minimum Operating Temperature :
- 55 C
Turn-Off Delay Time :
72 ns
JESD-609 Code :
e1
Additional Feature :
UL RECOGNIZED, AVALANCHE RATED
Manufacturer :
IXYS
RoHS :
Details
Mounting Style :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Maximum Operating Temperature :
+ 150 C
Power Dissipation-Max (Abs) :
290 W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
1 N-Channel
Published :
2008
Input Capacitance (Ciss) (Max) @ Vds :
11900pF @ 25V
Reach Compliance Code :
Compliant
Terminal Form :
THROUGH-HOLE
Transistor Polarity :
N-Channel
Pbfree Code :
yes
Brand :
IXYS
Width :
5.21 mm
Vgs (Max) :
±30V
Factory Lead Time :
30 Weeks
Pulsed Drain Current-Max (IDM) :
65A
Number of Elements :
1
Gate to Source Voltage (Vgs) :
30V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Series :
HiPerFET™, PolarP2™
Number of Pins :
3
Polarity/Channel Type :
N-Channel
Mounting Type :
Through Hole
Supplier Device Package :
ISOPLUS247™
Power Dissipation-Max :
290W Tc
Drain to Source Breakdown Voltage :
1kV
Packaging :
Tube
Height :
21.34 mm
Fall Time (Typ) :
50 ns
Mount :
Through Hole
FET Feature :
--
Rise Time :
45ns
Gate Charge (Qg) (Max) @ Vgs :
197nC @ 10V
Base Product Number :
IXFR26
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFR26N100P from Chip IC,where excellence meets affordability. This product stands out with its Type:Polar Power MOSFET HiPerFET, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:ISOPLUS247™, Number of Channels:1 Channel, Number of Pins:3, Mounting Type:Through Hole, IXFR26N100P pinout, IXFR26N100P datasheet PDF, IXFR26N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFR26N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFR26N100P


N-Channel Tube 430m Ω @ 13A, 10V ±30V 11900pF @ 25V 197nC @ 10V 1000V ISOPLUS247™

IXFR26N100P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 11900pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 15A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1kV, and this device has a drainage-to-source breakdown voltage of 1kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 15 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 72 ns.Peak drain current is 65A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 1000 V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFR26N100P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 72 ns
based on its rated peak drain current 65A.
a 1000V drain to source voltage (Vdss)


IXFR26N100P Applications


There are a lot of IXYS
IXFR26N100P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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