IXFR24N90P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

900V

Brand :

IXYS

Drain-source On Resistance-Max :

0.46Ohm

Pin Count :

3

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

48A

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

1000 mJ

Rds On (Max) @ Id, Vgs :

460m Ω @ 12A, 10V

Mount :

Through Hole

Published :

2008

Number of Terminals :

3

FET Feature :

--

Power Dissipation-Max (Abs) :

230 W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Polarity :

N-Channel

Product Type :

MOSFET

Terminal Form :

THROUGH-HOLE

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Mounting Type :

Through Hole

Rise Time :

40 ns

Supplier Device Package :

ISOPLUS247™

Package / Case :

ISOPLUS247™

Continuous Drain Current (ID) :

13A

Factory Lead Time :

30 Weeks

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

RoHS :

Details

Product Category :

MOSFET

Configuration :

SINGLE WITH BUILT-IN DIODE

Base Product Number :

IXFR24

Reach Compliance Code :

Unknown

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Package :

Tube

Maximum Operating Temperature :

+ 150 C

Case Connection :

Isolated

Terminal Position :

Single

DS Breakdown Voltage-Min :

900V

Pbfree Code :

yes

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Manufacturer :

IXYS

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

13 A

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Polarity/Channel Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

7200pF @ 25V

Package Shape :

RECTANGULAR

JESD-30 Code :

R-PSIP-T3

Power Dissipation (Max) :

230W (Tc)

Number of Elements :

1

Minimum Operating Temperature :

- 55 C

Series :

HiPerFET™, PolarP2™

Input Capacitance :

7.2 nF

Mounting Style :

Through Hole

Vgs (Max) :

±30V

Tradename :

HiPerFET

Qualification Status :

Not Qualified

Rds On Max :

460 mΩ

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Type :

Polar Power MOSFET

Surface Mount :

No

Power Dissipation-Max :

230W Tc

Transistor Element Material :

SILICON

Additional Feature :

UL RECOGNIZED, AVALANCHE RATED

JESD-609 Code :

e1

Max Power Dissipation :

230 W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Product Status :

Active

RoHS Status :

ROHS3 Compliant