IXFR24N80P
- Mfr.Part #
- IXFR24N80P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS247™
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 13A ISOPLUS247
- Stock
- 45,204
- In Stock :
- 45,204
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Lead Free :
- Lead Free
- Power Dissipation (Max) :
- 208W (Tc)
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Transistor Element Material :
- SILICON
- Transistor Polarity :
- N-Channel
- Base Product Number :
- IXFR24
- Width :
- 5.21 mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Type :
- PolarHV HiPerFET Power MOSFET
- Reach Compliance Code :
- Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Supplier Device Package :
- ISOPLUS247™
- Pin Count :
- 3
- Tradename :
- HiPerFET
- Drain to Source Voltage (Vdss) :
- 800V
- Manufacturer :
- IXYS
- Rds On (Max) @ Id, Vgs :
- 420m Ω @ 12A, 10V
- Product Category :
- MOSFET
- Rise Time :
- 27ns
- FET Type :
- N-Channel
- Subcategory :
- MOSFETs
- Element Configuration :
- Single
- Package Shape :
- RECTANGULAR
- Case Connection :
- Isolated
- Input Capacitance (Ciss) (Max) @ Vds :
- 7200pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 13A Tc
- JESD-609 Code :
- e1
- Power Dissipation-Max :
- 208W Tc
- Qualification Status :
- Not Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 105nC @ 10V
- Product Type :
- MOSFET
- Package / Case :
- ISOPLUS247™
- Factory Lead Time :
- 30 Weeks
- Fall Time (Typ) :
- 24 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Minimum Operating Temperature :
- - 55 C
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Channel Mode :
- Enhancement
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 16.13 mm
- FET Feature :
- --
- Additional Feature :
- AVALANCHE RATED
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Power Dissipation :
- 208W
- Maximum Operating Temperature :
- + 150 C
- Polarity/Channel Type :
- N-Channel
- Continuous Drain Current (ID) :
- 13A
- Published :
- 2006
- Number of Terminals :
- 3
- Transistor Type :
- 1 N-Channel
- Height :
- 21.34 mm
- Terminal Form :
- THROUGH-HOLE
- Series :
- HiPerFET™, PolarHT™
- JESD-30 Code :
- R-PSIP-T3
- Mounting Style :
- Through Hole
- Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 800V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package :
- Tube
- DS Breakdown Voltage-Min :
- 800 V
- Brand :
- IXYS
- Turn-Off Delay Time :
- 75 ns
- Pbfree Code :
- yes
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- RoHS Status :
- ROHS3 Compliant
- Pulsed Drain Current-Max (IDM) :
- 55A
- RoHS :
- Details
- Product Status :
- Active
- Terminal Position :
- Single
- Vgs (Max) :
- ±30V
- Packaging :
- Tube
- Number of Channels :
- 1 Channel
- Drain-source On Resistance-Max :
- 0.42Ohm
- Surface Mount :
- No
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- IXFR24N80P
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N-Channel Tube 420m Ω @ 12A, 10V ±30V 7200pF @ 25V 105nC @ 10V 800V ISOPLUS247™
IXFR24N80P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 7200pF @ 25V.This device has a continuous drain current (ID) of [13A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=800V, the drain-source breakdown voltage is 800V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 55A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 800 V.In order to operate this transistor, a voltage of 800V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFR24N80P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 55A.
a 800V drain to source voltage (Vdss)
IXFR24N80P Applications
There are a lot of IXYS
IXFR24N80P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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