IXFR24N80P

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Mfr.Part #
IXFR24N80P
Manufacturer
Littelfuse
Package / Case
ISOPLUS247™
Datasheet
Download
Description
MOSFET N-CH 800V 13A ISOPLUS247
Stock
45,204
In Stock :
45,204

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Avalanche Energy Rating (Eas) :
1500 mJ
Lead Free :
Lead Free
Power Dissipation (Max) :
208W (Tc)
Mount :
Through Hole
Transistor Application :
SWITCHING
Number of Pins :
3
Vgs(th) (Max) @ Id :
5V @ 4mA
Transistor Element Material :
SILICON
Transistor Polarity :
N-Channel
Base Product Number :
IXFR24
Width :
5.21 mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Type :
PolarHV HiPerFET Power MOSFET
Reach Compliance Code :
Compliant
Operating Mode :
ENHANCEMENT MODE
Supplier Device Package :
ISOPLUS247™
Pin Count :
3
Tradename :
HiPerFET
Drain to Source Voltage (Vdss) :
800V
Manufacturer :
IXYS
Rds On (Max) @ Id, Vgs :
420m Ω @ 12A, 10V
Product Category :
MOSFET
Rise Time :
27ns
FET Type :
N-Channel
Subcategory :
MOSFETs
Element Configuration :
Single
Package Shape :
RECTANGULAR
Case Connection :
Isolated
Input Capacitance (Ciss) (Max) @ Vds :
7200pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
13A Tc
JESD-609 Code :
e1
Power Dissipation-Max :
208W Tc
Qualification Status :
Not Qualified
Gate Charge (Qg) (Max) @ Vgs :
105nC @ 10V
Product Type :
MOSFET
Package / Case :
ISOPLUS247™
Factory Lead Time :
30 Weeks
Fall Time (Typ) :
24 ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Minimum Operating Temperature :
- 55 C
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Channel Mode :
Enhancement
Operating Temperature :
-55°C~150°C TJ
Length :
16.13 mm
FET Feature :
--
Additional Feature :
AVALANCHE RATED
Mounting Type :
Through Hole
Number of Terminations :
3
Power Dissipation :
208W
Maximum Operating Temperature :
+ 150 C
Polarity/Channel Type :
N-Channel
Continuous Drain Current (ID) :
13A
Published :
2006
Number of Terminals :
3
Transistor Type :
1 N-Channel
Height :
21.34 mm
Terminal Form :
THROUGH-HOLE
Series :
HiPerFET™, PolarHT™
JESD-30 Code :
R-PSIP-T3
Mounting Style :
Through Hole
Configuration :
Single
Drain to Source Breakdown Voltage :
800V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package :
Tube
DS Breakdown Voltage-Min :
800 V
Brand :
IXYS
Turn-Off Delay Time :
75 ns
Pbfree Code :
yes
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
RoHS Status :
ROHS3 Compliant
Pulsed Drain Current-Max (IDM) :
55A
RoHS :
Details
Product Status :
Active
Terminal Position :
Single
Vgs (Max) :
±30V
Packaging :
Tube
Number of Channels :
1 Channel
Drain-source On Resistance-Max :
0.42Ohm
Surface Mount :
No
Number of Elements :
1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Datasheets
IXFR24N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFR24N80P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Type:PolarHV HiPerFET Power MOSFET, Package / Case:ISOPLUS247™, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Number of Channels:1 Channel, IXFR24N80P pinout, IXFR24N80P datasheet PDF, IXFR24N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFR24N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFR24N80P


N-Channel Tube 420m Ω @ 12A, 10V ±30V 7200pF @ 25V 105nC @ 10V 800V ISOPLUS247™

IXFR24N80P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 7200pF @ 25V.This device has a continuous drain current (ID) of [13A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=800V, the drain-source breakdown voltage is 800V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 55A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 800 V.In order to operate this transistor, a voltage of 800V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFR24N80P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 55A.
a 800V drain to source voltage (Vdss)


IXFR24N80P Applications


There are a lot of IXYS
IXFR24N80P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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