IXFR24N50

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Mfr.Part #
IXFR24N50
Manufacturer
Littelfuse
Package / Case
ISOPLUS247™
Datasheet
Download
Description
MOSFET N-CH 500V 24A ISOPLUS247
Stock
9,945
In Stock :
9,945

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mount :
Through Hole
Drain to Source Voltage (Vdss) :
500V
Power Dissipation (Max) :
250W (Tc)
RoHS Status :
ROHS3 Compliant
Surface Mount :
No
Number of Pins :
3
Rds On (Max) @ Id, Vgs :
230m Ω @ 12A, 10V
Number of Terminations :
3
Drain to Source Breakdown Voltage :
500V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Product Status :
Obsolete
Transistor Application :
SWITCHING
Number of Elements :
1
FET Type :
N-Channel
Number of Terminals :
3
Package :
Tube
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JESD-30 Code :
R-PSIP-T3
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate to Source Voltage (Vgs) :
20V
Operating Temperature :
-55°C~150°C TJ
Input Capacitance (Ciss) (Max) @ Vds :
4200pF @ 25V
Case Connection :
Isolated
Series :
HiPerFET™
Vgs (Max) :
±20V
Reach Compliance Code :
Compliant
Operating Mode :
ENHANCEMENT MODE
Element Configuration :
Single
Vgs(th) (Max) @ Id :
4V @ 4mA
Manufacturer :
IXYS Corporation
Base Product Number :
IXFR24
DS Breakdown Voltage-Min :
500 V
Package Shape :
RECTANGULAR
Rise Time :
33ns
Continuous Drain Current (ID) :
24A
Polarity/Channel Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
160nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
24A Tc
Additional Feature :
AVALANCHE RATED
Power Dissipation-Max :
250W Tc
Pin Count :
3
Drain Current-Max (Abs) (ID) :
22A
Drain-source On Resistance-Max :
0.23 Ω
Turn-Off Delay Time :
65 ns
Package / Case :
ISOPLUS247™
Fall Time (Typ) :
30 ns
Terminal Form :
THROUGH-HOLE
Configuration :
SINGLE WITH BUILT-IN DIODE
Power Dissipation :
250W
Terminal Position :
Single
Pbfree Code :
yes
FET Feature :
--
Supplier Device Package :
ISOPLUS247™
Published :
2000
JESD-609 Code :
e1
Mounting Type :
Through Hole
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) :
250 W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pulsed Drain Current-Max (IDM) :
96A
Qualification Status :
Not Qualified
Datasheets
IXFR24N50
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFR24N50 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:ISOPLUS247™, Mounting Type:Through Hole, IXFR24N50 pinout, IXFR24N50 datasheet PDF, IXFR24N50 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFR24N50 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFR24N50


N-Channel Tube 230m Ω @ 12A, 10V ±20V 4200pF @ 25V 160nC @ 10V 500V ISOPLUS247™

IXFR24N50 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4200pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 24A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Drain current refers to the maximum continuous current a device can conduct, and it is 22A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 65 ns.Peak drain current is 96A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 500 V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFR24N50 Features


a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 96A.
a 500V drain to source voltage (Vdss)


IXFR24N50 Applications


There are a lot of IXYS
IXFR24N50 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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