IXFR24N100

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Mfr.Part #
IXFR24N100
Manufacturer
Littelfuse
Package / Case
ISOPLUS247™
Datasheet
Download
Description
MOSFET N-CH 1KV 22A ISOPLUS247
Stock
26,739
In Stock :
26,739

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Configuration :
Single
Continuous Drain Current (ID) :
22A
Turn-Off Delay Time :
75 ns
Packaging :
Tube
Transistor Type :
1 N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package :
Tube
Product Type :
MOSFET
JESD-30 Code :
R-PSIP-T3
Transistor Application :
SWITCHING
Drain to Source Breakdown Voltage :
1kV
Element Configuration :
Single
Current Rating :
22A
Number of Terminations :
3
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max (Abs) :
400 W
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Tradename :
HyperFET
Mounting Style :
Through Hole
Pulsed Drain Current-Max (IDM) :
96A
Package Shape :
RECTANGULAR
Polarity/Channel Type :
N-Channel
Lead Free :
Lead Free
Input Capacitance (Ciss) (Max) @ Vds :
8700pF @ 25V
Drain-source On Resistance-Max :
0.39 Ω
Reach Compliance Code :
Compliant
Terminal Form :
THROUGH-HOLE
Power Dissipation-Max :
416W Tc
Additional Feature :
AVALANCHE RATED
Number of Pins :
3
Rise Time :
35ns
Vgs(th) (Max) @ Id :
5.5V @ 8mA
Power Dissipation :
400W
Number of Channels :
1 Channel
Minimum Operating Temperature :
- 55 C
Fall Time (Typ) :
21 ns
Avalanche Energy Rating (Eas) :
3000 mJ
Surface Mount :
No
RoHS :
Details
Gate to Source Voltage (Vgs) :
20V
Published :
2008
Mounting Type :
Through Hole
Product Category :
MOSFET
DS Breakdown Voltage-Min :
1000 V
Transistor Polarity :
N-Channel
RoHS Status :
RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs :
267nC @ 10V
Rds On (Max) @ Id, Vgs :
390m Ω @ 12A, 10V
Qualification Status :
Not Qualified
Series :
HiPerFET™
Current - Continuous Drain (Id) @ 25°C :
22A Tc
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Height :
21.34 mm
JESD-609 Code :
e1
FET Type :
N-Channel
Number of Terminals :
3
Case Connection :
Isolated
Drive Voltage (Max Rds On,Min Rds On) :
10V
Radiation Hardening :
No
Brand :
IXYS
Package / Case :
ISOPLUS247™
Number of Elements :
1
Base Product Number :
IXFR24
Pin Count :
3
Maximum Operating Temperature :
+ 150 C
Drain Current-Max (Abs) (ID) :
22 A
Vgs (Max) :
±20V
Mount :
Through Hole
Length :
16.13 mm
Transistor Element Material :
SILICON
Channel Mode :
Enhancement
Terminal Position :
Single
Manufacturer :
IXYS
FET Feature :
--
Supplier Device Package :
ISOPLUS247™
Power Dissipation (Max) :
416W (Tc)
Drain to Source Voltage (Vdss) :
1000V
Voltage - Rated DC :
1kV
Pbfree Code :
yes
Width :
5.21 mm
Operating Mode :
ENHANCEMENT MODE
Product Status :
Not For New Designs
Datasheets
IXFR24N100
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFR24N100 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Channels:1 Channel, Mounting Type:Through Hole, Package / Case:ISOPLUS247™, IXFR24N100 pinout, IXFR24N100 datasheet PDF, IXFR24N100 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFR24N100 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFR24N100


N-Channel Tube 390m Ω @ 12A, 10V ±20V 8700pF @ 25V 267nC @ 10V 1000V ISOPLUS247™

IXFR24N100 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.A device's maximum input capacitance is 8700pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 22A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1kV, and this device has a drain-to-source breakdown voltage of 1kV voltage.Its drain current is 22 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 75 ns.Its maximum pulsed drain current is 96A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 1000 V.To operate this transistor, you need to apply a 1000V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFR24N100 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 96A.
a 1000V drain to source voltage (Vdss)


IXFR24N100 Applications


There are a lot of IXYS
IXFR24N100 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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