IXFR24N100
- Mfr.Part #
- IXFR24N100
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS247™
- Datasheet
- Download
- Description
- MOSFET N-CH 1KV 22A ISOPLUS247
- Stock
- 26,739
- In Stock :
- 26,739
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- Single
- Continuous Drain Current (ID) :
- 22A
- Turn-Off Delay Time :
- 75 ns
- Packaging :
- Tube
- Transistor Type :
- 1 N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package :
- Tube
- Product Type :
- MOSFET
- JESD-30 Code :
- R-PSIP-T3
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 1kV
- Element Configuration :
- Single
- Current Rating :
- 22A
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max (Abs) :
- 400 W
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Tradename :
- HyperFET
- Mounting Style :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 96A
- Package Shape :
- RECTANGULAR
- Polarity/Channel Type :
- N-Channel
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 8700pF @ 25V
- Drain-source On Resistance-Max :
- 0.39 Ω
- Reach Compliance Code :
- Compliant
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation-Max :
- 416W Tc
- Additional Feature :
- AVALANCHE RATED
- Number of Pins :
- 3
- Rise Time :
- 35ns
- Vgs(th) (Max) @ Id :
- 5.5V @ 8mA
- Power Dissipation :
- 400W
- Number of Channels :
- 1 Channel
- Minimum Operating Temperature :
- - 55 C
- Fall Time (Typ) :
- 21 ns
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Surface Mount :
- No
- RoHS :
- Details
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2008
- Mounting Type :
- Through Hole
- Product Category :
- MOSFET
- DS Breakdown Voltage-Min :
- 1000 V
- Transistor Polarity :
- N-Channel
- RoHS Status :
- RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 267nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 390m Ω @ 12A, 10V
- Qualification Status :
- Not Qualified
- Series :
- HiPerFET™
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Height :
- 21.34 mm
- JESD-609 Code :
- e1
- FET Type :
- N-Channel
- Number of Terminals :
- 3
- Case Connection :
- Isolated
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Radiation Hardening :
- No
- Brand :
- IXYS
- Package / Case :
- ISOPLUS247™
- Number of Elements :
- 1
- Base Product Number :
- IXFR24
- Pin Count :
- 3
- Maximum Operating Temperature :
- + 150 C
- Drain Current-Max (Abs) (ID) :
- 22 A
- Vgs (Max) :
- ±20V
- Mount :
- Through Hole
- Length :
- 16.13 mm
- Transistor Element Material :
- SILICON
- Channel Mode :
- Enhancement
- Terminal Position :
- Single
- Manufacturer :
- IXYS
- FET Feature :
- --
- Supplier Device Package :
- ISOPLUS247™
- Power Dissipation (Max) :
- 416W (Tc)
- Drain to Source Voltage (Vdss) :
- 1000V
- Voltage - Rated DC :
- 1kV
- Pbfree Code :
- yes
- Width :
- 5.21 mm
- Operating Mode :
- ENHANCEMENT MODE
- Product Status :
- Not For New Designs
- Datasheets
- IXFR24N100
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N-Channel Tube 390m Ω @ 12A, 10V ±20V 8700pF @ 25V 267nC @ 10V 1000V ISOPLUS247™
IXFR24N100 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.A device's maximum input capacitance is 8700pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 22A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1kV, and this device has a drain-to-source breakdown voltage of 1kV voltage.Its drain current is 22 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 75 ns.Its maximum pulsed drain current is 96A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 1000 V.To operate this transistor, you need to apply a 1000V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFR24N100 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 96A.
a 1000V drain to source voltage (Vdss)
IXFR24N100 Applications
There are a lot of IXYS
IXFR24N100 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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